摘要:

A review is presented of a vapor-phase growth method that has been developed for the synthesis of a broad spectrum of III–V compounds. The predominant feature of this technique is the use of gases as the source chemicals, thereby providing improved control of the chemical composition, homogeneity, crystalline perfection, and impurity concentrations and distributions of the epitaxial layers. As a result, a number of notable advances have been made with respect to the material properties and device utilization of several III–V compounds. The chemistry of the deposition processes was studied by means of a mass spectrometer coupled to the vapor-phase growth system. Results of these studies are presented and discussed.

ISSN:0022-5355    

DOI:10.1116/1.1316391

出版商:American Vacuum Society    

年代:1971

数据来源: AIP

摘要:

The versatility of rf sputtering and related processes often allows one to tailor the properties of thin films in ways not always available with other methods of film deposition. Effects that occur at the target, in the gas discharge, and at the substrate are reviewed in the context of their over-all effect on the physical and chemical properties of thin films. Special emphasis is placed on the effects of substrate temperature and the bombardment of substrates by various energetic species. Techniques involving controlled bombardment of substrates (deposition with rf-induced substrate bias) are considered in detail.

ISSN:0022-5355    

DOI:10.1116/1.1316386

出版商:American Vacuum Society    

年代:1971

数据来源: AIP

摘要:

A review of molecular-beam epitaxy of GaAs and the observation of surface structures with high-energy electron diffraction in an ultrahigh-vacuum system is described. The utilization of these surface structures as growth conditions to producen- andp-type layers when doped with Sn, Ge, and Mg, and the electrical and optical evaluations of the layers thus grown is also discussed. The molecular-beam epitaxy method may be used to fabricate extremely thin multilayer structures and may play an increasing role in semiconductor technology.

ISSN:0022-5355    

DOI:10.1116/1.1316387

出版商:American Vacuum Society    

年代:1971

数据来源: AIP

摘要:

A review is given of the work on the passivation of silicon surfaces with thermally grown silicon dioxide films. This work has led to the high performance and stability of bipolar transistors and insulated gate field-effect transistors used in integrated circuits. The main emphasis is on the processing methods and measurements which have led to the optimization of the passivating properties of silicon dioxide films by controlling fixed charge, interface states, and drift.

ISSN:0022-5355    

DOI:10.1116/1.1316388

出版商:American Vacuum Society    

年代:1971

数据来源: AIP

摘要:

Electron-beam fabrication techniques are becoming of increasing interest as thin-film electronic devices get smaller and the need for quick turn-around in their fabrication becomes more important. This short paper outlines the current state of electron-beam fabrication technology and indicates some of the areas where it has been employed successfully.

ISSN:0022-5355    

DOI:10.1116/1.1316389

出版商:American Vacuum Society    

年代:1971

数据来源: AIP

摘要:

Sputtering of solid surfaces by low-energy ion beams can remove materials at a rate useful for machining purposes; the system can be called an ion-milling machine. Milling of solid materials, with minimum change to adjacent materials, is possible by this method. The first part of the paper discusses the parameters involved in ion interactions with solid surfaces. Six different ion-milling techniques and ion sources are next described. Finally, practical procedures obtained with some current problems are given.

ISSN:0022-5355    

DOI:10.1116/1.1316390

出版商:American Vacuum Society    

年代:1971

数据来源: AIP

摘要:

A vacuum-evaporated Chromel and constantan thin-film thermocouple is developed and used to measure the deposition temperature of evaporated Permalloy films. The maximum Permalloy film temperature is 128°C higher than the glass substrate temperature during deposition for low-evaporation rates (15 Å/sec) due to radiation energy from the tungsten boat and condensation energy from the Permalloy films. In all cases the temperature change due to radiation energy greatly exceeds that due to condensation energy. The heat loss through glass substrate is negligible during deposition; under this condition the temperature change during deposition is predicted by theory.

ISSN:0022-5355    

DOI:10.1116/1.1316375

出版商:American Vacuum Society    

年代:1971

数据来源: AIP

摘要:

Quartz-crystal oscillators were operated in conjunction with film thickness monitors which convert the shift of the period of oscillation into indicated film thicknesst. Films exceeding 125 kÅ of Cu (>415 kÅ of Al equivalent) were deposited on individual crystals. The deposit on glass slides simultaneously exposed to the deposition process was weighed. Up to the largest masses investigated, the indicated thickness of the deposit was linearly proportional to the deposit thickness on the slides. This result is unexpected since differences in the elastic constants of film material and quartz and/or changes of the oscillatory behavior could lead to deviations. Furthermore, the effective oscillating area of various crystals was only slightly larger than that of the deposit. The relationship between frequency shift and incremental deposit thickness was found to agree with theoretical predictions.

ISSN:0022-5355    

DOI:10.1116/1.1316376

出版商:American Vacuum Society    

年代:1971

数据来源: AIP

摘要:

Composition variations occurring in vapor-deposited alloy films have been quantitatively evaluated by treating the vapor deposition process as a solidification process. A mathematical model appropriate for solute redistribution during the solidification of a binary alloy was used to explain and predict compositional variations in vapor-deposited Ni–Fe films. Predictions based on such a model agree with recent experimental measurements during the final 50% of film formation. In earlier stages of vapor deposition, predicted film composition exceeds measured composition by approximately 3%.

ISSN:0022-5355    

DOI:10.1116/1.1316377

出版商:American Vacuum Society    

年代:1971

数据来源: AIP

摘要:

Condensation coefficients were measured by impinging a known flux of gas from a molecular beam onto the surface of a quartz crystal microbalance. The rate of change of the quartz crystal's resonance frequency was used to calculate the condensation rate. The condensation coefficient, which is the ratio of the condensation rate to the impingement rate, was found to be ≥0.95 for Ar, Kr, Xe, andCO2when surface temperatures are less than 26, 37, 47, and 55 K, respectively, and the gas temperatures are ≤300 K for Ar, Kr, and Xe and ≤200 K forCO2. The condensation coefficients of Ar on Kr and Xe films, Kr on Ar, and Xe on Kr were also determined as a function of surface coverage from about 0.01 to 10 atomic layers.

ISSN:0022-5355    

DOI:10.1116/1.1316378

出版商:American Vacuum Society    

年代:1971

数据来源: AIP