摘要:

A hydrogenation-disproportionation-desorption-recombination process (HDDR) was applied toSm2Fe17−xGax(x=0.5,1, and 2). The process was studied by means of temperature-pressure analysis, x-ray diffraction and scanning electron microscopy. It was shown that Ga not only stabilizes the interstitially modified compoundsSm2Fe17−xGaxCy(0<y<3)but it also stabilizes the parent compoundSm2Fe17−xGaxagainst the disproportionation by hydrogen. Therefore, only forx=0.5can a nearly complete HDDR be performed. The HDDR-treated and subsequently nitrogenated or carburized samples show coercivities&mgr;0JHCup to 3.1 T and 2.5 T, respectively. Hot compaction increases the density of theSm2Fe16.5Ga0.5Cypowder; however, it leads to a loss of coercivity due to decomposition into&agr;-iron and samarium carbides. ©1997 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.364435

出版商:AIP    

年代:1997

数据来源: AIP

摘要:

Among metal additives M(M:Pt, Pd, Rh, Ir, and Cu) of antiferromagneticCrMnMxfilms, Pd was the most suitable M for obtaining large exchange coupling. For the 50 nmCrMnPd5/40 nmNi81Fe19films, the exchange coupling field of∼28 Oeand the blocking temperature of∼380 °Ccould be obtained. TheCrMn(Pt, Pd, or Rh)xfilms having the optimum content of∼8,∼5,or∼11at.&percent; exhibited the same high blocking temperature. The high blocking temperature of theCrMnPt8,CrMnPd5,andCrMnRh11films was attributed to the nearest neighbor Mn–Mn within the respective films being at the same distance as that at which the Mn–Mn exchange integral showed the maximum negative value. ©1997 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.364436

出版商:AIP    

年代:1997

数据来源: AIP

摘要:

Distinct from the well-known logarithmic degradation in electrical performances of a crystalline silicon solar cell, an anomalous degradation of short-circuit current density(Isc)was observed in a cell irradiated by energetic protons and electrons at high fluence. From results of proton irradiations with various energies (0.4–10 MeV) and high frequency (1 MHz) capacitance measurements, the anomalous drop ofIscis found to be caused by (1) thep-type substrate changes into the intrinsiclike layer (Fermi level shift) by the irradiations, followed by an extension of the depletion layer, and (2) the drift length of the minority carrier becomes shorter than the depletion layer. ©1997 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.364437

出版商:AIP    

年代:1997

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.365546

出版商:AIP    

年代:1997

数据来源: AIP