摘要:

A three‐dimensional finite difference computer simulation has been used to model an entire spherical volume conductor. The model permits conductivity to be dependent on distance from the center of the sphere. The method of successive overrelaxation is employed to solve the finite difference equations in a spherical nonhomogeneous, nonequidistant net. A new method of using successive overrelaxation along each space direction is presented. This method is very suitable for giving starting potentials of the normal successive overrelaxation.

ISSN:0021-8979    

DOI:10.1063/1.328585

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Within the accuracy of the data on thermal expansion, bulk modulus, and specific heat, Gru¨neisen’s gamma at constant volume for 21 metals is shown to be independent of temperature, at least to a substantial fraction of the melt temperature.

ISSN:0021-8979    

DOI:10.1063/1.328586

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

A preliminary result is given for the transverse and longitudinal root mean square divergence angles for an ion beam traversing a sample finite slot accelerator design. The result is obtained using a finite element code to achieve a three‐dimensional explicit solution for the extraction sheath resulting from the solution of the Poisson Vlasov equation. This is the first three‐dimensional explicit sheath solution for a possible neutral beam accelerator electrode design.

ISSN:0021-8979    

DOI:10.1063/1.328587

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

It is demonstrated that the coupling of laser energy into fast‐electron preheat beneath the focal spot decreases with increasing pulse length. An examination of published data corroborates this observation. Tentative theoretical interpretations are advanced.

ISSN:0021-8979    

DOI:10.1063/1.328588

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

It has been shown that single phase solid solution occurs throughout the composition range of the system (Cu1−xAgx)(In1−yGay)Te2, the structure throughout being tetragonal chalcopyrite. Values of lattice parametersaandchave been determined as functions ofxandyand fitted to power series expressions. Contours of constantaand constantcare plotted, and it is indicated that these parameter values can be used to determine the composition of samples in this alloy system.

ISSN:0021-8979    

DOI:10.1063/1.328589

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Using transmission electron microscopy, we have observed helium bubbles and interstitial dislocation loops in gold implanted with helium at below the displacement threshold energy. These results indicate that helium clusters may spontaneously form Frenkel‐pair defects in metals.

ISSN:0021-8979    

DOI:10.1063/1.328590

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Correlations between electron mobility, minority‐carrier lifetime, impurity concentration, and dislocation density have been studied in LEC (liquid‐encapsulated Czochralski)‐grown InP single crystals. Mobilities approaching 30 000 cm2/V s at 77 K, which correspond to compensation ratios of 0.2–0.4, have been obtained. Hole lifetimes as high as 3 &mgr;s have been obtained in dislocation‐free single crystals. The experimental results for lifetimes can be explained by a simple model in which dislocation and impurity are considered as recombination centers.

ISSN:0021-8979    

DOI:10.1063/1.328591

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

A recent paper by Mahan on energy‐gap narrowing in extrinsic semiconductors is compared and contrasted with a previous analysis by Inkson. It is found that, contrary to a statement by Mahan, the two papers rely on the same physical basis but use different means of calculation. The source of confusion is identified as the use of an inconsistent terminology.

ISSN:0021-8979    

DOI:10.1063/1.328592

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

The effects of pyrolytic Al2O3deposition temperature on electrical properties of an inversion‐mode InP (MISFET) metal‐insulator‐semiconductor field‐effect transistor were investigated. An Al2O3gate insulator was deposited using an aluminum isopropoxide organic source on a HCl vapor etched InP surface. An increasing current drift was seen when the insulator was deposited at a temperature below 330 °C. This became exaggerated with decreasing temperature. The observed drift is explained in terms of a time‐dependent threshold voltage associated with the polarization of organic molecules or radicals introduced into the insulator by an incomplete decomposition of the source gas during deposition of the dielectric layers at rather low temperatures. The effective electron mobility of the InP MISFET did not show any dependence on the deposition temperature below 350 °C. At higher temperatures, the effective mobility appreciably decreased.

ISSN:0021-8979    

DOI:10.1063/1.328593

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Si samples implanted with As+have been annealed with a modified commercial scanning electron microscope and with a scanning cw Ar+laser. A comparison of these two techniques is presented, using electron‐beam‐induced current as a probe of minority‐carrier effects. With a minimum of parameter optimization, it is found that electron‐beam annealing is usually superior to laser annealing with respect to both lateral and vertical uniformity.

ISSN:0021-8979    

DOI:10.1063/1.328552

出版商:AIP    

年代:1981

数据来源: AIP