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81. |
Improved Technique for Electrical Measurements on Ice and Other Doped Solids |
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Journal of Applied Physics,
Volume 40,
Issue 5,
1969,
Page 2345-2350
Irving G. Young,
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摘要:
It is of great interest to establish the relationship between the conductivity and the concentration of dopants in ice, as in semiconductors in general. In a widely employed technique, the electrodes are placed perpendicular to the direction of sample growth, which is also the direction of the concentration gradient invariably present. This arrangement is called a resistance measurement. In the improved technique, the electrodes are placed parallel to the concentration gradient; this arrangement is called a conductance measurement. The error in estimation of the bulk conductivity resulting from these distinct methods of measurement is computed, using as the reference, the conductivity associated with the average concentration. Three types of dopant concentration gradients are dealt with: the Pfann, the exponential, and the linear. In addition, the cases where the conductivity is proportional to the first power and to the square root of the concentration are considered. It is found that the improved technique always leads to a smaller error than the usual one, other factors being equal. Furthermore, the techniques recommended for improving doping uniformity (stirring of solution during freezing and freezing only a portion of the sample) are shown to have a sound theoretical basis. The partition coefficient of HCl between ice and water has been calculated based on the Pfann equation and measurement of the average concentration of HCl in doped ice and the known initial solution concentrations.kis of the order of 0.01.
ISSN:0021-8979
DOI:10.1063/1.1657986
出版商:AIP
年代:1969
数据来源: AIP
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82. |
Measurements of Ionic Species Present in rf Discharges of Argon and Argon‐Cesium |
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Journal of Applied Physics,
Volume 40,
Issue 5,
1969,
Page 2350-2356
J. L. Gilkinson,
Herman Held,
L. M. Chanin,
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摘要:
Mass spectrometric measurements have been made of the ions present in rf discharges of argon and argon containing small concentrations of cesium. Data were obtained for normalized argon and cesium pressures up to 3 and 4×10−3Torr, respectively. The relative ion singals are functions not only of the argon and cesium concentrations but also of the plasma excitation power. For argon‐cesium mixtures the primary ions that are observed are Ar+, Ar2+, and Cs+. Analysis of the data for Ar+and Ar2+suggests that Ar2+is produced by both Hornbeck‐Molnar and three‐body conversion processes. Interpretation of the results leads to the conclusion that in the present study Cs+is formed by both direct ionization and by collisions of argon metastables with neutral cesium.
ISSN:0021-8979
DOI:10.1063/1.1657987
出版商:AIP
年代:1969
数据来源: AIP
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83. |
Analysis of the Compressibility Data on Lithium Hydride |
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Journal of Applied Physics,
Volume 40,
Issue 5,
1969,
Page 2357-2358
K. G. Subhadra,
D. B. Sirdeshmukh,
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ISSN:0021-8979
DOI:10.1063/1.1657988
出版商:AIP
年代:1969
数据来源: AIP
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84. |
Thermal and Electrical Anisotropy of Polycrystalline Silicon |
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Journal of Applied Physics,
Volume 40,
Issue 5,
1969,
Page 2358-2359
K. E. Bean,
H. P. Hentzschel,
D. Colman,
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ISSN:0021-8979
DOI:10.1063/1.1657989
出版商:AIP
年代:1969
数据来源: AIP
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85. |
Magnon Longitudinal Phonon Interaction in Obliquely Magnetized YIG Rods |
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Journal of Applied Physics,
Volume 40,
Issue 5,
1969,
Page 2359-2361
P. de Santis,
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ISSN:0021-8979
DOI:10.1063/1.1657990
出版商:AIP
年代:1969
数据来源: AIP
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86. |
Photoactivity and Field Induced Changes in Optical Rotation in Bismuth Silicon Oxide (Bi12SiO20) |
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Journal of Applied Physics,
Volume 40,
Issue 5,
1969,
Page 2361-2362
G. F. Moore,
P. V. Lenzo,
E. G. Spencer,
A. A. Ballman,
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ISSN:0021-8979
DOI:10.1063/1.1657991
出版商:AIP
年代:1969
数据来源: AIP
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87. |
Erratum: Chemical Bonding Studies of Silicates and Oxides by X‐Ray K‐Emission Spectroscopy |
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Journal of Applied Physics,
Volume 40,
Issue 5,
1969,
Page 2362-2362
Charles G. Dodd,
G. L. Glen,
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ISSN:0021-8979
DOI:10.1063/1.1657992
出版商:AIP
年代:1969
数据来源: AIP
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88. |
Erratum: Space‐Change Conduction in Insulators |
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Journal of Applied Physics,
Volume 40,
Issue 5,
1969,
Page 2363-2363
A. C. Lilly,
D. A. Lowitz,
John C. Schug,
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ISSN:0021-8979
DOI:10.1063/1.1657993
出版商:AIP
年代:1969
数据来源: AIP
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