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11. |
Electric conduction and electroluminescence of plasma‐polymerized ethylene thin films |
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Electronics and Communications in Japan (Part II: Electronics),
Volume 74,
Issue 2,
1991,
Page 89-95
Keiichi Miyairi,
Yumiko Kondo,
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摘要:
AbstractA thin film was formed using plasma from a mixture of Ar gas and ethylene as monomer at 13.56 MHz. The film is similar to the chemically synthesized polyethylene film. However, it has a three‐dimensional network structure and is superior in thermoresistance and mechanical strength.To determine the electrical breakdown process of this film, the high‐field conduction and electroluminescence phenomenon were investigated. From the dependencies of the conduction current on the electrode and temperature, the luminescence phenomenon was considered to be caused by charge injection based on the Schottky effect and trapping in the impurity lev
ISSN:8756-663X
DOI:10.1002/ecjb.4420740211
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1991
数据来源: WILEY
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12. |
The correction procedure for “packaged‐type transistor”s‐parameter measurements (∼1 GHz) |
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Electronics and Communications in Japan (Part II: Electronics),
Volume 74,
Issue 2,
1991,
Page 96-99
Hitoshi Aoki,
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PDF (291KB)
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摘要:
AbstractIn the measurement of transistorS‐parameters, an automatic network analyzer presently is used in which the matching of the measurement system and the directivity including the measurement jigs are calibrated accurately by means of the twelve‐term calibration functions contained in the analyzer. However, when a packaged transistor is measured, the parasitic capacitance, lead inductance and resistance are contained. The author developed a simple procedure for modeling these parasitic elements and removing them by means only of subtraction from the mutual transformation ofS→Y→Zparameters. Experiments were carried out with an HP8753 Network Analyzer and TECAP model parameter extraction software [1] and the results were compared with those by the SPICE simulation. Good agreement was obtained in the frequency vs. gain characteristics up to 1 GHz. It is now possible to obtain data very close to those of only the transistor
ISSN:8756-663X
DOI:10.1002/ecjb.4420740212
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1991
数据来源: WILEY
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13. |
A 2.2 gbit/s si bipolar 8 × 8 crosspoint switching LSI |
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Electronics and Communications in Japan (Part II: Electronics),
Volume 74,
Issue 2,
1991,
Page 100-110
Naoaki Yamanaka,
Shiro Kikuchi,
Masao Suzuki,
Michihiro Hirata,
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PDF (688KB)
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摘要:
AbstractA high‐speed 8 × 8 space‐division switching LSI has been developed for video and HDTV switching and broadcasting applications in the future B‐ISDN. The LSI employs a new circuit design and super self‐aligned process technology (SST−1A), and is switched successfully with a bit error rate of less than 10−9at 2.5 Gbit/s using a 29−1 pseudorandom NRZ sequence. Pulse jitter has been limited to less than 70 ps at 2.2 Gbit/s by utilizing a small internal voltage swing (225 mV) employing a differential CML cell. The LSI has an ECL‐compatible interface, −4.0 V and −2.0 V power supply voltages, and power dissipation of less than 997 mW. High‐speed address control memories (ACMs) are integrated mono‐lithically into the LSI, which can operate both synchronously and asynchronously.Using several of these LSIs, a three‐stage switching network prototype system has been demonstrated. This network brings us closer to realizing a large‐scale, gigabit‐order, high‐sp
ISSN:8756-663X
DOI:10.1002/ecjb.4420740213
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1991
数据来源: WILEY
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