摘要:

This paper is an introduction to dry processing techniques such as ion beam etching, rf sputter etching, and plasma etching. A short description of the systems is followed by a comparison of their properties relevant to the fabrication of electronic and optical devices. The comparison includes etch rates and their dependence on various parameters, masking materials and dimensional accuracy in pattern delineation, obtainable aspect ratios, and edge profiles. The paper concludes with some examples of plasma‐ and ion‐etched patterns.

ISSN:0022-5355    

DOI:10.1116/1.569036

出版商:American Vacuum Society    

年代:1976

数据来源: AIP

摘要:

This paper is a review of the application of ion etching (both ion beam milling and rf sputter etching) to pattern delineation in integrated circuit fabrication. Typical equipment and use conditions are described along with the advantages and disadvantages of each process. Two case histories are described where ion etching has been successfully used to pattern delineate the metallization levels of silicon integrated circuits by sputter etching and magnetic bubble devices by ion milling.

ISSN:0022-5355    

DOI:10.1116/1.569037

出版商:American Vacuum Society    

年代:1976

数据来源: AIP

摘要:

Dry process technology represents a new and exciting technique for defining images in insulators, semiconductors, and metals. It is attractive for application in the semiconductor industry because it results in increased dimensional and shape control for etched images. In addition, it represents a potentially less expensive process which is inherently safer for the people involved. Several different plasma etch system configurations are available for experimentation. Each has unique capabilities for different films. The different equipment configurations are described, including their ability to etch particular films, and the effects of the process on the etched image formed. Information is presented on other halogenated gases that may have potential application as a part of the dry process technology. Since experimental evidence is not available to explain the mechanisms involved in this technology, the published information speculating as to whether radicals, ions, or neutrals are responsible for etching are reviewed.

ISSN:0022-5355    

DOI:10.1116/1.569054

出版商:American Vacuum Society    

年代:1976

数据来源: AIP

摘要:

In contrast to the majority of MOS circuit applications, the use of ion implantation for bipolar devices involves doping levels from 5×1013–1016ions cm−2. This requires implantation systems with milliampere beam current capability. Some problems associated with high power beams are discussed and two contrasting systems are described. The first uses conventional electrostatic scanning techniques for beam currents up to 0.5 mA. The second operates at beam currents up to 3 mA and incorporates a fully mechanical scanning technique. In this way the high beam powers are distributed over a large effective area corresponding to 26 3‐in.‐diam wafers per batch.

ISSN:0022-5355    

DOI:10.1116/1.569055

出版商:American Vacuum Society    

年代:1976

数据来源: AIP

摘要:

Ion‐bombardment sputtering is used in combination with various analytical approaches in the surface analysis of solid samples. Although the advantages of sputter etching in this application far outweigh the disadvantages, there are several ways in which the sputter‐etching process can cause interpretational difficulties. The characteristics of the sputter‐etching process which are responsible for these difficulties include: (a) the fact that the elemental composition of a sputter‐etched surface will in general be different from that of the bulk solid, (b) the tendency of certain materials to develop extensive microtopographical structure when they are subjected to ion bombardment, and (c) the fact that ion bombardment can cause motion of atoms in the sample by direct momentum transfer, cascade mixing, enhanced diffusion, or, in the case ofionized species, enhanced drift motion. A discussion of these effects wil be presented and an attempt will be made to assess their significance in the analysis of solid samples.

ISSN:0022-5355    

DOI:10.1116/1.569056

出版商:American Vacuum Society    

年代:1976

数据来源: AIP

ISSN:0022-5355    

DOI:10.1116/1.569057

出版商:American Vacuum Society    

年代:1976

数据来源: AIP

摘要:

Two frequently observed problems with Schottky diodes are soft current–voltage characteristics and low avalanche breakdown voltages. These problems are sometimes found immediately upon fabrication, or they may develop during use. It is proposed that these phenomena can be explained by the existence of a thin layer (25–250 Å thick) between the metal and semiconductor which (i) has a high charge density, (ii) has a high trap density, and (iii) is conducting. Observed barrier height changes are explained by the trapping of charge carriers flowing through the layer and the lowered avalanche breakdown voltage by heating of carriers in the high field in the intervening layer. These explanations have been confirmed by measurements on GaP and GaAs diodes having a deliberately grown thin interfacial oxide ∠100 Å thick. Such an interfacial layer can be detected using a pulsed current–voltage technique described in the paper.

ISSN:0022-5355    

DOI:10.1116/1.569058

出版商:American Vacuum Society    

年代:1976

数据来源: AIP

摘要:

The retarding potential electron beam technique has been used to study the photovoltage spectrum of Ar‐bombarded GaAs (100) surfaces. Clean surfaces and those with absorbed O2, NO, NH3, H2S, SO2, and CO2were investigated. The spectral region above the band‐gap energy shows structure which changes in position and intensity in ways characteristic of the adsorbed gas. Similar structure is seen on the GaAs (100) surface prior to any Ar bombardment. Heating and cooling the sample do not result in appreciable changes to the photovoltage spectra, but heating does cause a transient loss of photovoltaic activity. Several possibilities for the origin of the photovoltage structure are discussed, including surface states and electron–phonon interaction.

ISSN:0022-5355    

DOI:10.1116/1.569059

出版商:American Vacuum Society    

年代:1976

数据来源: AIP

摘要:

It has been shown that noncrystalline Ge‐sputtered films prepared under a range of conditions display a wide variation in structure, composition, and film properties depending on the sputtering process parameters. Data are presented in which optical absorption edge, stress, density, argon and oxygen contents, and other film properties can be varied continuously as a function of preparation parameters. The range of changes which can be brought about in these properties is enormous: changes of 20% in density, 500% in Ar content, and positive to negative in macroscopic stress are achieved within ’’normal’’ operating conditions. The data demonstrate unequivocally that the term ’’sputtered film’’ can refer to only a specific sample, not a reproducible material.

ISSN:0022-5355    

DOI:10.1116/1.569060

出版商:American Vacuum Society    

年代:1976

数据来源: AIP

摘要:

Surface crystallization kinetics are measured for pure selenium 60‐μm vapor‐deposited films. Xerographic lifetimes of selenium photoreceptors are shown to be limited by the overall transformation level of top surface crystallization. The temperature dependence of the overall top surface transformation rate may be plotted in an Arrhenius fashion yielding an activation energy of 26 kcal/mol. Top surface crystallization kinetics for thermal aging of 60‐μm films in argon and dry air are similar, both being faster than bulk kinetics.

ISSN:0022-5355    

DOI:10.1116/1.569074

出版商:American Vacuum Society    

年代:1976

数据来源: AIP