摘要:

The m.n.o.s. transistor has gained widespread acceptance as a nonvolatile memory element. In the present paper, we examine the switching properties of the m.n.o.s. transistor by comparing the experimentally determined oxide injection current to theoretically calculated oxide currents. On basis of this investigation, we present some calculated curves from which the switching properties can be predicted for the range of gate voltages normally used for writing. Furthermore, it is shown that the switching properties at low gate voltages depend entirely on the trap density and distribution in the nitride. Usually, it is desirable to minimise the swtiching for low gate voltages. A discussion of the requirements that this imposes on the trap distribution is presented

DOI:10.1049/ij-ssed.1977.0018

出版商:IEE    

年代:1977

数据来源: IET

摘要:

A nondestructive contactless technique which allows high-resolution point-by-point measurement of minority carrier lifetime and diffusion length in silicon, without the need for special structures, is described. Excess carriers are generated at a known rate by a 1 mW He-Ne laser beam focused to a fine spot on the silicon surface. The resulting total carrier number, which is inversely proportional to the recombination time, is detected by a novel infra-red emission technique. Spatial variations of lifetime have been measured, and small regions of high recombination located. Many of these can be associated with oxidation-induced stacking faults. The diffusion length is measured directly by observing the variation of carrier concentration with distance away from the point of injection. The technique is applicable to other semiconductors, and will be particularly valuable where it is difficult to make electrical contact.

DOI:10.1049/ij-ssed.1977.0019

出版商:IEE    

年代:1977

数据来源: IET

摘要:

The large-signal characterisation of 2-terminal, solid-state oscillator devices operating in microwave circuits may be achieved using a technique for measuring the circuit admittance seen from the device chip. The method provides a means of making such a measurement with the minimum of assumptions, especially in respect of the encapsulation. Results are presented in the form of a 3-dimensional ‘device surface’ of the complex admittance as a function of frequency and r.f. amplitude.

DOI:10.1049/ij-ssed.1977.0020

出版商:IEE    

年代:1977

数据来源: IET

摘要:

An analytical large-signal model of a 2-cavityemission modulated microwave amplifier (a ‘femitron’) with a field-emission cathode has been developed. Typical gain, efficiency and power-output results are presented for anS-band device that is currently under development. Gain predictions are in good agreement with earlier published results, but efficiency estimates are less optimistic than have been suggested elsewhere.

DOI:10.1049/ij-ssed.1977.0022

出版商:IEE    

年代:1977

数据来源: IET

摘要:

Thermal interdiffusion in the Cr/Pt/Ag metallisation system used for silicon impatt diodes has been characterised using Rutherford backscattering of helium ions. Considerable interdiffusion, characterised by an activation energy of 0·5 eV, is observed in the Pt/Ag thin-film boundary, the Cr/Pt interface is found to be stable up to 400°C with practically no observable diffusion.

DOI:10.1049/ij-ssed.1977.0023

出版商:IEE    

年代:1977

数据来源: IET

摘要:

The required device structure for a fast avalanche photodiode is very similar to that of a good impatt diode, which suggests that conventional impatt technology may be used to produce goodquality very fast photodiodes. An experiment to demonstrate this propostion is reported.

DOI:10.1049/ij-ssed.1977.0024

出版商:IEE    

年代:1977

数据来源: IET

摘要:

Ion implantation is now often used to delineate the stripe geometry of laser diodes. This technique creates some defects and it is important to know the optical properties of the implanted zone. The refractiveindex increase produced by ion implantation in heavily doped material allows optical guiding. So, it is possible to measure the total optical losses of the implanted layer after different heat treatments.

DOI:10.1049/ij-ssed.1977.0025

出版商:IEE    

年代:1977

数据来源: IET