摘要:

The dependence of boron neutralization on the hydrogenation temperature was studied systematically in 2‐&OHgr;‐cm, B‐doped crystalline silicon. The maximum penetration depth of H increases with temperature. The migration of H has an activation energy of 0.39 eV. The B neutralization, measured as surface resistivity, reaches a maximum at 100 °C. The surface resistivity reverts to the bulk value above 160 °C. The bond breaking that reactivates the acceptors has an activation energy of 0.76 eV.

ISSN:0021-8979    

DOI:10.1063/1.346831

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

The polarized memory effect, in which the switching between the on and off states depends on the polarity of the bias voltage, was found in the device including the film of the organic charge‐transfer complex, copper‐tetracyanoquinodimethane (Cu‐TCNQ). The device consists of three layers, Al/Cu‐TCNQ/Cu. The dcI‐Vcharacteristics and the dielectric behavior up to 106Hz were studied. The number of the charge carriers which make the dielectric response below 103Hz increases in the on state. The mechanism of the switching is briefly discussed.

ISSN:0021-8979    

DOI:10.1063/1.346832

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

Oxygen diffusion in carbon‐doped silicon which received an extended isochronal anneal in the temperature range between 460 and 850 °C was studied. At temperatures below 690 °C, an enhanced oxygen diffusion was observed. This phenomenon has been previously suggested to be attributed to mobile stable carbon and oxygen complexes. In addition to these mobile species, it is proposed that the carbon and oxygen complexes could also act as an activated state in an enhanced diffusion process.

ISSN:0021-8979    

DOI:10.1063/1.346833

出版商:AIP    

年代:1990

数据来源: AIP