Journal of Applied Physics


ISSN: 0021-8979        年代:1996
当前卷期:Volume 80  issue 9     [ 查看所有卷期 ]

年代:1996
 
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1. Scattering of evanescent light by a finite‐size probe in near‐field scanning optical microscopy
  Journal of Applied Physics,   Volume  80,   Issue  9,   1996,   Page  4799-4803

Kenji Fukuzawa,   Hiroki Kuwano,  

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2. Melt‐drawn scanning near‐field optical microscopy probe profiles
  Journal of Applied Physics,   Volume  80,   Issue  9,   1996,   Page  4804-4812

R. L. Williamson,   M. J. Miles,  

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3. Diagnosis of high‐brightness ion beams produced in point pinch diodes
  Journal of Applied Physics,   Volume  80,   Issue  9,   1996,   Page  4813-4818

Katsumi Masugata,   Hisato Okuda,   Kiyoshi Yatsui,   Teruhiko Tazima,  

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4. The frequency spectrum of a phase‐modulated interferometer illuminated by a Gaussian source
  Journal of Applied Physics,   Volume  80,   Issue  9,   1996,   Page  4819-4830

C. McGarrity,   D. A. Jackson,  

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5. Properties of a submicrometer x‐ray beam at the exit of a waveguide
  Journal of Applied Physics,   Volume  80,   Issue  9,   1996,   Page  4831-4836

Werner Jark,   Silvia Di Fonzo,   Stefano Lagomarsino,   Alessia Cedola,   Enzo di Fabrizio,   Andreas Bram,   Christian Riekel,  

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6. Effects of current spreading under oxide current aperture in vertical‐cavity surface‐emitting lasers
  Journal of Applied Physics,   Volume  80,   Issue  9,   1996,   Page  4837-4840

Gye Mo Yang,   Michael H. MacDougal,   P. Daniel Dapkus,  

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7. Precisely tuned emission from porous silicon vertical optical cavity in the visible region
  Journal of Applied Physics,   Volume  80,   Issue  9,   1996,   Page  4841-4844

Minoru Araki,   Hideki Koyama,   Nobuyoshi Koshida,  

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8. The fluorescence of Nd3+in lead borate and bismuth borate glasses with large stimulated emission cross section
  Journal of Applied Physics,   Volume  80,   Issue  9,   1996,   Page  4845-4853

M. B. Saisudha,   K. S. R. Koteswara Rao,   H. L. Bhat,   J. Ramakrishna,  

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9. Influence of free carrier concentration on absorption and third‐order susceptibilities ofn‐type ZnSe crystals
  Journal of Applied Physics,   Volume  80,   Issue  9,   1996,   Page  4854-4858

B. Sahraoui,   R. Chevalier,   X. Nguyen Phu,   G. Rivoire,   W. Bala,  

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10. Applications of the second‐order Bragg interaction in a thin‐film optical waveguide for the transverse electric mode
  Journal of Applied Physics,   Volume  80,   Issue  9,   1996,   Page  4859-4866

Daniel W. C. So,   S. R. Seshadri,  

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