|
1. |
Optogalvanic effect on a hollow cathode He—Cd+laser |
|
Electronics and Communications in Japan (Part II: Electronics),
Volume 72,
Issue 5,
1989,
Page 1-7
Akira Fuke,
Katsuhiko Masuda,
Yasuhiro Tokita,
Preview
|
PDF (486KB)
|
|
摘要:
AbstractA hollow cathode He—Cd+laser simultaneously emits three primary colors. Therefore, a white color laser beam is emitted from this laser. This paper describes the optogalvanic effect and the results of our measurements under the study of stabilization of the white light laser. In the measurement, the colors red, green or blue were monochromatically emitted and the change of the anode voltage was measured in accordance with laser optical power by turning the optical path in the resonator on and off. The optogalvanic signal was noticeable when the color red or blue was emitted. However, almost no effect was observed during emission of the color green. The optogalvanic signal during emission of the color blue depends not only on the optical intensity, but the beam diameter. This indicates that the optogalvanic signal during emission of the color blue is dependent on the change of the cathodic effect. On the other hand, the gain distribution of blue in the bore is presumed to reach the neighborhood of the cathode surface. During emission of red, the optogalvanic signal is proportional to the light intensity, regardless of the beam diameter. It is understood that the optogalvanic effect during red color emission is caused by the change of the He+population which is distributed at the center of the bore and is the origin of the red color emissio
ISSN:8756-663X
DOI:10.1002/ecjb.4420720501
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1989
数据来源: WILEY
|
2. |
Coupling characteristics of crossover arranged rectangular dielectric waveguides |
|
Electronics and Communications in Japan (Part II: Electronics),
Volume 72,
Issue 5,
1989,
Page 8-16
Kazuhito Matsumura,
Yoshiro Tomabechi,
Noriaki Tsuchiya,
Preview
|
PDF (621KB)
|
|
摘要:
AbstractThe coupling characteristics of two rectangular crossed‐over dielectric waveguides located on different parallel layers which presented a constant angle of intersection on a projection plane are analyzed. When two open waveguides were situated in proximity, each waveguide is mutually affected by the presence of other waveguide. Distributions of propagating modes in each waveguide were perturbed. This paper considers such perturbations using the authors' analysis method for a coupled system in a parallel arrangement. The coupled part is approximated by a step‐like approximation, and the dependence of the coupled electric power along each waveguide on the angle of intersection and the separation distance between upper and lower guides were clarified. Good agreement was obtained between calculated values and experimental measurements, in particular, the case of a tight coupling for a small separation distance between upper and lower waveguides and for the case of a large separation distance with a small angle of intersection with a long coupling part along the axial direction of the waveguides. This paper has improved greatly the authors' previous calculation results in which variational calculus was used on the assumption of a weak coupling. These results are considered to contribute to designing coupled circuits between upper and lower layers of integrated circuits for optical integrated circu
ISSN:8756-663X
DOI:10.1002/ecjb.4420720502
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1989
数据来源: WILEY
|
3. |
Preparation of superconducting thin films of a new oxide system by rf magnetron sputtering |
|
Electronics and Communications in Japan (Part II: Electronics),
Volume 72,
Issue 5,
1989,
Page 17-26
Kentaro Setsune,
Takeshi Kamada,
Kumiko Hirochi,
Hideaki Adachi,
Kiyotaka Wasa,
Preview
|
PDF (668KB)
|
|
摘要:
AbstractLa‐Sr‐Cu‐O, Y‐Ba‐Cu‐O, and Er‐Ba‐Cu‐O ceramic thin films are formed by rf magnetron sputtering and subsequent annealing. The sputtering condition, the crystallinity of the films and the superconductive characteristics of the films were evaluated. The composition of the films depended strongly on the partial pressure of oxygen in the sputtering gas, and the resistivity of the films depended on the total sputtering gas pressure. The crystallinity of the films depends on the substrate temperature during deposition and is not affected by post‐annealing. The preferential growth of films occurred on sapphire substrates heated up to the temperature of higher than 650°C in a [001] direction which is normal to the substrate. Even when Er is substituted for the Y element in the Y‐Ba‐Cu‐O system, the film can be prepared under conditions similar to that of d
ISSN:8756-663X
DOI:10.1002/ecjb.4420720503
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1989
数据来源: WILEY
|
4. |
Equivalent circuit analysis of performance of acousto—optic deflector using liquid—loaded interdigital transducer |
|
Electronics and Communications in Japan (Part II: Electronics),
Volume 72,
Issue 5,
1989,
Page 27-36
Kohji Toda,
Heijiro Urabe,
Preview
|
PDF (629KB)
|
|
摘要:
AbstractAn acoustic wave can be generated in a liquid by operating an interdigital transducer (IDT) at a solid‐liquid interface. This paper describes the operation characteristics of an optical deflector in which the acoustic wave thus generated is used as a grating. By representing the admittance characteristics of the IDT as a function of the relative acoustic impedance of the liquid used as a load, the evaluation of the electroacoustic conversion efficiency and the characteristics as an AO device is simplified. By means of a broadband IDT with chirped electrodes, an acoustic diffraction grating is formed in water. Investigations of the characteristics as an acousto‐optic deflector reveal excellent results in diffraction efficiency, deflection bandwidth and resolution num
ISSN:8756-663X
DOI:10.1002/ecjb.4420720504
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1989
数据来源: WILEY
|
5. |
Analysis of the light—beam scattering and the sum and differential signal output by arbitrarily shaped pits and bosses |
|
Electronics and Communications in Japan (Part II: Electronics),
Volume 72,
Issue 5,
1989,
Page 37-47
Yuji Funabiki,
Toshitaka Kojima,
Preview
|
PDF (703KB)
|
|
摘要:
AbstractWhen the boundary element method is applied to an electromagnetic scattering problem in an open region, an infinite integral must be carried out if the scatterer has an infinite extent. If the incident wave is a beam wave, it exists in a narrow region centered around the illuminated region. However, although the surface current excited by this incident field decays quickly in the case of E‐wave incidence since the position is separated from the illuminated region, it is distributed in a broad range in the H‐wave incidence. In this paper, a method for evaluating such an integral over a broad region is applied to the problem of scattering by arbitrarily shaped pits and bosses. It is demonstrated that an analysis for the H‐wave incidence can be done with the same accuracy for the E‐wave. In conventional analysis methods, substantial numerical errors are unavoidable for the H‐wave case. In addition, an analysis is carried out for the output signal characteristics for the hypothetical signal detection system of an optical disk. A detailed study is carried out as to how the sum and difference signal output by rectangular trapezoidal and V‐shaped pits and bosses depend on the shape and dimensions of the pit and boss or the off‐axis shift (tracking misalignment) of the incident beam and the shift
ISSN:8756-663X
DOI:10.1002/ecjb.4420720505
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1989
数据来源: WILEY
|
6. |
Amorphous—silicon thin—film transistors and their integrated circuits |
|
Electronics and Communications in Japan (Part II: Electronics),
Volume 72,
Issue 5,
1989,
Page 48-60
Yasutaka Uchida,
Shunri Oda,
Masakiyo Matsumura,
Preview
|
PDF (930KB)
|
|
摘要:
AbstractSince the technology to integrate amorphous‐silicon thin‐film transistors on a large area glass substrate is a key to realizing a flat panel display with high capacity, high resolution, and full color, it has been developed extensively in industry research organizations worldwide. Attempts have also been made to apply them for sensing devices and printing devices. The amorphous‐silicon thin‐film transistor is becoming central to man‐machine interface devices, and the improvement of its performance has become important. This paper introduces these technological trends with emphasis on our own researc
ISSN:8756-663X
DOI:10.1002/ecjb.4420720506
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1989
数据来源: WILEY
|
7. |
Two—dimensional ray tracing for wavefronts, wave—normal rays and geometrical optics fields |
|
Electronics and Communications in Japan (Part II: Electronics),
Volume 72,
Issue 5,
1989,
Page 61-68
Masahiro Hashimoto,
Akira Komiyama,
Preview
|
PDF (533KB)
|
|
摘要:
AbstractA method is described for constructing geometrically the two‐dimensional electromagnetic wave in an inhomogeneous anisotropic medium. An example of application is also shown. Since the basic theory has already been reported, an application algorithm is described here in detail. Especially, the geometrical optics field at an arbitrary time is traced numerically after the initial shape of the wavefront and the initial intensity profile of the electromagnetic field are given. In the example, a uniaxial anisotropic medium with a weak inhomogeneity is assumed and the initial intensity profile of the geometrical optics field is taken Gaussia
ISSN:8756-663X
DOI:10.1002/ecjb.4420720507
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1989
数据来源: WILEY
|
8. |
Transient analysis of three—dimensional electromagnetic field in through—holes |
|
Electronics and Communications in Japan (Part II: Electronics),
Volume 72,
Issue 5,
1989,
Page 69-80
Naoki Masuzuka,
Norinobu Yoshida,
Ichiro Fukai,
Preview
|
PDF (831KB)
|
|
摘要:
AbstractThrough‐holes are attached to numerous structures in mutual connections of electronic devices, printed circuit boards which provide supporting functions, multilayer wires of LSI, and external connections of IC packages. With the recent uses in superhigh‐frequency waves in superminiaturized circuits, the influences of through‐holes on the propagation characteristics are becoming increasingly nonnegligible. To understand the characteristics of the total system, analyses of through‐holes have become indispensable. However, through‐holes generate complicated distributions of electromagnetic fields due to their three‐dimensional structures. Thus, it is necessary to perform rigorous vectorial analyses for three‐dimensional fields using all field components, boundary conditions, and properties of the medium.Hence, for analysis of through‐holes, we applied the method of spatial networks. These networks have many features for analyses of electromagnetic fields in obtaining time responses of the three‐dimensional fields. We simulated their basic field behaviors, and obtained transmitted output waves which provide an important influence of a through‐hole on characteristics of high‐speed pulse operations and reflected wave shapes toward the input terminals. We determined the frequency characteristics of those wave shapes by fast Fourier transforms, and clarified the effectiveness of the application of the pr
ISSN:8756-663X
DOI:10.1002/ecjb.4420720508
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1989
数据来源: WILEY
|
9. |
Preparation and magnetic properties of anodic oxide magnetic films |
|
Electronics and Communications in Japan (Part II: Electronics),
Volume 72,
Issue 5,
1989,
Page 81-88
Ken Ichi Arai,
Yohsuke Ohoka,
Yukio Wakui,
Preview
|
PDF (565KB)
|
|
摘要:
AbstractTheM‐Hcurve, coercive force and magnetic anisotropy of magnetic anodic oxide films containing electro‐deposited iron particles in pores were measured for the various pore diameters between 150 and 1200 Å, packing densities between 0.13 ‐ 0.48 and film thicknesses between 0.08 and 1.3 μm. As a result, it was found that the coercive force perpendicular to the film surface depends only on the pore diameter when the length of the iron particle is 15 times larger than its diameter, and that it decreases in inverse proportion to the square of the pore diameter when the pore diameter is larger than 350 Å. This indicates that the mechanism of magnetization reversal in these films follows the curling mode. The coercive force parallel to the film surface is affected by the shape of the initially deposited iron particles. The magnetic anisotropy depends strongly on the packing density of the iron particles. When the packing density is less than 0.32, the direction perpendicular to the film surface is the direction of easy magnetization. When the packing density is higher than 0.32, the direction parallel to the film surface is the direction of easy magne
ISSN:8756-663X
DOI:10.1002/ecjb.4420720509
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1989
数据来源: WILEY
|
10. |
Relationship between the contact resistance and the temperature near electrical contacts switching continually |
|
Electronics and Communications in Japan (Part II: Electronics),
Volume 72,
Issue 5,
1989,
Page 89-96
Takayoshi Kubono,
Shinji Teraoka,
Preview
|
PDF (551KB)
|
|
摘要:
AbstractThe temperature increase of electrical rays is regulated by the electrical component regulatory law. There are few examples of measurement of temperature characteristics during the multiple open and close operations at the electrical contact of a small relay. In this paper, the resistive load circuit of dc 30 V to 10 A was open for 2 s and closed for 1 sa total of 100,000 times. During each closing period, the contact resistance, the temperature near the electrical contact, the temperature of the interior wall of the relay case, and room temperature were measured and correlated. The temperature near the electrical contact depends strongly on the contact resistance and increases or decreases with several cycles of delay in the open and close cycle for the increase and decrease of the contact resistance. The contact resistance for 1000 continuous measurements and the average of the temperature increase (difference between the temperature near the electrical contact and the room temperature) are proportional to the correlation factor of more than 0.95. When the temperature increases between the contacts with and without through‐holes are compared, it is seen that the increase due to thermal radiation was smaller at the through‐hole when the contact with through‐holes is used. From these experimental results, the typical temperature characteristics of the electrical contact as a principal functional device were clar
ISSN:8756-663X
DOI:10.1002/ecjb.4420720510
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1989
数据来源: WILEY
|
|