81. |
The semiconductor‐insulator‐semiconductor (indium tin oxide on silicon) solar cell: Characteristics and loss mechanisms |
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Journal of Applied Physics,
Volume 50,
Issue 10,
1979,
Page 6524-6533
J. Shewchun,
D. Burk,
R. Singh,
M. Spitzer,
J. Dubow,
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摘要:
We have reported on the theory of semiconductor‐insulator‐semiconductor (SIS) solar cells and the experimental characteristics of indium tin oxide (ITO) ‐SiOx‐silicon cells in previous publications. There appear to be no reports in the literature on SIS devices of any type with conversion efficiencies greater than about 12%. Theoretically, 20% efficiency should be possible using 0.2 &OHgr; cmp‐type silicon with a 12‐A˚ interfacial layer. This paper seeks to identify the various possible loss mechanisms (and the range of efficiency loss associated with each of them) that seem to be impeding the achievement of the theoretical limit. To determine the losses, the darkI‐Vcharacteristics as a function of temperature and performance parameters such asVoc,Jsc, FF, and &eegr; as a function of the intensity of illumination (up to 6 suns) have been examined. The intensity measurements reveal in a very distinct way the presence of an interfacial layer and serve to confirm the applicability of the theoretical model.
ISSN:0021-8979
DOI:10.1063/1.325749
出版商:AIP
年代:1979
数据来源: AIP
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82. |
The development of a self‐contained instant‐display erasable electrophoretic x‐ray imager |
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Journal of Applied Physics,
Volume 50,
Issue 10,
1979,
Page 6534-6542
R. K. Swank,
A. R. Sears,
K. H. Yang,
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摘要:
We report the construction and operation of a self‐contained electrophoretic x‐ray image cell which, between two transparent‐electrode coated glass plates, has an electrophoretic liquid in direct contact with radioconductive amorphous selenium. The image cell has a built‐in memory which holds the x‐ray image after a transitory x‐ray exposure. The x‐ray image can be developed and erased, without handling the liquid toner or radioconductive material. Potential applications include radiography, mammography, and x‐ray inspection of baggages, mail, industrial products, and machines.
ISSN:0021-8979
DOI:10.1063/1.325711
出版商:AIP
年代:1979
数据来源: AIP
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83. |
Transient field distribution in a multilayer waveguide |
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Journal of Applied Physics,
Volume 50,
Issue 10,
1979,
Page 6543-6545
A. Traganitis,
E. E. Kriezis,
P. I. Hagouel,
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摘要:
In this paper we consider the field distribution in time and at the origin of the propagation direction of a multilayer lossless dielectric‐loaded waveguide. A general expression is given for the distribution due to applied source at the origin. The analytical technique is also presented.
ISSN:0021-8979
DOI:10.1063/1.325712
出版商:AIP
年代:1979
数据来源: AIP
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84. |
LiBixNd1−xP4O12waveguide laser layer epitaxially grown on LiNdP4O12substrate |
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Journal of Applied Physics,
Volume 50,
Issue 10,
1979,
Page 6546-6548
Jun’ichi Nakano,
Ken’ichi Kubodera,
Shintaro Miyazawa,
Susumu Kondo,
Hideo Koizumi,
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摘要:
A LiBixNd1−xP4O12laser waveguide was successfully fabricated on a LiNdP4O12substrate by liquid‐phase epitaxy using LiPO3as flux. cw laser oscillation at 1.05 &mgr;m was obtained with Ar ion laser coaxial pumping at room temperature.
ISSN:0021-8979
DOI:10.1063/1.325713
出版商:AIP
年代:1979
数据来源: AIP
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85. |
Effect of phonon viscosity on dislocation motion in yttrium iron garnet |
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Journal of Applied Physics,
Volume 50,
Issue 10,
1979,
Page 6549-6550
N. Mazumder,
B. Roy,
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摘要:
Using Mason’s derivation of the three‐phonon loss mechanism, the values of the coefficients of phonon viscosity (shear) &eegr; and drag coefficientsBhave been calculated for yttrium iron garnet (YIG). Further, the compressional viscosity (&khgr;) has also been calculated from the Akhieser loss phenomenon. On comparing the two viscosities (both &eegr; and &khgr;), it was found that the shear viscosity plays the prominent role in producing the damping of dislocations in YIG.
ISSN:0021-8979
DOI:10.1063/1.325714
出版商:AIP
年代:1979
数据来源: AIP
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86. |
Comments on ’’The Anderson-Grüneisen parameter for 16 crystals of cubic symmetry’’ |
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Journal of Applied Physics,
Volume 50,
Issue 10,
1979,
Page 6551-6551
R. Ramji Rao,
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摘要:
It is pointed out that the method of calculating the Anderson-Grüneisen parameter from SOEC and TOEC data used by Tripathietal. was proposed by the author several years ago. In fact, the major part of their paper is a mere duplication of the author’s own paper. No new conclusions were reached in their paper.
ISSN:0021-8979
DOI:10.1063/1.325715
出版商:AIP
年代:1979
数据来源: AIP
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87. |
Modeling laser‐induced diffusion of implanted arsenic in silicon |
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Journal of Applied Physics,
Volume 50,
Issue 10,
1979,
Page 6552-6555
Richard B. Fair,
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摘要:
An approximate theory of laser‐induced diffusion in Si is presented. Starting with the concept of molecular motion in liquids, the self‐diffusion coefficient of liquid Si at the melting temperature is calculated. By introducing the temperature dependence of diffusivity in the melt, the maximum diffusivity as a function of the laser‐power density, the pulse duration, and the As implant dose is derived. Approximate expressions for the depth of melting and the time the Si surface remains molten yield an understanding of the implant dose and the laser‐energy dependence of the diffusion depth. Finally, computer simulations of laser‐induced diffusions are used to verify that As evaporation occurs to some extent during laser annealing.
ISSN:0021-8979
DOI:10.1063/1.325716
出版商:AIP
年代:1979
数据来源: AIP
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88. |
Extension of thin‐film calculations for films having unlike surface properties |
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Journal of Applied Physics,
Volume 50,
Issue 10,
1979,
Page 6556-6561
Ijaz‐ur‐Rahman,
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摘要:
The transport coefficients of a thin metal film depend on the properties of the film surfaces and especially on the relative probability of specular and diffuse scattering from each surface. In this paper earlier thin‐film calculations have been extended to the case where the two surfaces have different specularity parameters or differ in the value of the critical angle below and above which the specularity parameter has widely different values.
ISSN:0021-8979
DOI:10.1063/1.325717
出版商:AIP
年代:1979
数据来源: AIP
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89. |
Positive large linear magnetostriction in Fe‐Pd crystalline alloys |
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Journal of Applied Physics,
Volume 50,
Issue 10,
1979,
Page 6562-6563
K. Fukamichi,
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摘要:
Conventional magnetostriction materials have some practical disadvantages. In order to develop a new magnetostriction alloy having no such disadvantages, the Fe‐Pd alloy system has been investigated. The value of longitudinal linear magnetostriction &lgr; depends sensitively on the heat‐treatment conditions. In the cooled state from 900 °C, the concentration dependence of &lgr; at room temperature takes a pronounced maximum at 33% Pd, indicating about 85×10−6at 500 Oe. Cold working such as swaging has been easily performed.
ISSN:0021-8979
DOI:10.1063/1.325718
出版商:AIP
年代:1979
数据来源: AIP
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90. |
Steering of magnetostatic bulk waves in a dielectric layered structure |
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Journal of Applied Physics,
Volume 50,
Issue 10,
1979,
Page 6564-6566
S. N. Bajpai,
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摘要:
A theoretical investigation of magnetic steering of magnetostatic bulk waves in a YIG film has been presented. The dependence of steering angle on various parameters, e.g., wave frequency, biasing field, and the angle between the direction of phase propagation and biasing field, has been numerically investigated. It is seen that the steering angle can be controlled by a suitable choice of parameters.
ISSN:0021-8979
DOI:10.1063/1.325719
出版商:AIP
年代:1979
数据来源: AIP
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