摘要:

This paper reports the results of a Deep Level Transient Spectroscopy (DLTS) study on 14 InP diodes fabricated from five different crystals. From 16 observed DLTS peaks and corresponding Arrhenius plots, seven (or eight) trapping levels have been identified whose characteristics are as follows: Trapping levels CharacteristicsE1= 210 meVS1= 3×10−16cm2E2= 190 mevS2= 7×10−19cm2E3= 330 meVS3= 4×10−16cm2E4= 500 meVS4= 2×10−12cm2E5= 410 mevS5= 1×10−16cm2E6= 630 meVS6= 2×10−14cm2E7= 330 meVS7= 5×10−14cm2

ISSN:0021-8979    

DOI:10.1063/1.330991

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Selectively doped single period AlxGa1−xAs/GaAs heterojunctions with the GaAs layer on top of AlxGa1−xAs were prepared by molecular beam epitaxy. Moderate electron mobility enhancement was achieved when the samples were grown near a substrate surface temperature of 700 °C. Samples grown well below and well above 700 °C did not show observable mobility enhancement. The samples grown at 700 °C and with an electron concentration of 1017cm−3exhibited 300 K mobilities of about 4 500 cm2/Vs and 78 K mobilities of 8500 cm2/Vs, which is about a factor of 2 higher than that of bulk GaAs at 78 K. To our knowledge, this is the first report of mobility enhancement in these inverted single period AlxGa1−xAs/GaAs heterostructures.

ISSN:0021-8979    

DOI:10.1063/1.330992

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Recent theoretical work by Shichijo, Hess, and Stillman on a Monte Carlo simulation of high‐field transport and impact ionization in GaAs is examined. The failure of that calculation to reproduce the experimentally well‐documented orientation dependence of impact ionization can be directly related to the use of a phonon scattering rate that is unrealistically high. It is shown that such high scattering rates lead, by the uncertainty principle to a large collisional broadening (?0.3 to 0.6 eV) of the conduction band, thus invalidating the Monte Carlo simulation and rendering questionable any attempt to relate transport to the band structure. The important role played by the avalanche region width in the orientation dependence of impact ionization is also discussed.

ISSN:0021-8979    

DOI:10.1063/1.330993

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Using semiclassical Monte Carlo simulations and the band structure as calculated by the empirical pseudopotential method, we show that the electron‐phonon scattering rate in GaAs exceeds 1014s−1. As a consequence, impact ionization of ballistic (lucky) electrons becomes extremely unlikely. The objections of Capassoetal. to our treatment are discussed in detail and shown to be physically of minor importance.

ISSN:0021-8979    

DOI:10.1063/1.330994

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

The influence of electron‐electron scattering on mobility in GaAs is studied over the temperature range 80–300 K using the variation principle. The mobilities limited by both polar optic and ionized impurity scattering are reduced more significantly due to electron‐electron scattering than those limited by deformation potential acoustic and by piezoelectric scattering. For a carrier concentration of 1016cm−3, the overall mobility is reduced by about 10% at 80 K.

ISSN:0021-8979    

DOI:10.1063/1.330995

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Experiments show that a region of back surface field is also a region of strong light‐to‐electric‐power conversion capability.

ISSN:0021-8979    

DOI:10.1063/1.330996

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

ac (80 Hz) photoconductivity spectral response curves have been measured for seven single crystal samples of Zn3P2prepared by different preparation techniques and subjected to different heat and surface treatments prior to measurement over the spectral range from 0.6 to 1.2 &mgr;m. Surface ac photoconductivity lifetimes range from 0.4 to 40 &mgr;sec, and bulk ac photoconductivity lifetimes range from 3 to 100 &mgr;sec. Major contributions to the photoconductivity near the band edge of Zn3P2come from transitions of about 1.41 and 1.52 eV, probably corresponding to direct transitions from the two higher‐lying valence bands split by spin‐orbit and crystal fields.

ISSN:0021-8979    

DOI:10.1063/1.330997

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

The compositional dependence of In1−xGaxAsyP1−y(y= 2.2x) MIS (metal‐insulator‐semiconductor) diodeC‐Vcharacteristics was investigated for entire As fraction range (0⩽y⩽1). As the gate insulator, the pyrolytic Al2O3film was employed. Alln‐type MIS diodes fabricated on InP, In0.76Ga0.24As0.55P0.45and In0.53Ga0.47As showed almost entire capacitance variation between the accumulation and high‐frequency inversion capacitances. The compositional dependence of theC‐Vcurve was clearly seen in its hysteresis and the surface state density distribution. TheC‐Vcurve hysteresis becomes less pronounced as the crystal composition is closer to InGaAs. The botton of the V‐shaped surface state density distribution shifts toward the conduction band edge as As fraction (y) increases. Therefore, the surface state density near the conduction band edge was reduced to 1012/cm2eV, compared to the value 1013/cm2eV at InP surface.

ISSN:0021-8979    

DOI:10.1063/1.330998

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Optical and Hall effect measurements on thin film layers of polycrystalline IrSi1.75show that this material is a semiconductor. The band gap is approximately 1.2 eV. The films obtained saturated with silicon werep‐type with a charge carrier density of the order of 4×1017cm−3.

ISSN:0021-8979    

DOI:10.1063/1.330999

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

The effect of nonparabolicity on the amplification of surface phonons in piezoelectric semiconductor films is investigated quantum mechanically in the GHz frequency region. Numerical results are obtained for ann‐type GaAs epitaxial layer on a semi‐insulating GaAs substrate at 77 °K. Results show that the amplification is enhanced for the nonparabolic band structure due to the nonlinear nature of the energy band in semiconductors.

ISSN:0021-8979    

DOI:10.1063/1.331000

出版商:AIP    

年代:1982

数据来源: AIP