摘要:

A technique is described which utilises a long-gate m.o.s.f.e.t. structure to measure carrier density and drift mobility profiles in submicrometre epitaxial and ion-implanted layers. Both profiles are recovered right up to the semiconductor surface. Application of the method to studying carrier transport processes in layers for short-gate f.e.t.s indicates that mobility degradation due to diffuse surface scattering occurs, resulting in a surface-mobility/bulk-mobility ratio varying between 0.5 and 1

DOI:10.1049/ij-ssed.1979.0009

出版商:IEE    

年代:1979

数据来源: IET

摘要:

An m.o.s. operational amplifier suitable for large-scale integration usingn-channel enhancementdepletion technology is reported. It has a large gain of 94 dB, a unity-gain bandwidth of 1 MHz with a small power dissipation of 2.4 mW and it occupies only 0.2 mm2. These miniaturised amplifiers require computeraided design, and the capabilities of the nonlinear d.o.m.o.s. model and computer program are demonstrated. Simple equations for exploratory design and comparison with designs using weak-inversion, complementary or bipolar transistors are also discussed.

DOI:10.1049/ij-ssed.1979.0010

出版商:IEE    

年代:1979

数据来源: IET

摘要:

The current/voltage characteristics of Sin-p-ntransistors, when the device is pulsed into second breakdown for several nanoseconds, are studied. The collector/base characteristics have limits given byIe= 0 which can be modelled approximately by neglecting recombination, and byIb= 0 which requires recombination to be fully understood. This later condition is closely analagous to the Kirk effect with a plasma of holes and electrons close to the base region. In all these second-breakdown states the electron multiplication factor is low, typically less than 1.33, so that there is little useful multiplication gain. Second breakdown thus prevents the transistor from being used as a 3-terminal avalanche transistor. Failure at high current levels occurs most readily in theIe= 0 state. The cutback in voltage and increase in current can be limited by tailoring the collector impurity profile. These two features suggest ways in which transistors may be improved to protect them against short pulse burnout via current-mode second breakdown.

DOI:10.1049/ij-ssed.1979.0011

出版商:IEE    

年代:1979

数据来源: IET

摘要:

Current/voltage characteristics obtained under dark and illuminated conditions have been examined for Al-p-Si M.I.S. solar cells. The results obtained show that the voltage across the cells taken at the maximum powerpoint is typically 50 mV smaller when the cells are illuminated compared to the voltage at the same point in darkness. This is explained as an increase in the recombination current and as an increased concentration of minority carriers at the interface states of about 1012cm−2when going from dark to illuminated conditions. The result is that the fill factor obtained from the illuminated characteristic is about 9% smaller than if the fill factor is calculated from the dark characteristics.

DOI:10.1049/ij-ssed.1979.0012

出版商:IEE    

年代:1979

数据来源: IET