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91. |
Magnetism of perovskite manganese oxide La1/3Nd1/3Ca1/3MnO3 |
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Journal of Applied Physics,
Volume 82,
Issue 9,
1997,
Page 4687-4689
G. H. Rao,
J. R. Sun,
J. K. Liang,
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摘要:
Magnetism of bulk La1/3Nd1/3Ca1/3MnO3with a magnetoresistance ratio as high as −96&percent; in a field of 0.67 T is investigated. Two shoulders are observed on both thermal magnetization curves and magnetization isotherms. A magnetic inhomogeneity model, i.e., simultaneous occurrence of ferromagnetic La-rich domains and nonferromagnetic Nd-rich domains in the compound, is proposed. The model gives a satisfactory explanation for the experimental results. It is argued that a field-induced magnetic transition occurs in the Nd-rich phase and the coexisting La-rich phase can promote the magnetic transition. ©1997 American Institute of Physics.
ISSN:0021-8979
DOI:10.1063/1.366210
出版商:AIP
年代:1997
数据来源: AIP
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92. |
Internal photoluminescence and lifetime of light-emitting diodes on conductive ZnSe substrates |
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Journal of Applied Physics,
Volume 82,
Issue 9,
1997,
Page 4690-4692
H. Wenisch,
M. Fehrer,
K. Ohkawa,
D. Hommel,
M. Prokesch,
U. Rinas,
H. Hartmann,
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摘要:
We report on the molecular beam epitaxial growth of green (508 nm) and blue (489 nm) light-emitting diodes (LEDs) on conductive ZnSe substrates. The resistivity of the (001)-oriented ZnSe wafers was drastically reduced by a zinc extraction treatment to typical values of1×10−1 &OHgr; cm.The intensity of an additional orange band around 600 nm observed in electroluminescence depends strongly on the wavelength of the multi-quantum-well emission. This can be explained by absorption and effective re-emission in the substrate material named internal photoluminescence and was confirmed by transmission and photoluminescence experiments with the bare substrates. The LEDs with lifetimes up to 100 hours proofed to be surprisingly stable compared to the structures on undoped ZnSe substrates grown before. ©1997 American Institute of Physics.
ISSN:0021-8979
DOI:10.1063/1.366211
出版商:AIP
年代:1997
数据来源: AIP
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93. |
Zone-center optical phonons in wurtzite GaN and AlN |
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Journal of Applied Physics,
Volume 82,
Issue 9,
1997,
Page 4693-4695
Guanghong Wei,
Jian Zi,
Kaiming Zhang,
Xide Xie,
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摘要:
Phonons at the zone-center of wurtzite semiconductors GaN and AlN are studied theoretically within a rigid-ion model. The anisotropies of the zone-center optical phonons induced by the macroscopic electric field are investigated. ©1997 American Institute of Physics.
ISSN:0021-8979
DOI:10.1063/1.366212
出版商:AIP
年代:1997
数据来源: AIP
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94. |
Erratum: “Hydrogen induced anisotropy in magnetic amorphous ribbons” [J. Appl. Phys.81, 815 (1997)] |
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Journal of Applied Physics,
Volume 82,
Issue 9,
1997,
Page 4696-4696
E. M. Alcala,
E. Lopez,
C. Aroca,
M. C. Sanchez,
P. Sanchez,
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ISSN:0021-8979
DOI:10.1063/1.366550
出版商:AIP
年代:1997
数据来源: AIP
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95. |
Erratum: “Pseudo moire´ dislocations appearing in x-ray diffraction topography” [J. Appl. Phys. 80, 2138 (1996)] |
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Journal of Applied Physics,
Volume 82,
Issue 9,
1997,
Page 4697-4697
J. Yoshimura,
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ISSN:0021-8979
DOI:10.1063/1.366552
出版商:AIP
年代:1997
数据来源: AIP
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96. |
Erratum: “Orientation-dependent Ga surface diffusion in molecular beam epitaxy of GaAs on GaAs patterned substrates” [J. Appl. Phys.81, 7273 (1997)] |
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Journal of Applied Physics,
Volume 82,
Issue 9,
1997,
Page 4698-4698
T. Takebe,
M. Fujii,
T. Yamamoto,
K. Fujita,
T. Watanabe,
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ISSN:0021-8979
DOI:10.1063/1.366553
出版商:AIP
年代:1997
数据来源: AIP
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