摘要:

Demagnifying EPS have the capacity to generate as much as 5000 line pairs per diameter at a resolution as small as 0.1 μ. The diameter of the recorded image and the maximum number of line pairs per diameter decrease with increasing values of the chromatic field aberrations of the lens system, and with increasing relative energy width of the electron beam. The optimum aperture yielding maximum probe current at a given resolution and image field diameter depends mainly on the value of the coefficients of image curvature and isotropic and anisotropic astigmatism of the lens system.

ISSN:0022-5355    

DOI:10.1116/1.1318513

出版商:American Vacuum Society    

年代:1973

数据来源: AIP

摘要:

X-ray lithography provides a means of replicating, in a single large-area exposure, submicron linewidth patterns made by scanning electron beam lithography. The technique is complementary to existing electron beam technology, and provides a number of unique advantages: (i) it is simple and inexpensive; (ii) the penetrating character of x-rays makes it relatively insensitive to contamination; (iii) both positive and negative type resists can be used; and (iv) because of the absence of backscattering effects, both positive and negative type patterns can be made with equal facility. Exposure times of seven minutes have been achieved for 3 μ mask-sample gaps. This can be decreased to less than one minute by using a rotating anode, or by reducing the mask-sample gap. The most recent results in x-ray lithography are reported, including the fabrication of surface wave devices. The elements of a multiple-mask alignment system are described. This system should permit the rapid and automatic superposition on a substrate of patterns from several different masks, to a precision of 1/10 μ.

ISSN:0022-5355    

DOI:10.1116/1.1318514

出版商:American Vacuum Society    

年代:1973

数据来源: AIP

摘要:

Beam profile measurements have been carried out to study the influence of the length of the ion source outlet, the source pressure, and the source magnetic field on the properties of an ion beam. From a variation of the outlet length conditions can be deduced for optimum design with respect to gas efficiency and profile shape. The profile width is found to decrease with increasing source pressure and decreasing magnetic field. This effect is attributed to a corresponding change in the energy distribution of the ions. Profile distortions occurring at high source pressure are likely to be due to ion scattering in the extraction region.

ISSN:0022-5355    

DOI:10.1116/1.1318515

出版商:American Vacuum Society    

年代:1973

数据来源: AIP

摘要:

We describe a neutral beam source capable of producing pulsed deuterium beams of up to 15 A equivalent current at 20 keV for heating and sustaining fusion plasmas. It consists of a large-area plasma source, multiple-aperture accel-decel extractor, and closely coupled charge-exchange cell. A larger source, to produce 80 A equivalent deuterium beams at 20 keV, is being constructed.

ISSN:0022-5355    

DOI:10.1116/1.1318516

出版商:American Vacuum Society    

年代:1973

数据来源: AIP

摘要:

This article describes recent advances in electron-beam recorders (EBR) which utilize the inherent flexibility of electron beams and computer control for a variety of applications such as remote sensor imagery, computer micrographics, microelectronics, and other high resolution digital and analog imagery. These advanced electron beam recorders can be used on-line with computers or remote sensors, or off-line with analog or digital magnetic tape inputs, in a variety of scanning modes using computer control.

ISSN:0022-5355    

DOI:10.1116/1.1318517

出版商:American Vacuum Society    

年代:1973

数据来源: AIP

摘要:

Some properties of a glow discharge source in which boron trifluoride was used as a source feed-gas are described. The source generated a beam with a multipeaked energy spread with width approximately equal to the voltage used to generate the discharge (up to several kilovolts). The energy distributions of different ion species extracted from the source were not all the same and, in particular, the section of the beam taken from an energy band situated a few hundred volts above cathode potential was found to consist essentially of boron ions. Beryllium ions were observed to be generated close to the cathode of the source from atoms sputtered from the extraction canal. The highest total output current of the source was 100 μA.

ISSN:0022-5355    

DOI:10.1116/1.1318518

出版商:American Vacuum Society    

年代:1973

数据来源: AIP

摘要:

Optical waveguides are formed by implantation of various ions (H+,H2+,He+,Li+, andB+) in fused quartz and the properties of mode propagation are investigated at 6328 Å. The origin of the refractive index change is discussed from the ESR measurement. The depth distribution of defects is measured by ESR measurements and the effective thickness of the high-refractive index region is estimated from the measured depth distribution of defects. In as-implanted samples, the propagation loss decreases with decreasing fluence, but a minimum fluence is required for a given implantation energy for the lowest mode to be propagated. The propagation loss is explained to be internal absorption due to color centers introduced by ion implantation. It is shown that the propagation losses are different for various implanted ions. Annealing behavior of the propagation loss and the refractive index change is also presented.

ISSN:0022-5355    

DOI:10.1116/1.1318519

出版商:American Vacuum Society    

年代:1973

数据来源: AIP

摘要:

An effective modulation of a He–Ne laser beam at a wavelength of 6328 Å guided in a semiconductor ZnS thin film has been obtained when the guided wave travels transversely across the region irradiated by intense uv light. This seems to be caused by the absorption effect by means of the optically excited free carriers. The modulation ratio has shown monotonic increase with the excitation intensity. At maximum excitation, a modulation ratio of 35% was obtained. For normal transmission of a laser beam through the excited shallow region near the surface, measurements of reflectance change and phase retardation have been also carried out under uv light and pulsed electron excitations, are discussed in connection with the absorption effects by the free carriers generated by these excitations. In the case of excitation by an electron beam of 15 mA and 30 kV, the fractional increase of the absorption was1×10−3.

ISSN:0022-5355    

DOI:10.1116/1.1318520

出版商:American Vacuum Society    

年代:1973

数据来源: AIP

摘要:

The method of fabrication and measured characteristics of phosphorous ion-implanted resistors made on high-resistivity 15–20 Ω cm p-type silicon substrates are presented. The process included a shallow boron-implanted layer at the surface to prevent surface inversion due toQss. It is demonstrated that enhancement N-channel MOSFET devices can be processed together with the implanted resistors. The range of phosphorous doses studied was1×1012–5×1014/cm2and the range of anneal temperatures considered was 500–950 °C. Results are given for measurements of sheet resistivity vs dose and anneal temperature, and for temperature coefficient of resistance. The advantages of using high-resistivity substrates for the implanted resistors are discussed.

ISSN:0022-5355    

DOI:10.1116/1.1318521

出版商:American Vacuum Society    

年代:1973

数据来源: AIP

摘要:

Picosecond pulse electron beams were generated by means of a transverse-type gate and a buncher. The 20 keV beam was deflected by a 1 GHz symmetrical reentrant cavity and chopped by a slit into several tens picosecond pulses. These pulses were bunched by a 4 GHz reentrant cavity. The pulsed beam was then deflected by the other 1 GHzx–ydeflectors and finally reached the screen, where the pulse width was measured by comparing the lengths of two chopped arcs with that of the unchopped full circle. A minimum pulse width of 6 psec was recorded. It was observed that as the deflecting voltage of the transverse gate increases, the pulse width decreases at first, reaches a minimum, and then increases. This can be explained by the longitudinal velocity modulation due to the fringing field of the deflector. When the beam chopped by the transverse gate was injected to the longitudinal gate, the maximum phase compression ratio was less than 5; this is also explained by the above-mentioned effect.

ISSN:0022-5355    

DOI:10.1116/1.1318522

出版商:American Vacuum Society    

年代:1973

数据来源: AIP