摘要:

Molecular beam epitaxy has been used to grow CuInSe2on CdS(0001B). Epitaxial growth, as determined frominsitureflection electron diffraction, was observed at a substrate temperature of 300 °C.

ISSN:0021-8979    

DOI:10.1063/1.325624

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

The thermal carrier generation in a buried channel charge coupled device has been observed experimentally. The generation rate decreases dramatically as the potential well fills, compared to the same characteristic in a surface channel charge coupled device.

ISSN:0021-8979    

DOI:10.1063/1.325650

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

When an insulating layer of TiOxis added beneath the Ni barrier contact of amorphous silicon Schottky diodes, increases are produced in both the open‐circuit voltage and the short‐circuit current. The former change is explained by an increased barrier height and diode factor, and the latter change is at least partially caused by an increase in the width of the space‐charge region.

ISSN:0021-8979    

DOI:10.1063/1.325651

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Indium doping of nominally puren‐type CdS containing excess Cd can raise the free‐carrier concentration by an order of magnitude over the 77–300 °K temperature range even though this increase is only a small fraction of the total concentration of indium impurities included as dopants. At room temperature such doping does not significantly change the mobility from its value in undoped samples. As temperature is lowered toward 77 °K, neutral‐impurity‐like scattering in the indium‐doped samples causes the mobility to become only weakly dependent on temperature. This is in contrast to undopedn‐CdS which is dominated by longitudinal polar optical‐phonon scattering and piezoelectric scattering that allow the mobility to rise an order of magnitude as temperature is lowered from 300 to 77 °K.

ISSN:0021-8979    

DOI:10.1063/1.325652

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Thin‐film junctions of ZnO‐Bi2O3have been made by sputtering. The junction breakdown voltage ranges from 2.3 to 3.0 V when ZnO is positively biased. A negative resistance usually appears after the breakdown. When ZnO is negatively biased, the current is proportional to an exponential function of the applied voltage with a built‐in barrier of roughly 0.8 V. These characteristics and their temperature dependence on being cooled down to 77 °K will be discussed in terms of a qualitativen‐nheterojunction with interface states.

ISSN:0021-8979    

DOI:10.1063/1.325653

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Magnetic analysis of an amorphous alloy magnet with high permeability and with low remanence was made in terms of electron diffraction. This alloy was composed of Co (66), Si (15), B (10), and Fe (9). The surface of the specimen was embedded with alumina particles which were able to give rise to distinct reflections. According to the analysis of the diffraction patterns obtained, the saturation induction of the specimen amounted to about 103G, and its remanence proved to be negligibly small.

ISSN:0021-8979    

DOI:10.1063/1.325654

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

The magnitude of the pyroelectric coefficient in polyvinylidene fluoride was observed to increase significantly on maintaining the poling field while cooling the samples from elevated poling temperatures to ambient temperature. The results of the measurement of the depolarization currents with repeated thermal cycling of poled specimens from temperatures well above that of poling conditions to 30 °C suggest that dipolar reorientations may be responsible for the pyroelectricity in PVF2. These observations hold for both the conventional poling and the corona charging of PVF2films, originally containing form 1 and form 2 crystallites.

ISSN:0021-8979    

DOI:10.1063/1.325612

出版商:AIP    

年代:1979

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.327274

出版商:AIP    

年代:1979

数据来源: AIP