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91. |
Growth of polymer films on compound semiconductors and dry etching process |
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Journal of Applied Physics,
Volume 50,
Issue 10,
1979,
Page 6567-6569
M. Aktik,
Y. Segui,
Bui Ai,
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摘要:
This paper gives some results on the formation of plasma‐polymerized polysiloxane films on GaAs substrate in order to improve the dielectric‐semiconductor interface properties. Growth rate of polymer films is studied as a function of monomer pressure and time. A dry etching process allowing a good engraving of the polymer film is reported.
ISSN:0021-8979
DOI:10.1063/1.325720
出版商:AIP
年代:1979
数据来源: AIP
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92. |
Erratum: The 〈111〉 line force in a cubic crystal |
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Journal of Applied Physics,
Volume 50,
Issue 10,
1979,
Page 6570-6570
H. C. Yang,
Y. T. Chou,
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PDF (20KB)
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ISSN:0021-8979
DOI:10.1063/1.327279
出版商:AIP
年代:1979
数据来源: AIP
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