摘要:

AbstractA field‐usable optical fiber‐ribbon holder is proposed. Optical fiber ribbon is fixed by placement between wavy plates. The fiberfixing mechanism is analyzed theoretically and experimentally. Optimum fiber‐holder sizes are also investigated. Using this fiber holder, average and maximum fiber‐end displacement of 3.8 and 15μm are obtained. Lowloss splicing of SM fiber ribbon is confirmed, with average splice loss of

ISSN:8756-663X    

DOI:10.1002/ecjb.4420710901

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1988

数据来源: WILEY

摘要:

AbstractDue to recent progress in semiconductor lasers, small‐sized optical sources with good coherency characteristics are easily obtainable. Using semiconductor lasers instead of previously employed light‐emitting diodes, it is believed that construction of new photocoupler systems is possible. In this paper, using the coherent light, the basic behavior of photocouplers is discussed and parallel and serial photocoupler systems with new functions are propo

ISSN:8756-663X    

DOI:10.1002/ecjb.4420710902

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1988

数据来源: WILEY

摘要:

AbstractThe hollow cathode HeCd+laser includes twelve oscillation lines. The oscillation line of 441.6 nm (blue), 533.7 nm and 537.8 nm (green), and 635.5 nm and 636 nm (red) in the visible area can be oscillated concurrently by using wide‐band mirrors for a resonator to produce a white light laser. This laser is expected particularly in the image production industry because a single laser tube allows the three primary colors of light to be produced and the green wavelengths are optimum for green emulsion of photographic films. However, it has been difficult to produce the hollow cathode HeCd+laser of continuous oscillation and high power. We have investigated the high power and output stability of the white light laser for practical purposes. As a result of examining the structure of the hollow cathode as a means for high‐power laser, we could realize a high‐power HeCd+white light laser by using a new structure which was an improvement over the conventional flute type. This paper explains the structure of the hollow cathode and shows the dependencies of the output on the Cd vapor pressure, He pressure, input power for the cathode length of 61 or 43 cm, and the noise characteristics for the cathode leng

ISSN:8756-663X    

DOI:10.1002/ecjb.4420710903

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1988

数据来源: WILEY

摘要:

AbstractThe dc‐dc converter with peak‐current control has the following features, compared with the traditional type: (1) the output voltage is affected less by the input voltage variation; (2) it is easy to protect the circuit from the overcurrent due to output short‐circuit, etc.; (3) the power sharing is easy in the parallel operation of converters. Especially, the feature for the parallel operation is interesting from the viewpoint of high‐power, high‐reliability supply. However, the quantitative analysis has not been made for this property. As a typical case of parallel operation, this paper considers the parallel operation of two forward‐type converters with peak‐current control. The static and dynamic characteristics as well as the stability are analyzed for the case where the circuit is used as the constant‐voltage supply with feedback. The result of analysis agreed well with the result of experiment. The condition for power sharing is derived. The result can easily be extended to the case ofNconverters and provides a guideline for the design of the par

ISSN:8756-663X    

DOI:10.1002/ecjb.4420710904

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1988

数据来源: WILEY

摘要:

AbstractDifferent types of arc discharge, that is, steady arc, showering arc or no discharge (initial arc), occur at the break of contacts. These arcs are considered to cause not only contact erosion, but also to affect contact resistance. In this paper, the relation between arc‐discharge types and contact resistance is investigated on Ag, Pd and some Ag‐Pd alloy contacts with Pd content of 30, 50 and 70 wt% by using the automatic data acquisition system of newly developed contact resistance. The following can be made clear. Under no discharge and showering arc discharge, contact resistance is always low at any Pd content. However, under steady arc discharge, contact resistances of the contacts with Pd content more than 50 wt% remain low and those of Ag and of AgPd30 become high. From the results of the approximation of distributions of the measured contact resistances with Weibull distribution function, it can be stated that the calculated location parameterROgives the approximate value of constriction resistance and the scale parameterRαgives that of film resistance. On the other hand, the observation of contact surfaces reveals the relation between contact resistance and surface conditions. Also, the differences of arc duration or discharge voltage waveforms according to Pd content are recognized. They are considered to influence surface conditions or contact resistance. A physical model that describes these phenomena is prop

ISSN:8756-663X    

DOI:10.1002/ecjb.4420710905

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1988

数据来源: WILEY

摘要:

AbstractThere have been many recent studies on thin‐film deposition in plasma. However, only a few reports have considered the relation between the film deposition and plasma characteristics. In this study, the influence of the plasma characteristics on the thin‐film deposition was investigated via the dc planar magnetron plasma chemical vapor deposition (CVD) technique. Assuming that the characteristics of inert gas plasma measured by probes are the same qualitatively as those of reactive gas plasma, tinoxide thin films which have been used for transparent electrodes, gas sensors, and so forth, are deposited. The decomposition of source materials is accelerated in the highdensity plasma region where the thin films deposited, are composed of highly densified particles and have a crystalline structure. The electrical conductivity of these films is higher than that of films formed in a low‐density plasma r

ISSN:8756-663X    

DOI:10.1002/ecjb.4420710906

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1988

数据来源: WILEY

摘要:

AbstractThe magnetic and conduction properties of certain ferrites (referred to as temperature‐sensitive magnetic semiconductors (TMS)) exhibit marked temperature dependence. The temperature dependence of the resistance of a TMS is similar to that of a semiconductor thermistor at low voltage. At higher voltages, three regions are observed in the symmetric, bidirectional characteristics. These are a cutoff state, a negative resistance state and an “on” state.Therefore, a TMS can act as a multifunction magnetic semiconductor device which can be used to satisfy thermistor and bidirectional diode characteristics. Application of TMS diodes for their ability to handle overvoltage and overheating is disc

ISSN:8756-663X    

DOI:10.1002/ecjb.4420710907

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1988

数据来源: WILEY

摘要:

AbstractA new two–dimensional process simulator HITOP is developed which can handle oxidation, diffusion, and ion implementation processes. This simulator can be used for process design of practical scaled MOS basic circuits and has the following characteristics: (i) the region of a size from a few μm to a few tens μm containing multiple MOS devices can be simulated simultaneously; (ii) the variation of the layered film formation during the process can be recognized; (iii) a highly accurate simulation is possible from the viewpoint of physical chemistry modeling and of numerical algorithms; (iv) a bidirectional interface with the shape simulator is contained. It is possible to accept the shape of the etching and deposition processes, continue execution, and return the shape data after the process to the shape simulator. For the benefit of the user, changes of the shape of the junction during the process, situation of the growth of the oxide film and the modification of the top layer are displayed successively so that the basic information for circuit design is provided. The present system can be used with a layout processor and a device simula

ISSN:8756-663X    

DOI:10.1002/ecjb.4420710908

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1988

数据来源: WILEY

摘要:

AbstractTo reduce the time needed for testing VLSI memory chips, an on‐chip multibit‐test (MBT) scheme is proposed. The conditions for the test scheme and the relationship between the test mode and the memory array architecture (data bus structure, redundancy scheme, and so forth) are discussed. When the MBT mode is applied to the 1‐Mbit DRAM, the increase in the chip area and power consumption are minimized, and the test for a 256‐K bit device can be adopted to the memory array operating test. Using this technique, the time required for testing the device is reduced one‐half to

ISSN:8756-663X    

DOI:10.1002/ecjb.4420710909

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1988

数据来源: WILEY

摘要:

AbstractOptimization of mask layout for an IIL device with a P‐well base was carried out by investigating the influence of the mask pattern on the gate delay time, using the experimental and simulated results. The simulation of the gate delay time was designed to obtain the electrical properties based on the IIL gate structure and the impurity distribution. Using the stored charge model, the high injection effect and the distributed base resistance of an NPN transistor were taken into account. The experimental and simulated results were in good agreement. The high‐speed operation of an IIL device is dependent on the decrease of the collector and emitter junction capacitance of an NPN transistor by the decrease of the collector and base areas, the decrease of the stored charges in the emitter, and the emitter junction capacitance by optimization of the separation between the base and N+collar and of epi‐thickness, and the suppression of the influence from the distributed base resistance by eliminating the excessive base current using optimized base width in an injector PNP trans

ISSN:8756-663X    

DOI:10.1002/ecjb.4420710910

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1988

数据来源: WILEY