摘要:

The spin‐orbit splittings in elemental and compound semiconductors are shown to be linearly related with the atomic ionization potential. The relation is used to judge the acceptability of the different reported values of the splitting for various semiconductors. ©1995 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.359506

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

The degradation mechanism of ZnMgSSe/ZnSSe/ZnCdSe separate confinement heterostructure laser diodes is studied under continuous wave and pulsed operation at room temperature. The degradation of the active quantum well is caused by formation of optically inactive areas which nucleate at paired stacking faults. These ‘‘dark defects’’ are identified as areas of dislocation network and point defect segregation. ©1995 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.359507

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

Theoretical calculations [P. M. Young, C. H. Grein, H. Ehrenreich, and R. H. Miles, J. Appl. Phys.74, 4774 (1993)] comparing optimized InAs/InxGa1−xSb superlattice (SL) to bulk HgxCd1−xTe (MCT) detectors claim that the SL detector is superior to MCT for 11 &mgr;m operation. The referenced analysis is incomplete for three reasons: first, radiative recombination is ignored, resulting in unrealistically high SL performance predictions; second, the Auger‐7 (chlh) mechanism is assumed to limit lifetime inp‐type MCT, while longer radiatively limited lifetime has been observed experimentally; and finally, optimized MCT devices are routinely fabricated in thin epitaxial layers, which give higher performance than is obtained in bulk material. A more complete theory for SL detectors is unlikely to predict higher performance than that of MCT detectors, since MCT detectors are theoretically limited by radiative processes. Measured MCT detector performance in near agreement with the radiative limit has been observed. ©1995 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.359527

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

Our calculations of the relative performance of ideal superlattice and HgCdTe (MCT) photovoltaic long wave infrared detectors, criticized in the previous Comment, do include radiative lifetimes. They also find the Auger‐7 lifetime to be shorter than the radiative lifetime forpdoping levels of 1017cm−3. This agrees with other calculations and with the majority of experiments. The issue of detector thickness raised in the comment is not relevant since neither MCT nor the superlattices has an intrinsic advantage in this respect. The superlattices are further favored relative to MCT by lower tunneling currents, higher uniformity, and materials processing advantages. We suggest the superlattice system to be promising for the eventual realization of high‐performance detectors. ©1995 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.359528

出版商:AIP    

年代:1995

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.359614

出版商:AIP    

年代:1995

数据来源: AIP