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1. |
Memory macrocell techniques for 1‐V battery‐operated ASICs |
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Electronics and Communications in Japan (Part II: Electronics),
Volume 79,
Issue 10,
1996,
Page 1-12
Nobutaro Shibata,
Shigeru Date,
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摘要:
AbstractLow‐power ASICs with a single Ni‐Cd battery cell are necessary to implement small, lightweight.and economical portable equipment. This paper describes SRAM and mask‐ROM macrocell techniques for 1‐V battery‐operated ASICs. Synchronous specification combined with pipeline technique is employed to enhance the performance of maximum operating frequency.Six‐transistor CMOS SRAM cells are realized by using high threshold‐voltage (VTH) MOSFETs to reduce the power dissipation due to the subthreshold leakage current. Peripheral circuitry is designed with multi‐threshold‐voltage CMOS (MTCMOS) technology, which is implemented by using high‐ and low‐VTHMOSFETs. A test chip including several memory macrocells is fabricated with 0.5‐μm MTCMOS technology, and the macrocell demonstrated 30‐MHz opera
ISSN:8756-663X
DOI:10.1002/ecjb.4420791001
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1996
数据来源: WILEY
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2. |
Equalization of the coupling loss of LD array modules for an optical frequency multiplexed communications system |
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Electronics and Communications in Japan (Part II: Electronics),
Volume 79,
Issue 10,
1996,
Page 13-21
Shinichi Kaneko,
Akihiro Adachi,
Junichiro Yamashita,
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摘要:
AbstractThis paper proposes a method of equalizing the coupling loss among different channels of liquid display (LD) arrays. In this method, a second lens is used to adjust the image points to the fiber positions, which then are aligned and the coupling losses among channels are equalized. In addition, the compensation for misalignments is achieved by changing the position of the second lens. This is made possible by the dependency of the angle of the output light ray on the object height. As a result, the requirements with respect to the distortions of the optical system are relaxed by half and the module‐yield with coupling loss fluctuations in the range of ±0.5 dB is improved by about three tim
ISSN:8756-663X
DOI:10.1002/ecjb.4420791002
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1996
数据来源: WILEY
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3. |
Tracing of the Poynting flux in a Stratified Absorbing Medium: The Geometrical Optics Field |
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Electronics and Communications in Japan (Part II: Electronics),
Volume 79,
Issue 10,
1996,
Page 22-31
Shinobu Tokumaru,
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摘要:
AbstractThis paper presents a method for tracing the flux line and Poynting flux amplitude in a geometrical optics field in relation to the circularly polarized absolute value ray when a plane wave is incident on a planar nondis‐persive layered lossy medium. For projected flux flow lines that are the projection of the Poynting flux flow lines onto the wavefront normal plane, it is shown that Format's principle holds for the projection flux flow lines if an anisotropic index of refraction of the projected flow lines related to the excitation method of the plane wave and dependent on the amplitude is introduce
ISSN:8756-663X
DOI:10.1002/ecjb.4420791003
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1996
数据来源: WILEY
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4. |
Analysis of nonreciprocal mode‐conversion properties of magnetooptic channel waveguides using the finite element method |
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Electronics and Communications in Japan (Part II: Electronics),
Volume 79,
Issue 10,
1996,
Page 32-39
Xiu‐Ping Zhuang,
Masanori Koshiba,
Yasuhide Tsuji,
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摘要:
AbstractTo evaluate nonreciprocal mode conversion characteristics in a magnetooptic channel waveguide, a finite dement analysis based on the scalar wave approximation is formulated for the first time. A simple iterative calculation method is conceived for solution of the nonlinear eigenvalue equations finally obtained in which the two polarizations are coupled. Specifically, the maximum isolation ratio in the mode‐conversion‐type magnetooptic rib guide was evaluated and the validity of the method is confirmed by comparison with published experimental resu
ISSN:8756-663X
DOI:10.1002/ecjb.4420791004
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1996
数据来源: WILEY
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5. |
Television wave‐receiving system using optical modulator |
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Electronics and Communications in Japan (Part II: Electronics),
Volume 79,
Issue 10,
1996,
Page 40-48
Kazuhisa Hayeiwa,
Hisashi Naka,
Yoshikazu Toba,
Yoshiro Sato,
Yuichi Tokano,
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摘要:
AbstractA signal transmission system for a television (TV) relay station was developed and tested by using an optical intensity modulator (without a power supply), in which the intensity of the transmitted optical wave varies in response to a weak RF signal. If this system is used, an optical fiber can be used as a transmission line; the receiving station does not require a power supply. Because the transmitting and receiving stations can be fully isolated electrically, significant benefit is gained by protecting the system from lightning. As the receiving station can be constructed with solely passive components, reliability, and maintainability can be improved and cost can be lowered. In the present system, the sensitivity of the optical modulator was unproved by the use of a reflection‐type design/Voltage amplification by resonance was realized. Even at a low electric field of 60 dBμV/m, aC/Nof more than 50 dB was obtained. The differential gain (DG) was 1.8 percent and differential phase (DP) was 1.
ISSN:8756-663X
DOI:10.1002/ecjb.4420791005
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1996
数据来源: WILEY
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6. |
Vector basis functions in mixed‐potential integral equation method |
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Electronics and Communications in Japan (Part II: Electronics),
Volume 79,
Issue 10,
1996,
Page 49-55
Masanori Matsuhara,
Tuptim Angkaew,
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摘要:
AbstractThe mixed potential integral equation (MPIE) is one of the principal numerical analysis methods used for the computer‐aided design of microwave and millimeter‐wave integrated circuits. In this paper, a systematic method for constructing the vector basis functions used in the MPEE is described and application examples are presented. A systematic technique for constructing the first‐ and second‐order vector basis functions is presented. This method is applied to the MPIE for numerical analysis of a patch antenna; the results demonstrate the validity and the effectiveness of the vector basis fu
ISSN:8756-663X
DOI:10.1002/ecjb.4420791006
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1996
数据来源: WILEY
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7. |
Development of a liquid crystal photo fabrication system |
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Electronics and Communications in Japan (Part II: Electronics),
Volume 79,
Issue 10,
1996,
Page 56-66
Masayuki Kimura,
Etsuo Kubota,
Nobuo Bessho,
Ichiro Fukuda,
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摘要:
AbstractReduction of fabrication and operational costs has become an important issue in today's laser scanning photo‐fabrication system. In this paper, a novel liquid crystal‐type photo‐fabrication system (LC‐PFS) that does hot require a laser will be proposed. It will be shown that this system is useful for three‐dimensional visualization of CAD and CT image data.In this study, the design indices for a double‐layered STN (DSTN) liquid crystal panel for electrically rewriting exposure mask were fust clarified by numerical analysis. Then the optimum design condition for the liquid crystal panel that maximizes the contrast ratio (hardening sensitivity corrected contrast) was experimentally obtained. Finally, a liquid crystal panel with a diagonal dimension of 11.4 inches and 1.9 × 105pixels was fabricated. Using LC‐PFS test equipment with the forementioned panel, a real‐sized skeleton was created to demonstrate the advantag
ISSN:8756-663X
DOI:10.1002/ecjb.4420791007
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1996
数据来源: WILEY
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8. |
Realization of high‐performance MOSFETs with gate lengths of 0.1 μm or less |
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Electronics and Communications in Japan (Part II: Electronics),
Volume 79,
Issue 10,
1996,
Page 67-78
Hisayo Sasaki Momose,
Mizuki Ono,
Takashi Yoshitomi,
Tatsuya Ohguro,
Masanobu Saito,
Hiroshi Iwai,
Shin‐Ichi Nakamura,
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PDF (801KB)
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摘要:
AbstractThe reduction of gate length improves the performance of a MOSFET. However, this is difficult to do when the gate length is less than 0.1 μm for numerous reasons.This paper reports the results of improvement of the MOSFET performance employing various means. It was found that the current drive was only 30 percent higher with a gate length of 40 nm than with a gate length of 0.1 μm. Even when the gate oxide was 1.5 nm, which is half the oxide thickness for a direct tunneling leakage limit, it was found that the MOSFETs operate normally and the current drive was 1.6 times higher than when the gate oxide was 3 nm, because of the increase of gate capacitance.When a low‐doped thin Si epitaxial layer was used as the intrinsic channel, the channel drive was improved by 20 percent because of higher carrier mobility, compared with the current‐driving efficiency of a MOSFET formed by bulk material. The problem of source drain parasitic resistance increase in small‐geometry MOSFETs was solved by using a novel device structure, i.e., S4D. Using this new structure, the parasitic resistance was reduced by one order of magnitude. Combining the aforementioned techniques, the current‐driving efficiency could be improved further even when the gate length is in the sub‐0.
ISSN:8756-663X
DOI:10.1002/ecjb.4420791008
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1996
数据来源: WILEY
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