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1. |
Study of BiCMOS cache memory |
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Electronics and Communications in Japan (Part II: Electronics),
Volume 72,
Issue 9,
1989,
Page 1-9
Kozaburo Kurita,
Takashi Hotta,
Hideo Maejima,
Atsuo Hotta,
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摘要:
AbstractTo improve the speed of the processors for CPU of minicomputers and other systems, it is required to improve the machine cycle and the memory cycle, which are the performance indexes of the system. The general idea to realize a high‐speed memory cycle is to apply the cache memory, which provides a hierarchical structure for the memory. This paper considers the realization of the cache memory by Hi‐BiCMOS (high‐performance bipolar CMOS) technology, which aims at a high‐speed, highly integrated LSI by combining the microstructured CMOS and high‐speed bipolar devices at the element level of the circuits. As the basic circuit, a RAM‐combined Hi‐BiCMOS circuit comparator is proposed, where the comparator logic is introduced into the sense amplifier of RAM. Applying the proposed circuit, TLB (Translation Lookaside Buffer) is designed and constructed, which performs the address transformation by cache memory. A satisfactory operation of the circuit was verified with the address conversion time of 13.3 ns. An evaluation by simulation was made for applying the proposed circuit to a 4K Byte cache memory, and it is indicated that the cache access through an address conversion can be ma
ISSN:8756-663X
DOI:10.1002/ecjb.4420720901
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1989
数据来源: WILEY
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2. |
Steady‐state analysis of electromagnetic field by vertical electrical dipole over lossy ground |
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Electronics and Communications in Japan (Part II: Electronics),
Volume 72,
Issue 9,
1989,
Page 10-20
Satoshi Ichikawa,
Takashi Karasudani,
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摘要:
AbstractThe lightning discharge effect is shown by a model in which a lightning current climbs to a lightning cloud from the ground. The electromagnetic field induced at the observation point is the integration of the contribution due to an infinitesimal vertical dipole placed on the discharge path integrated along the path from the ground surface to the height of the cloud. When the conductivity of the ground is taken into account, the expression of the electromagnetic field due to the infinitesimal electric dipole contains a term given by a complicated infinite integral called the Sommerfeld integral that includes the Bessel function. For a wave source with an isolated waveform lasting for a short period of time such as the lightning discharge current, the frequency components exist over a broad range. Hence, in the analysis of the transient electromagnetic field by the lightning discharge, the frequency changes significantly with the source location. As a result, the behavior of the integrand in the Sommerfeld integral changes significantly. This paper treats a case in which the wave source varies sinusoidally so that the transient analysis is anticipated and a useful result is obtained for the steady state. To this end, the analysis of the electromagnetic field induced by a vertical electric dipole on the lossy ground is described with special attention given to the numerical processing of the Sommerfeld integral.
ISSN:8756-663X
DOI:10.1002/ecjb.4420720902
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1989
数据来源: WILEY
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3. |
Influence of the Ta migration on dielectric properties of anodized Al‐Ta(N)‐Al trilayered oxide films |
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Electronics and Communications in Japan (Part II: Electronics),
Volume 72,
Issue 9,
1989,
Page 21-28
Tsuyoshi Dobashi,
Toshiji Umezawa,
Katsutaka Sasaki,
Atsushi Noya,
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摘要:
AbstractA trilayered dielectric thin‐film capacitor with an A1‐A12O3‐Ta2O5(N)‐A12O3‐A1 structure was formed by anodizing a trilayered thin‐film, A1‐Ta(N)‐A1, deposited by RF diode sputtering. During the anodization procedure, Ta migrates into the aluminum oxide layer. The effect of Ta migration on the stoichiometry of the aluminum oxide was investigated by AES/XPS analysis before and after heat treatment. The results of the analysis showed that the migrated Ta's were in metallic and oxide states. However, the majority of the migrated Ta was in the metallic state, while the majority of A1 was in an oxide state. When the sample was heat treated in air at 300°C, oxidization of A1 progressed, but Ta tended to be reduced. Therefore, when a capacitor with a thick Ta film is heat treated, tanδ increases. If the thickness of the Ta layer is chosen properly, the stoichiometry of the A1‐oxide improves, resulting in a low t
ISSN:8756-663X
DOI:10.1002/ecjb.4420720903
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1989
数据来源: WILEY
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4. |
Finite‐element formulation of quantum wells using transfer matrix |
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Electronics and Communications in Japan (Part II: Electronics),
Volume 72,
Issue 9,
1989,
Page 29-38
Kenji Nakamura,
Akira Shimizu,
Masanori Koshiba,
Kazuya Hayata,
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摘要:
AbstractWhen the effective mass approximation is used for analysis of electrons bound in a quantum well, the envelope function generally is not continuous at the heterojunction. The boundary condition at the junction is expressed in terms of the transfer matrix. In this paper, an analysis method based on the finite‐element formulation is proposed for electrons bound in a quantum well made of arbitrary materials. It is shown that by using 3rd‐order Hermitian line elements as the approximation functions, the continuities of the envelope function and its derivative are ensured outside the heterojunction, and that introduction of the transfer matrix becomes possible. It is also shown that the problem becomes an asymmetric generalized eigenvalue problem by means of this formulation. As numerical examples, rectangular quantum wells are analyzed in the cases where the envelope function, and its derivative divided by the effective mass, are continuous at the heterojunction (GaAs/A1GaAs quantum well) where also the function and its derivative are discontinuous (InAs/GaSb quantum well). The validity of the calculations is confirmed by comparison with the analytical soluti
ISSN:8756-663X
DOI:10.1002/ecjb.4420720904
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1989
数据来源: WILEY
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5. |
Direct butt coupling type of LED module with multiple output fibers |
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Electronics and Communications in Japan (Part II: Electronics),
Volume 72,
Issue 9,
1989,
Page 39-47
Tadasu Sunada,
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摘要:
AbstractWith regard to domed LEDs, this paper describes an LED module with multiple output fibers arranged radially around a source using a direct butt coupling system. It is found that the optical coupling efficiency is improved by tilting the fiber so that it is oblique to the source. This is done also for the direct butt coupling LED module without lens, and an optimum module structure is established using this coupling method. A detailed analysis is carried out on the fiber coupling efficiency for domed LEDs with various active layer depthsd, and the optimum active layer depth to realize multiple and high outputs is estimated to bedO= ∼ 45 μm considering the SiO2insulating layer. A fabricated LED module with ten output fibers using a domed LED (dome radius of 200 μm) with the depth ofd= 45 μm, gives a high optical power of about 120 m in each f
ISSN:8756-663X
DOI:10.1002/ecjb.4420720905
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1989
数据来源: WILEY
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6. |
Current‐voltage characteristics of all‐NbN nanobridges |
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Electronics and Communications in Japan (Part II: Electronics),
Volume 72,
Issue 9,
1989,
Page 48-55
Zhen Wang,
Katsuyoshi Hamasaki,
Tsutomu Yamashita,
Toshiaki Matsui,
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摘要:
AbstractAll‐NbN nanobridges were developed for the thin‐film Josephson mixer in an integrated receiver for the detection of electromagnetic radiation. The transport mechanism of dc current and the product of the critical current‐normal state resistance were evaluated. As a result, it was found that when the thickness of an NbN film at the bridge section was (5 ∼ 7) ζ, bulk‐like non‐Josephson currents, which make the mixer design and operation analysis difficult, were superimposed on the critical current. The value of the non‐Josephson current was evaluted quantitatively by measuring the magnetic field dependence of the critical current. The non‐Josephson current due to the three‐dimensional effect of the current flowing through the bridge section was removed by Ar‐ion thinning of the NbN film at the bridge section. TheIJRNproduct was evaluated by using the true
ISSN:8756-663X
DOI:10.1002/ecjb.4420720906
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1989
数据来源: WILEY
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7. |
A proposal for polynomial transformer and its design using 3‐D VLSI technology |
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Electronics and Communications in Japan (Part II: Electronics),
Volume 72,
Issue 9,
1989,
Page 56-64
Takakazu Kurokawa,
Hideo Aiso,
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摘要:
AbstractAny relationship among finite fields, or Galois fields, can be transformed into a unique polynomial consisting of one variable using Galois Fields. In this paper, the 3‐D design of the “Polynomial Transformer” which executes this transformation is discussed.The Polynomial Transformer consists of very simple and iterative logic, and it is very suitable for parallel and pipelined VLSI implementation. Moreover, it is possible to transform 3‐D construction. From the 2‐D and 3‐D layout result of the Polynomial Transformer, it appears that 3‐D construction is effective.Some applications of the Polynomial Transformer are substitution in cipher, random number generation, and hashing which is use
ISSN:8756-663X
DOI:10.1002/ecjb.4420720907
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1989
数据来源: WILEY
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8. |
Three‐dimensional electromagnetic analysis of a vacuum window involving waveguides |
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Electronics and Communications in Japan (Part II: Electronics),
Volume 72,
Issue 9,
1989,
Page 65-76
Hirotaka Nakatsuka,
Norinobu Yoshida,
Ichiro Fukai,
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摘要:
AbstractLocal heating of the pillbox‐type vacuum window employed in microwave heating of nuclear fusion apparatus TOKAMAK has been a problem when used under a high power, particularly under the ghost mode. This factor is used to determine the maximum power of the heating system. However, in the measurement in actual operation, only the electric field can be measured when the amplitude and reflection coefficient become small due to the loss. An analysis taking into consideration the dielectric loss is needed to determine the characteristics of the electromagnetic field distribution in the ghost mode. We have applied the spatial network method to the pillbox vacuum window excited by a rectangular waveguide. The method has a number of unique features as a time domain analysis method for three‐dimensional electromagnetic fields. After the basic treatment is described, the electromagnetic field of the ghost mode is simulated by the analysis taking into consideration the dielectric loss. The effectiveness of the three‐dimensional electromagnetic analysis for the entire system is pres
ISSN:8756-663X
DOI:10.1002/ecjb.4420720908
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1989
数据来源: WILEY
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9. |
12‐GHz band triple‐mode filters with waveguide ports—comparison and consideration of two kinds of filter structures |
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Electronics and Communications in Japan (Part II: Electronics),
Volume 72,
Issue 9,
1989,
Page 77-85
Toshihiro Nomoto,
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摘要:
AbstractThis paper describes the design and development of triple‐mode filters which make possible compact size for use as 12 GHz band broadcast satellite transponder filters. Compared with dual‐mode filters, the realization of triple‐mode filters has further difficulty in controlling the resonant frequency and excitation of the degenerate modes, and in designing the intercavity iris. Two kinds of six‐pole triple‐mode filters which are different in mode‐coupling structures, are presented, and intercavity aperture shapes for each filter capable of a true elliptic function response are newly proposed in this paper. The experimental results showed that these two filters could exhibit almost equal electrical performance, and the proposed intercavity aperture shapes are widely available for controlling three pairs of mode‐couplings between two physical cavities simultaneously and independently. Finally, consideration for application to waveguide manifold multiplexers are made from vario
ISSN:8756-663X
DOI:10.1002/ecjb.4420720909
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1989
数据来源: WILEY
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10. |
Development of Mo metallization process of AIN ceramic surfaces |
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Electronics and Communications in Japan (Part II: Electronics),
Volume 72,
Issue 9,
1989,
Page 86-95
Masaaki Takahashi,
Kazuji Yamada,
Takahiko Oukouchi,
Kiyoshi Kanai,
Koichiro Kurihara,
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摘要:
AbstractTo utilize the highly thermally conductive aluminum nitride (AlN) ceramic as an insulating substrate for power semiconductor devices, molybdenum (Mo) metallization on the AlN ceramic was investigated. To metallize the AIN ceramic surface with Mo, the Mo paste and sintering methods, which are used to metallize the alumina surface, cannot be used because of the high purity of the AlN ceramic. Therefore, 10 to 15 wt% of glassified MnO‐SiO2(64 : 36 wt%) was added to the Mo paste as a sintering agent. To carry out sintering, the metallized AlN ceramic was heated at temperatures up to 900°C under forming gas (H2: N2) containing H2O vapor, and then heated at 1280 ∼ 1300°C under dry forming gas. The AlN ceramic metallized with Mo by the foregoing procedure had a heat resistance as low as 0.8 ∼ 1.3°C/W when the ceramic was inserted between a transistor and a Cu base. No change was observed in the heat resistance of metallized ceramic after 1000 therma
ISSN:8756-663X
DOI:10.1002/ecjb.4420720910
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1989
数据来源: WILEY
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