81. |
Thermal diffusivity of uranium monophosphide from 570 to 1660 K |
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Journal of Applied Physics,
Volume 45,
Issue 1,
1974,
Page 494-495
Shoichi Nasu,
Tadashi Takahashi,
Takeo Kikuchi,
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摘要:
The thermal diffusivity of uranium monophosphide was determined between 570 and 1660 K by a laser pulse method. An anomaly around 970 K found by Menshikovaet al.in the heat‐capacity‐vs‐temperature curve was not clearly observed in the thermal‐diffusivity‐vs‐temperature curve.
ISSN:0021-8979
DOI:10.1063/1.1663012
出版商:AIP
年代:1974
数据来源: AIP
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82. |
Comments on barrier changes in stressed metal‐semiconductor contacts |
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Journal of Applied Physics,
Volume 45,
Issue 1,
1974,
Page 496-498
Stephen J. Fonash,
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摘要:
Considerable attention has been given to stress effects in M‐S contacts. This interest arises out of problems of device technology and out of interest in possible sensor development. This work examines the effects of stress analytically. In particular, barrier height changes with stress are studied and a discussion is presented correlating predicted changes with experimental data. Recent interesting conclusions regarding the shift of surface states and the electron affinity of silicon with stress are examined.
ISSN:0021-8979
DOI:10.1063/1.1663013
出版商:AIP
年代:1974
数据来源: AIP
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83. |
Noise spectrum analysis of a Markov process vs random walk computer solutions simulating 1/fnoise spectra |
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Journal of Applied Physics,
Volume 45,
Issue 1,
1974,
Page 499-500
J. F. Bird,
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摘要:
Analytical solution is effected for the noise‐power spectrum of a Markoffian random walk, which generalizes some computer models that have been claimed to give 1/fnoise spectra (as observed in semiconductors and nerves). The analysis demonstrates the erroneous basis of those claims and illustrates the care needed in computer simulation to avoid such error.
ISSN:0021-8979
DOI:10.1063/1.1663014
出版商:AIP
年代:1974
数据来源: AIP
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84. |
Model for the phenomenon of photodoping of some amorphous semiconductors with silver |
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Journal of Applied Physics,
Volume 45,
Issue 1,
1974,
Page 501-501
J. Salik,
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摘要:
A model for the photodoping of some amorphous semiconductors with silver is given. This model attributes the phenomenon to the position of the metal Fermi energy relative to the semiconductor conduction‐ and valence‐band energies.
ISSN:0021-8979
DOI:10.1063/1.1663016
出版商:AIP
年代:1974
数据来源: AIP
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85. |
Erratum: Nonlinear heat flow in anisotropic media with property variations and nonlinear heat generation |
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Journal of Applied Physics,
Volume 45,
Issue 1,
1974,
Page 502-502
A. Campo,
H. S. Wolko,
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ISSN:0021-8979
DOI:10.1063/1.1663017
出版商:AIP
年代:1974
数据来源: AIP
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