摘要:

The matter transport of arsenic ions implanted into titanium silicide layers has been investigated after thermal diffusion treatment in the 800 °C–1100 °C temperature range. The arsenic atoms redistribute between TiSi2and Si with a segregation coefficient depending on temperature. The diffused amount increases linearly with the square root of annealing time at 1100 °C. Then‐doped shallow Si layer has a quite good electrical activity with a mean resistivity of about 1.2 M&OHgr; cm. The leakage current of the reverse‐biasedn+/pjunction is instead quite high. Stacking faults are observed in the diffused layer.

ISSN:0021-8979    

DOI:10.1063/1.344550

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

Elimination of stacking faults in a silicon epitaxial layer of (100) orientation by heat treatment has been investigated by observing repeated etching patterns. Similar to the (111) orientation case, two types of stacking faults are observed: one is eliminated easily by heat treatment and the other is stable and cannot be eliminated. This communication describes the results of experiments and observations on the stacking faults elimination of a (100) face epitaxial layer. From the experimental results, it was found that elimination proceeds locally not only from the surface of the growth layer to the substrate, but also from partial dislocation of the stacking fault under the surface of the growth layer. Elimination at the partial dislocation is explained.

ISSN:0021-8979    

DOI:10.1063/1.344551

出版商:AIP    

年代:1990

数据来源: AIP