摘要:

AbstractA number of methods have been proposed forLCsimulation due to its inherent low sensitivity as a doubly terminated lossless reactance circuit [1 ‐ 8]. A direct simulation ofLis effective since it has a one‐to‐one correspondence with the circuit parameters and is applicable to cases other than filters. The method is advantageous over the passive inductance since the active device such as a transistor or an operational amplifier can simulate an inductance with a largeLvalue and a highQ.However, the noise is larger than that in a passive structure and hence reduction of noise is an important subject. This paper proposes a circuit which realizes a simulated low‐noise and high‐Qinductance with one transistor and one operational amplifier. In noise analysis, a low‐noise design is presented with the introduction of the noise factor. Further, the effect of imperfection of the active device on theLandQvalues, and the signal level in the circuit are discusse

ISSN:8756-663X    

DOI:10.1002/ecjb.4420721101

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1989

数据来源: WILEY

摘要:

AbstractCrystal oscillator circuits have been used widely in such electronic equipment as communication devices and measurement instruments. However, until the crystal is connected, usually it is uncertain if the circuit oscillates or it is difficult to determine how one adjusts the circuit for a desired oscillation frequency. With a view to alleviating these situations and improving the design method for the crystal oscillator circuits, a method is developed for accurately measuring with a bridge the two‐terminal impedance (equivalent series capacitance and negative resistance) of the active circuit seen from the connecting terminal of the crystal. A bridge measurement method for the small‐signal negative resistance related to the starting characteristics of the oscillator is discussed. In conjunction with the bridge measurement developed earlier for large signal operations under oscillation, a complete bridge measurement has become possible from the small signal region to the large signal region. The present bridge measurement method is useful in providing a basic specification for the active circuit side for a given crystal. It is also shown that the present bridge method is useful for evaluation of accuracy of other measurement instruments such as impedance analyz

ISSN:8756-663X    

DOI:10.1002/ecjb.4420721102

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1989

数据来源: WILEY

摘要:

AbstractThis paper considers the recent requirement for high‐density packaging technology and discusses the high‐density wiring technique for the Multiwire board. A proposal is made for the wiring rule as well as the fundamental manufacturing processes, which can realize twice higher wiring density compared with the traditional method. The Multiwire wiring employing the insulated wires as conductor can realize the wire crossings on the same plane. However, the technique has the following problem. When thin wire is used and the wiring pitch is reduced to realize a high‐density wiring, the strength of the wire is reduced, its adhesion to the board is degraded, and an interference with the adjacent wire due to stylus is produced. Then there are dangers of producing such defects as wire breakage, floating wire, position shift and flaws in a wire insulator. Those phenomena place a limit on the high‐density implementation by reduciong of the wiring pitch. From such a viewpoint, the diagonal wiring is newly utilized positively, leading to the wire breakage prevention at three or four wire crossovers which has a high breakage probability. Based on the estimation of the number of terminals and the terminal pitch of the LSI package in the future, the required wiring density is calculated. The industrially practical accuracy is assigned to the manufacturing processes, and considering those situations, the high‐density wiring rules are discussed. As a result, the following wiring rules are derived. The through‐holes are located by a 2.54‐mm grid and at the center, and eight passings (five orthogonal plus three diagonal) in a 2.54‐mm grid can be made as the highest wiring density. In addition, some intermediate wiring rules for five, six and seven passings are also presented. An example is shown in which the new wiring rule is applied to the product based on those

ISSN:8756-663X    

DOI:10.1002/ecjb.4420721103

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1989

数据来源: WILEY

摘要:

AbstractIt is important from the viewpoint of increasing the application range of the three‐dimensional circuit to construct analog circuits such as A/D converters on a silicon substrate formed on an insulating oxide film, or silicon on insulator (SOI) devices. Analog devices on a silicon on sapphire (SOS) substrate have been reported. However, no work on analog circuits has been reported with conventional SOI technology because of the lack of uniformity of the transistor characteristics. Due to the substrate floating effects represented by the kink phenomena characteristic to the configuration, the characteristics of the analog device are degraded. The laser recrystallization technique is improved and the chopper‐type comparator is used which is less susceptible to the variations of the device parameters. Furthermore, a transistor structure that suppresses the kink phenomena is introduced in the amplifier inverter. With these approaches, a 4‐bit flash A/D converter is fabricated successfully with the SOI/CMOS process. As a result, the basic operation is confirmed up to the power supply voltage of 5 V, input signal of 10 kHz, and conversion speed of 30 MS/s. In this paper, the design and evaluation are described for the SOI/CMOS A/D converter for three‐dimensional c

ISSN:8756-663X    

DOI:10.1002/ecjb.4420721104

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1989

数据来源: WILEY

摘要:

AbstractDischarge‐excited KrF excimer lasers with wavelength of 248 nm are expected to be useful as a light source for microlithography of 64‐Mbit DRAM. This paper reports on a high‐repetition‐rate UV preionized discharge‐excited KrF excimer laser with a new capacitor‐transfer‐circuit configuration in which peaking capacitors are buried in the wall of the laser vessel. This KrF laser delivers a high efficiency of 4 percent, a high average power of 150 W at 600 Hz, and a high‐repetition rate of 700 Hz. The gas lifetime has been confirmed to exceed 3 × 106shots without a gas purifier.This paper also discusses oscillation efficiency, high‐repetition rate operations and the gas lifetime for KrF excimer lasers with an ultraviolet (UV) automatic preionization and a capacitor‐transfer circuit. It has been confirmed that long gas lifetime and high‐repetition rate have been achieved due to the high

ISSN:8756-663X    

DOI:10.1002/ecjb.4420721105

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1989

数据来源: WILEY

摘要:

AbstractA two‐dimensional scattering problem of electromagnetic waves is analyzed by two conducting plates which are arranged arbitrarily through the problem formulation utilizing the mutual fields. The formulation based on the representation of the scattered fields by one plate is shown. The scattered waves were represented by solving simultaneous Wiener‐Hopf equations which are satisfied by every scattered field. By using the saddle‐point method, their approximate solutions and diffraction patterns in a far field are calculated, and the results are compared with numerical results by other methods. Using the present formulation, it was possible to solve scattering for a system of conducting plates considering multiply scattered waves when the edges of the plates are separated at least one wavelength for two plates with greatly different yet finite w

ISSN:8756-663X    

DOI:10.1002/ecjb.4420721106

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1989

数据来源: WILEY

摘要:

AbstractCoCr alloy thin films considered useful for perpendicular magnetic recording media and films deposited by vacuum evaporation and sputtering have been evaluated. In this study, a CoCr was vacuum‐deposited on Ge underlayers to prepare preferentially oriented films in thec‐axis direction. The influences of the thermal and pressure treatments on the magnetic properties were investigated. The influences of thermal and pressure treatments on the remanence magnetization where the magnetization was carried out in one direction normal to the film surface and the perpendicular magnetic recording were also investigated. As a result, it was found that the thermal treatment at a temperature higher than the deposition temperature reduced the saturation magnetization and increased the perpendicular coercivity and perpendicular magnetic aniso‐tropy. The amount of these changes was greater for the films deposited at lower substrate temperature which had smaller coercivity values. The changes in the magnetic properties were thought to be due to the Cr diffusion during heat treatment. On the other hand, during the pressure treatment, no change in the magnetic properties was observed. The decrease of magnetization due to the thermal treatment was smaller when a film was recorded perpendicularly magnetic than when it was magnetized in one direction perpendicular to the film surface. The decrease of the magnetization was smaller as the recording density increased. In the pressure treatment, the remanence magnetization where magnetization occurred in one direction decreased monotonically as the applied pressure increased. On the other hand, when the perpendicular magnetic recording was carried out on films, less decrease in magnetization was obs

ISSN:8756-663X    

DOI:10.1002/ecjb.4420721107

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1989

数据来源: WILEY

摘要:

AbstractThis paper describes the fabrication technique of a longitudinal magnetic recording film by the electroless plating method. When 1 percent Mn is codeposited in Co‐P film, coercivity of 12.0 × 104A/m (1500 Oe) could be achieved if the film is thicker than 0.05 μm. Furthermore, this high coercivity is also observed in a film as thick as 10 μm. The high coercivity is thought to be due to Mn(OH) formed in the deposition bath and which segregates at the grain boundaries of the film. Moreover, not only does it magnetically isolate each grain but also inhibits the lateral growth of grains during film gr

ISSN:8756-663X    

DOI:10.1002/ecjb.4420721108

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1989

数据来源: WILEY

摘要:

AbstractIn an MIS device composed of a transparent electrode, amorphous silicon nitride insulator, and hydrogenated amorphous silicon, optically induced degradation in the optical current characteristic was observed after optical irradiation at an intensity of 2000 1x. This degradation was strongly dependent on the material used for the transparent electrode. The highest degradation was observed when ITO was used. However, when a Pt electrode was used, no degradation was observed even after optical irradiation for 100 hr. The degradation was lowered by coating the surface of the ITO electrode with a thin Pt film.A change in the optical current due to the difference in the optical bandgap of the silicon nitride used as a thin insulating layer was not observed. However, as the optical bandgap of the silicon nitride increased, the threshold voltage for theI‐Vcharacteristic under illumination tended to shift to the higher voltage.It was concluded from the experimental result that the characteristics of an MIS device are strongly dependent on the transparent electrode. Therefore, special care must be taken in the fabrication of the transparent electrode, and coating the electrode with a thin Pt film is an effective way to stabilize the device. The amorphous silicon nitride film should be of high quality and as thin as possible to minimize the optically induced degradatio

ISSN:8756-663X    

DOI:10.1002/ecjb.4420721109

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1989

数据来源: WILEY

摘要:

AbstractA Gunn oscillator is developed using a nonradiative dielectric waveguide which is employed in millimeter‐wave integrated circuits. First, the structure and operation mechanism of the oscillator are described. The test of the oscillating properties shows the possibility of determining its frequency, and the maximum output power can be compared to that of the waveguide oscillators. Then a self‐injection locked Gunn oscillator using a dielectric resonator is developed for frequency stability and noise reduction. It is found that a TEQ2δmode high‐dielectric ceramic resonator gives the best results when installed, and the oscillator was proved to be practical by measured performances which show the pushing figure and temperature coefficient as 1 MHz/V and ‐5 ppm/°C, res

ISSN:8756-663X    

DOI:10.1002/ecjb.4420721110

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1989

数据来源: WILEY