摘要:

AbstractIn an attempt to realize a stable Cu metallization in Si‐LSI, a Cu/CuTi2/Ti/Si contact system was prepared and its thermal stability was studied. As a result, although the phase transition from the intermediate CuTi2phase to the CuTi phase was observed with increasing annealing temperature in the contact system, the interface between the metallization layers (Cu and CuTi) and Si in the system suppressed the excess diffusion of Si at temperatures up to 570°C. the reason is that the Ti silicide formed at the Si interface acts as an Si diffusion barrier until its chemical state transforms into TiSi2, which is the final phase of Ti silicide. However, the contact system failed due to a direct chemical reaction between Ti and/or Cu in CuTi and Si which diffused into the upper layer through TiSi2when Ti silicide at Ti/Si interface formed TiSi2at 600°C. Then the contact system resulted in the phase‐separated bilayer structure of silicide. It was revealed from these results with the thermal stability of this contact system is related closely to the phase transition of the Ti silicide layer at the Si interface with increasing annealing temper

ISSN:8756-663X    

DOI:10.1002/ecjb.4420770111

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1994

数据来源: WILEY