摘要:

A steady-state method for determining the excess carrier lifetime usingp-i-ndiodes is presented. The carrier lifetime is obtained from the r.f. resistance of a forward-biasedp-i-ndiode measured at microwave frequencies. The carrier lifetime obtained with this method in diffused siliconp-i-ndoides is compared with the carrier lifetime obtained from other usual methods of measurement.

DOI:10.1049/ij-ssed.1977.0007

出版商:IEE    

年代:1977

数据来源: IET

摘要:

The effects of depletion-capacitance-induced distortion in split-electrode surface-channel c.c.d. transversal filters are analysed. Two standard charge-inputting techniques (the ‘diode cut off’ and ‘fill and spill’ schemes) and the two usual tapping methods (voltage and current sensing) are considered. The analysis of each input-output combination is used to predict the performance of a lowpass c.c.d. filter. Ignoring charge partitioning, the diode-cut off scheme, in conjunction with current sensing, provides an overall response which is linear. If charge partitioning is significant, however, a filter employing a fill-and-spill scheme in conjunction with current sensing gives the least distortion.

DOI:10.1049/ij-ssed.1977.0008

出版商:IEE    

年代:1977

数据来源: IET

摘要:

The overall power efficiency of semiconductor heterostructure lasers operating well above threshold has been calculated in terms of the power output per unit widthP/W, the lengthl, the end reflectivityR, the absorption coefficient α and the conductivity per unit area σ. At currents sufficiently beyond threshold, the efficiency, optimised with respect to αl andR, depends only on the parameter(P/W)α/ηiE2gσwhere ηiis the internal efficiency and Egis the bandgap voltage. The form of this dependence and the range of reflectivity, laser length and power level for which it is applicable are derived. The results are compared with those which have been derived previously for lower relative power levels where optimum efficiency is obtained by operation reasonably close to threshold.

DOI:10.1049/ij-ssed.1977.0009

出版商:IEE    

年代:1977

数据来源: IET

摘要:

Thin (6μm) thick Si has been ion implanted to fabricate ap–i–nphotodiode with an overall rise time probably better than 80 ps. The narrow depletion region gives short transit times, and the shallow ion-implanted junctions lead to minimal amounts of minority carrier storage, thus eliminating any slow tail to the voltage-output response to a step change of light input.

DOI:10.1049/ij-ssed.1977.0010

出版商:IEE    

年代:1977

数据来源: IET

摘要:

A complete description of the important relaxation processes in gallium arsenide is presented. Included for the first time are the individual valley properties, combined with the electric field dependence of all relaxation times.

DOI:10.1049/ij-ssed.1977.0011

出版商:IEE    

年代:1977

数据来源: IET