摘要:

We have studied the effect of oxygen on the diffusion of Ni into Pt in the Pt‐Ni‐Pt films. Below 400 °C, the diffusion rates of Ni into both Pt layers are greatly reduced by oxygen. Above 500 °C, however, Ni rapidly mixes with Pt layers, which leads to the formation of Ni oxide on the Pt surface in the presence of oxygen.

ISSN:0021-8979    

DOI:10.1063/1.328428

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

The resistivity of amorphous alloys is sentitive to their atomic structure. It has been reported recently that there are significant differences in room‐temperature resistivities as a function of wheel speed (which determines ribbon thickness in the technique of rapid quenching from the melt). These results were interpreted as evidence for a variety of amorphous structures. We have found no differences in resistivities of samples of a similar composition as a function of wheel speed. The reasons for this disagreement are unknown.

ISSN:0021-8979    

DOI:10.1063/1.328429

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

The band‐bending potential profileV(x) in the space‐charge region of an amorphous semiconductor moves regidly in thexdirection, with increased bias, irrespective of the form of the density of localized statesN(E). A recent paper by Singh and Cohen [J. Appl. Phys. 51, 413 (1980)] which suggest this is not true is incorrect in this point. This property leads to simplified schemes for the analysis ofC‐Vmeasurements and field‐effect conductance measurements.

ISSN:0021-8979    

DOI:10.1063/1.328447

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

This paper gives some results on the effects of hydrostatic pressure on electrical characteristics of metal‐oxide semiconductor transistor devices . An enhancement of about 4%–5% in the drain‐source current has been obtained for pressures of the order of 4000 bars. A study of this effect shows that the current increase in essentially due to a change of the mobility of carriers at the interface, rather than to a modification of the oxide layer or interface.

ISSN:0021-8979    

DOI:10.1063/1.328448

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

The EPR signalPbfrom interface SiIIIcenters in oxidized (111) and (100) silicon wafers has been observed to be enhanced up to 20 times under illumination with white light at liquid‐nitrogen temperature. The enhanced EPR signal saturates normally with microwave power, much like its unenhanced counterpart, which indicates that it is not a photoconductive pseudo‐EPR signal, as observed for other silicon surface defects. It is suggested that the effective spin polarization of SiIIIcenters is changed by the light. The optical effect, however, shows complications which may reflect coupling between thePbcenter and the semiconductor carriers.

ISSN:0021-8979    

DOI:10.1063/1.328449

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

In this work the dielectric losses of low‐density polyethylene used in submarine telecommunication cables have been measured as a function of pressure (1–1150 bars), temperature (4–32 °C), and frequency (0.3–12 MHz). These results point out that the dissipation factor tan &dgr; and permittivity &egr; of the insulators increase on the sea bottom; for example, for a cable laying at the depth of 5000 m and temperature of 4 °C, these variations are about &Dgr; tan&dgr;=35×10−6, (F=12 MHz), &Dgr;&egr;=5×10−2.

ISSN:0021-8979    

DOI:10.1063/1.328450

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Experimental data on secondary‐ions yields recently reported by Delineetal. are analyzed critically. It is shown that whereas the results for oxygen bombardment support earlier findings concerning positive‐secondary‐ion emission, the negative‐ion yields observed under cesium impact reveal previously unknown features. A unified explanation for secondary‐ion yields cannot be deduced from the published results. Simple (exponential) laws may be found only under certain experimental conditions or after averaging procedures.

ISSN:0021-8979    

DOI:10.1063/1.328451

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Comments made in the preceding paper are critically discussed. It is argued that conclusions reached in our earlier papers were conservative and justified within our experimental accuracy. Negative‐ion yields under cesium bombardment scale with surface cesium concentration and electron affinity in a manner analogous to the scaling of positive‐ion yields with surface oxygen concentration and ionization potential. Fluorine is shown to be an exception, due probably to saturation effects.

ISSN:0021-8979    

DOI:10.1063/1.328452

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

The specimen current stability of single‐crystal and of sintered LaB6cathodes are compared from the viewpoint of their dependence on the cathode tip temperature and the vacuum pressure. The specimen current of the single‐crystal LaB6cathode is very stable during degradation of the vacuum in the gun chamber, while in the sintered LaB6cathode it becomes very unstable in poor vacuum even though the total emission current is stable. The cause of this remarkable difference between the single‐crystal and sintered LaB6cathodes is discussed.

ISSN:0021-8979    

DOI:10.1063/1.328453

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

The influence of the illumination profile shape on the performance of concentrator silicon solar cells is shown through the variation of the series resistance under different illumination conditions.

ISSN:0021-8979    

DOI:10.1063/1.328454

出版商:AIP    

年代:1981

数据来源: AIP