摘要:

Vacuum evaporation and sputtering processes of materials in use or under investigation for passive thin-film components in integrated circuits are reviewed. Molybdenum, silver, gold, and the platinum metals have been considered to replace aluminum contacts and interconnections. However, silicide formation at low temperatures and lack of the required contact properties limit their usefulness. Dielectric materials amenable to controlled deposition are silicon monoxide and dioxide. Both oxides have low dielectric constants and are more suitable for insulation layers than for capacitors. To produce stress-free, nonhygroscopic SiO films, control of deposition conditions is most important. The integration ofSiO2films depends on the availability of a process yielding good properties at low deposition temperatures. Radio frequency sputtering seems to meet these requirements. Nichrome and Cr-SiO cermet are possibilities for integrated thin-film resistors. Their fabrication techniques and the resulting properties are reviewed. Tighter process control than presently possible is needed for integration into monolithic circuits.

ISSN:0022-5355    

DOI:10.1116/1.1492451

出版商:American Vacuum Society    

年代:1966

数据来源: AIP

摘要:

Since there is at present no standard means of calibrating vacuum gauges at pressures below 1 Torr, one often finds that such gauges frequently differ in their indications by 30% or more. In many areas of research it is necessary to measure pressures accurately to within 2%. Thus, to achieve this goal, it is necessary to devise a means to calibrate the measuring gauges. This calibrator permits one to calibrate a vacuum gauge over the pressure range of10−4Torr to atmospheric or above increments as small as10−4Tort or as large as 3.5 Torr. Virtually any value in between is possible. Three volumes are interconnected by a pair of solenoid valves. Volume 1, with the gauge to be calibrated connected to it, is evacuated to some very low pressure, say10−6Torr, and sealed off. Volume 3 is sealed off at some readily measurable pressure. Then volume 2 is filled from volume 3 and emptied into volume 1. This process is termed a step. If the three volumes are measured, then the pressure inV1can be calculated at the end of every step and compared with the gauge indications. The general equations describing the pressure rise inV1as a function of step number are obtained. The effect of an initial pressure, not zero, and a finite leak and/or desorption rate are also considered. A description of the actual apparatus is also included.

ISSN:0022-5355    

DOI:10.1116/1.1492452

出版商:American Vacuum Society    

年代:1966

数据来源: AIP

摘要:

Studies have been made of the parameters of time, pressure, and temperature that influence adhesion of structural metals in vacuum. The objective was to provide spacecraft designers with engineering data to ensure separation of instrument capsules and other components from spacecraft in the space environment. These studies were conducted at an environmental pressure of5×10−9Torr over a temperature range of 25 °C (77 °F) to 500 °C (932 °F) and at compressive stresses within the elastic limits of the materials. Surface finishes and cleanliness of the test specimens simulated spacecraft hardware. Loading was applied by both static and dynamic modes and the adhesive forces were measured. Data are presented showing the extent of adhesion of a wide variety of materials under these conditions. With static loading, no adhesion occurred except at elevated temperatures. With dynamic loading, adhesion occurred at lower temperatures and lower compressive loads than under static conditions.

ISSN:0022-5355    

DOI:10.1116/1.1492453

出版商:American Vacuum Society    

年代:1966

数据来源: AIP

摘要:

A description of cold cathode magnetrons operating as gauges has been developed in terms of the conditions for establishing a discharge and the effects of space-charge buildup. Pressure response curves for NRC type 552 (Redhead) and GCA model 1410 (Kreisman) gauges were determined by a conductance-regulated, pressure-ratio method using Bayard–Alpert type gauges for upstream pressure reference. Four characteristics of normal magnetrons operated below cutoff are predicted from the discharge mechanism and correlated with test data: (1) an out-of-strike state characterized by a steady pressure-independent gauge reading (about5×10−14Torr) due to leakage current; (2) a minimum pressure threshold for operation,2.7×10−12Torr for the NRC 552,1.7×10−10Torr for the GCA 1410; (3) a range (below10−9Torr) of nonlinear pressure-dependent response moderated by space charge buildup; and (4) a range of near linear response corresponding to the region of nearly saturated space charge.

ISSN:0022-5355    

DOI:10.1116/1.1492454

出版商:American Vacuum Society    

年代:1966

数据来源: AIP

摘要:

Single crystal silicon has been grown epitaxially on a number of single crystal oxide substrates by chemical vapor deposition techniques. Such growth has been obtained in large area single crystal form on α-alumina, spinel, and beryllia. The distinct orientation relationships between the silicon deposits and a multiplicity of crystallographic planes of the various insulating substrates are indicated. Compatible with the earlier observed growths of single crystal tungsten on α-alumina, a model which assumes a fit between the silicon and the metal ion sites in the oxide substrate can account for all the epitaxial geometries. A concept of multiple fits in the metal-oxide system in terms of integral lattice parameter values as a guide in substrate selection is suggested. Representative electronic properties of the films and model fabricated devices, as well as a measure of their consequence in microelectronics, are given.

ISSN:0022-5355    

DOI:10.1116/1.1492455

出版商:American Vacuum Society    

年代:1966

数据来源: AIP

ISSN:0022-5355    

DOI:10.1116/1.1492456

出版商:American Vacuum Society    

年代:1966

数据来源: AIP

ISSN:0022-5355    

DOI:10.1116/1.1492457

出版商:American Vacuum Society    

年代:1966

数据来源: AIP