1. |
The influence of bath composition on the photocurrent response and morphology of chemically deposited CdS thin films |
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Advanced Materials for Optics and Electronics,
Volume 1,
Issue 5,
1992,
Page 211-220
P. J. Sebastian,
P. K. Nair,
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摘要:
AbstractThe influence of the chemical bath composition on the photocurrent response, film morphology and optical transmittance of chemically deposited CdS thin films is reported. The bath parameters such as concentrations of triethanolamine, thiourea, ammonia and cadmium acetate and the bath temperature controlled the photosensitivity, photocurrent decay, morphology and optical transmittance of the films. The optimum concentration of the bath for getting good‐quality photosensitive films with good optical transmittance was identified in this investigatio
ISSN:1057-9257
DOI:10.1002/amo.860010502
出版商:John Wiley&Sons Ltd.
年代:1992
数据来源: WILEY
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2. |
A theoretical study of the hyperpolarisabilities of nickel dithiolene molecules |
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Advanced Materials for Optics and Electronics,
Volume 1,
Issue 5,
1992,
Page 221-228
B. I. Craig,
G. R. J. Williams,
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摘要:
AbstractThe hyperpolarisabilities γ of nickel dithiolene complexes have been calculated by the finite field method in combination with the CNDO/S molecular orbital method. This computational technique, which has been developed for calculating the polarisation of large organic molecules by a perturbing electric field, is discussed. The changes in γ that occur as a result of different selections of substituent groups in the dithiolene ligand are described. The results are compared with recent experiments investigating these types of molecules. Large values for γ are found to arise from the interaction of the nickel 3d electrons with the conjugated π‐electrons of the metal–ligand
ISSN:1057-9257
DOI:10.1002/amo.860010503
出版商:John Wiley&Sons Ltd.
年代:1992
数据来源: WILEY
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3. |
Metal–Organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin films |
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Advanced Materials for Optics and Electronics,
Volume 1,
Issue 5,
1992,
Page 229-233
Andrew N. Maclnnes,
William M. Cleaver,
Andrew R. Barron,
Michael B. Power,
Aloysius F. Hepp,
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摘要:
AbstractThe dimeric indium thiolate [(tBu)2In(μ‐StBu)]2has been used as a single‐source precursor for the metal–organic chemical vapour deposition (MOCVD) of InS thin films. The dimeric In2S2core is proposed to account for the formation of the non‐equilibrium high‐pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by transmission electron microscopy (TEM), with associated energy‐dispersive X‐ray analysis (EDX) and X‐ray photoelectron sp
ISSN:1057-9257
DOI:10.1002/amo.860010504
出版商:John Wiley&Sons Ltd.
年代:1992
数据来源: WILEY
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4. |
Mirrorless optical bistability in molecular aggregates with dipole–dipole interaction |
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Advanced Materials for Optics and Electronics,
Volume 1,
Issue 5,
1992,
Page 235-241
V. V. Gusev,
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摘要:
AbstractThe possibility of mirrorless optical bistability in molecular aggregates with dipole–dipole interaction was studied theoretically. Dimers and ordered layers of the Langmuir–Blodgett type or J‐aggregates consisting of identical polyatomic fluorescent molecules were chosen as molecular aggregate models. The investigation was carried out on the basis of the Bogolubov equation chain for the density matrix of molecular aggregates and its components. It is shown that the fluorescence intensity and absorption ability are described by bistable and hysteresislike behaviour when the parameters of the molecular aggregate and pumping radiation are chosen suitably. An analysis of the bistability mechanism in such aggregates is given. Possibilities of controlling one light beam by another and switching polychromatic light flow by using a bistable device based on molecular aggregates are disc
ISSN:1057-9257
DOI:10.1002/amo.860010505
出版商:John Wiley&Sons Ltd.
年代:1992
数据来源: WILEY
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5. |
Second‐Order optical non‐linearities of {4‐(dimethylamino) stilben z&e 4'‐yl} dimesityl borane |
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Advanced Materials for Optics and Electronics,
Volume 1,
Issue 5,
1992,
Page 243-247
Minh Lequan,
Rose Marie Lequan,
Kathleen Chane‐ching,
Anne‐claude Callier,
Marguerite Barzoukas,
Alain Fort,
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摘要:
AbstractSamples of {4‐(dimethylamino) stilben Z&E 4'‐yl} dimesityl borane (BNS) were synthesised and investigated for their non‐linear optical properties. The results show that the quadratic hyperpolarisability of the Z‐isomer is smaller than that of the E‐isomer, the beta value found for the latter being as high as 60
ISSN:1057-9257
DOI:10.1002/amo.860010506
出版商:John Wiley&Sons Ltd.
年代:1992
数据来源: WILEY
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6. |
Ultralow‐Dielectric‐Constant foams by crystallisation from supercritical solution: Application to advanced electronic packaging |
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Advanced Materials for Optics and Electronics,
Volume 1,
Issue 5,
1992,
Page 249-253
P. Ehrlich,
D. J. Ehrlich,
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摘要:
AbstractAccurate moulding of polymer foams of density 0.02–0.3 g cm−3has been achieved by crystallising polyethylene and ethylene/methlacrylate copolymers from dry supercritical solutions. Adherent thick films can be sealed to electronic substrates and are proposed as insulating layers for interconnections on multichip modules and other high‐speed electronic devices. The dielectric constant achieved for films of several‐mil thickness is between 1.05 and 1.3 and can be tailored along with the physical properties of the film by adjusting the density and composition of the copolymer. Planarisation or complex patterning is possible by detailing th
ISSN:1057-9257
DOI:10.1002/amo.860010507
出版商:John Wiley&Sons Ltd.
年代:1992
数据来源: WILEY
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7. |
An investigation of LPCVD and PECVD ofin situdoped polycrystalline silicon for VLSI |
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Advanced Materials for Optics and Electronics,
Volume 1,
Issue 5,
1992,
Page 255-259
Waqar Ahmed,
Ejaz Ahmed,
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摘要:
AbstractIn general, high‐temperature processes cause thermal stresses and diffusion of dopants, resulting in reduced device yields. It is thus desirable to reduce the number of high‐temperature steps and the use of anin situdoping technique eliminates one such step. In this investigation, low‐pressure chemical vapour deposition (LPCVD) and plasma‐enhanced chemical vapour deposition (PECVD) have been utilised to depositin situdoped polycrystalline silicon films. The process characteristics and properties such as spreading resistance, grain structure, etch rate using a plasma and dopant concentrations of these films have been investigated and explained using a simple model for dopant activation and grain growth. It is shown that good‐quality films suitable for VLSI can be
ISSN:1057-9257
DOI:10.1002/amo.860010508
出版商:John Wiley&Sons Ltd.
年代:1992
数据来源: WILEY
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8. |
Announcement |
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Advanced Materials for Optics and Electronics,
Volume 1,
Issue 5,
1992,
Page 261-261
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ISSN:1057-9257
DOI:10.1002/amo.860010509
出版商:John Wiley&Sons Ltd.
年代:1992
数据来源: WILEY
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9. |
Masthead |
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Advanced Materials for Optics and Electronics,
Volume 1,
Issue 5,
1992,
Page -
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ISSN:1057-9257
DOI:10.1002/amo.860010501
出版商:John Wiley&Sons Ltd.
年代:1992
数据来源: WILEY
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