摘要:

Applied electric fields of the order of 100 V/cm influence the growth of whiskers during the reduction of metal halides such as CuBr. The method and the apparatus described provide potential improvements in the reduction growth process, such as improved yields, control of the type of growth, and the tendency of the whiskers to line up with the applied field. In addition, an electric current accompanies the growth process. This current, presently the subject of further studies, is interesting in itself and may provide an independent means to investigate and control the growth process. The apparatus is easily adaptable to direct visual and photographic observation of the growing whiskers.

ISSN:0021-8979    

DOI:10.1063/1.331096

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

The sintering reaction of a thin film of platinum on a silicon substrate followed by a thicker aluminum overlayer has been studied. The metal layers were deposited on ⟨100⟩ orientedp‐ andn‐type silicon. Aluminum is the major contaminant found in sputtered platinum films. Possible deleterious metallurgical reactions between platinum and several possible metal contaminants during subsequent processing were previously discussed. In the present study the metallization system was exposed to harsh thermal and chemical conditions. The results do not indicate the existence of detrimental effects on the ohmic contact properties due to a platinum‐aluminum reaction, following the usual treatment in aqua regia, if a thick enough (∼500 A˚) layer of platinum is used. In fact, the formation of a PtAl2intermetallic compound seems to result in low values for the specific contact resistance.

ISSN:0021-8979    

DOI:10.1063/1.331097

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

The interactions of Al and NiCr electrodes with hydrogenatedn‐type amorphous silicon films have been investigated in a temperature range of 100–350 °C. It was found that pits were produced in thea‐Si films at temperatures above 170 °C in the case of Al electrodes, while they were not observed in the case of NiCr electrodes even if heat‐treated at a temperature of 350 °C. From the Auger electron spectroscopy measurements, it was shown that a marked interdiffusion of Al and Si occurs. The sheet resistance of thea‐Si films began to increase at temperatures above 170 °C. The contact resistivity between thea‐Si films and Al electrodes could not be determined in the case ofa‐Si films with usual low conductivity. For the specimens with high conductivity [&sgr;∼1(&OHgr; cm)−1], the value of about 1×10−3&OHgr; cm2was obtained.

ISSN:0021-8979    

DOI:10.1063/1.331098

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Satisfactory approximate analytical solutions of potential distributions of an undegeneracy semiconductor sample having a surface inversion region and impurity densityN≳102niwere obtained by the following simple modeld2u/dx2=aN:un≳u⩾0,bN: 2un≳n⩾un,reu−un:us⩾u⩾2un, whereun= arc Sinh(N/2) = ln N,usis the surface potential anda,b, andrare adjustable parameters. Particularly, the following formulas can provide quite good values of the parameters:a= 1−(1/un),b= 1+(g/un), andr= 1+(us−2un+1−g)(eus−2un−1)−1, wheregis an adjustable parameter. For example, the error is not greater than about 2% wheng= 1 andN≳103niand it decreases with increasing impurity density. The total amount of the space charges and the amount of carriers in the inversion region (us⩾u⩾un) were accurately given. The model can be applied in a small current injection whose direction is perpendicular to the sample surface if the average quasi‐Fermi energy level of the electrons and holes can be introduced instead of the Fermi energy level at equilibrium.

ISSN:0021-8979    

DOI:10.1063/1.331099

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Discrepancies exist in the literature about the interpretation of acoustic emission (AE) experiments with technical superconductors. At least three different origins of AE in short sample experiments have been identified: (1) shear transformation during mechanical strain, (2) friction by wire motion, and (3) flux motion during current or field sweep. This last origin, however, has been disputed recently. The paper discusses the published results and shows that flux motion is clearly an origin of AE. Further data are also presented to support this conclusion.

ISSN:0021-8979    

DOI:10.1063/1.331100

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

The emission spectra for commercial pulsed GaAs laser diodes are measured as a function of magnetic field up to 26 T at low temperatures. The data fit a theoretical model in which the laser emission recombination involves a hybrid plasmon mode rather than a hydrogenic‐donor level.

ISSN:0021-8979    

DOI:10.1063/1.331101

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

The annealing behavior of arsenic‐implanted silicon using a CO laser is investigated and compared to CO2laser annealing. The irradiation time dependence of the surface carrier concentration and electron mobility on the laser wavelength and substrate doping density is shown to be a direct consequence of free carrier absorption. The two infrared laser annealing methods are found to result in identical electrical characteristics, which are comparable to that obtained by 30‐min furnace anneals at 800 °C.

ISSN:0021-8979    

DOI:10.1063/1.331102

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

An experiment was carried out to isolate the effect responsible forVocenhancement in back‐surface ion‐implanted Si solar cells. It is shown that open circuit voltage enhancement from back‐surface boron implantation is due to the formation of an effective back surface field rather than to lifetime enhancement that results from damage‐induced gettering. Comparison of boron‐implanted cells is made to cells that had no boron implants and to cells with the boron implant removed by etching.

ISSN:0021-8979    

DOI:10.1063/1.331103

出版商:AIP    

年代:1982

数据来源: AIP