摘要:

A theory of noise in semiconductor devices is developed, expressing the intrinsic noise as the response of the electronic system to primary fluctuations of the electrons due to the statistical nature of the scattering events. The theory leads to a computational method complementing an existing technique for solving the Boltzmann equation for a device. The method is primarily aimed at noise in hot electron devices. It is applied to the transferred-electron amplifier, taking theoretical models of GaAs as definite examples and the predictions are compared with previous theory and experimental data.

DOI:10.1049/ij-ssed.1977.0026

出版商:IEE    

年代:1977

数据来源: IET

摘要:

A selected bibliography is presented detailing the relevant technical literature describing the technology development and applications for integrated injection logic (I2L) and merged transistor logic (MTL).The period covered is, in effect, from 1971 to July 1977.

DOI:10.1049/ij-ssed.1977.0027

出版商:IEE    

年代:1977

数据来源: IET

摘要:

The spectral response, the voltage and current that give maximum power, and the conversion efficiency have all been calculated for Ga1-xAlxAs/p-GaAs/n-GaAs solar cells that have multilayer GaAlAs windows on their surfaces. In the numerical analysis, photo-generated carrier collection in the window layers was considered. The spectral response in the short-wavelength region could be improved if either the Al composition factorxof the window layer was made larger or the window was made thinner. The lifetime of the carriers in thep-GaAs layer is especially important for improving the spectral response and the conversion efficiency. The increases of donor concentration in then-GaAs bulk region and of acceptor concentration in thep-GaAs layer cause the current and voltage to increase. Thus the multilayer structures can make efficient use of the short-wavelength region of the spectrum and be easier to produce than a continuously graded structure. Conversion efficiencies can be approximately 20% in AMO.

DOI:10.1049/ij-ssed.1977.0028

出版商:IEE    

年代:1977

数据来源: IET

摘要:

The crystal-violet/tin-oxide solar cell which has been reported briefly in a recent patent was tested for u.v. stability under a variety of chemical conditions, and, in every case, was found to be unstable. Degradation effects produced by chemical reactions are strongly indicated by absorption and action spectra as the pH of the cell was varied. Thep-njunction model is rejected for this type of crystal-violet/tin-oxide heterojunction cell. The potential of organic solar cells based on a dye-oxide semiconductor junction for cheap, lightweight and large-area devices is discussed, and some of the possible materials are reviewed.

DOI:10.1049/ij-ssed.1977.0029

出版商:IEE    

年代:1977

数据来源: IET