ISSN:1057-9257    

DOI:10.1002/(SICI)1099-0712(199603)6:2<53::AID-AMO232>3.0.CO;2-#

出版商:John Wiley&Sons Ltd.    

年代:1996

数据来源: WILEY

摘要:

AbstractThis review focuses on the evolution of a low‐temperature remote plasma‐assisted deposition process that has yielded device‐quality SiO2and SiO2‐Si3N4alloy thin films as defined by their performance in metal‐oxide‐semiconductor (MOS) devices. The evaluation of the dielectric films with respect to both the plasma deposition process and the device performance cannot be separated from (i) the pre‐deposition surface cleaning of the crystalline silicon (c‐Si) substrates and (ii) the way in which the Si‐SiO2interface is formed. As a consequence, we show that this approach for using plasma‐deposited SiO2films as gate dielectrics must of necessity combine (i) the final cleaning of the Si surface, (ii) the formation of the Si‐SO2interface and (iii) the deposition of the gate oxide or nitrided oxide film into anin‐situ integr

ISSN:1057-9257    

DOI:10.1002/(SICI)1099-0712(199603)6:2<55::AID-AMO226>3.0.CO;2-J

出版商:John Wiley&Sons Ltd.    

年代:1996

数据来源: WILEY

摘要:

AbstractSilicon dioxide films deposited from tetraethylorthosilicate (TEOS) using plasma‐enhanced chemical vapour deposition (PECVD) are reviewed. The effect of the presence of oxygen on the film deposition rate and mechanism and the physical properties of the films, particularly the step coverage properties (conformality), are discussed in detail. Structural characterisation of the films has been carried out via etch rate measurements, infrared transmission spectroscopy, X‐ray photoelectron spectroscopy (XPS) and Auger and secondary ion mass spectroscopy (SIMS) analysis. Electrical properties, i.e. resistivity, breakdown strength, fixed oxide charge density, interface state density and trapping behaviour, have been evaluated using metal‐oxide‐semiconductor (MOS) structures fabricated using the deposited oxides. Films deposited by microwave plasma‐enhanced decomposition of TEOS in the presence of oxygen have been found to be comparable with standard silane‐based low‐pressure chemical vapour deposition (LPCVD) and PECVD oxides. It has been shown that films deposited on thin native oxides grown by eitherin situplasma oxidation or low‐temperature thermal oxidation exhibit excellent electr

ISSN:1057-9257    

DOI:10.1002/(SICI)1099-0712(199603)6:2<73::AID-AMO215>3.0.CO;2-R

出版商:John Wiley&Sons Ltd.    

年代:1996

数据来源: WILEY

摘要:

AbstractSilicon oxide films have been deposited on silicon wafers at low temperature by irradiation of the substrates with an ArF (λ = 193 nm) excimer laser beam in a SiH4and N2O atmosphere. A systematic study of the growth rate and properties of the films as a function of the processing parameters (gas composition, substrate temperature, laser pulse energy, pulse repetition rate, total pressure and gas flow rate) has been performed. The process is photolytically activated in the gas phase and the diffusion of photodecomposed precursor species towards the surface plays an important limiting role. The N2O/SiH4ratio mainly controls the film composition; for ratios above 40, stoichiometric silica may be obtained, as confirmed by Rutherford backscattering (RBS) measurements. The role of the surface temperature in the growth kinetics is not critical, so that deposition of films is possible down to substrate temperatures as low as 70°C. Nevertheless, the density of the films varies greatly with the substrate temperature. The fact that no Si(SINGLE BOND)H vibration was detected with Fourier transform infrared (FTIR) spectrophotometry is surprising, since hydrogen incorporation is a very typical phenomenon encountered in most silane systems. This effect is probably associated with the ultraviolet photon irradiation of the adsorbed species and the film as it grows, thus breaking bonds and affecting the bond structure of the fil

ISSN:1057-9257    

DOI:10.1002/(SICI)1099-0712(199603)6:2<83::AID-AMO225>3.0.CO;2-P

出版商:John Wiley&Sons Ltd.    

年代:1996

数据来源: WILEY

摘要:

AbstractDeposition processes and film properties of plasma‐enhanced chemical vapour deposition (PECVD) films derived from fluoroalkylsilanes are described. The fluorinated silicon dioxide (FSG) films have lower dielectric constants (3.3–3.7) than non‐fluorinated silicon dioxide films (>4). With similar dielectric strengths, the reduced capacitance obtained with FSG films makes them useful as intermetal dielectrics (IMDs). The films are characterised using Fourier transform infrared spectroscopy, Auger electron spectroscopy, ellipsometry and capacitance‐voltage measurements. Characterisation of the changes in FSG upon exposure to ambient conditions and a method for stabilising the films are p

ISSN:1057-9257    

DOI:10.1002/(SICI)1099-0712(199603)6:2<93::AID-AMO231>3.0.CO;2-Z

出版商:John Wiley&Sons Ltd.    

年代:1996

数据来源: WILEY

摘要:

AbstractAn overview is presented of the chemical vapour deposition (CVD) of SiO2and related materials, together with a description of their application in metal‐oxide‐semiconductor (MOS) devices, including device isolation, gate insulation passivation and planarisation. A comparison of CVD methods and precursors is presented for SiO2as well as doped glasses, e.g. borosilicate glasses (BSG), phosphosilicate glasses (PSG), borophosphosilicate glasses (BPSG), and arsenosilicates glasses (As

ISSN:1057-9257    

DOI:10.1002/(SICI)1099-0712(199603)6:2<101::AID-AMO224>3.0.CO;2-J

出版商:John Wiley&Sons Ltd.    

年代:1996

数据来源: WILEY

ISSN:1057-9257    

DOI:10.1002/amo.860060208

出版商:John Wiley&Sons Ltd.    

年代:1996

数据来源: WILEY

ISSN:1057-9257    

DOI:10.1002/amo.860060201

出版商:John Wiley&Sons Ltd.    

年代:1996

数据来源: WILEY