摘要:

The response of m.o.s. devices to a fast linear voltage ramp, when under illumination, is analysed. The presence of traps in the semiconductor bulk is taken into account, and it is found that bulk generation and photogeneration are similar, but not identical, effects. The devices exhibit a photoresponse up to a maximum value of light intensity, when saturation occurs, and no further light sensitivity is observed. Experimental data is presented for conditions when bulk generation is significant and insignificant, and good agreement is found in each case between theory and experiment.

DOI:10.1049/ij-ssed.1979.0025

出版商:IEE    

年代:1979

数据来源: IET

摘要:

The effect of gold recombination centres on the trapping state at the Si-SiO2interface, and in the bulk, has been studied. The technique involves applying a linear voltage-ramp to the m.o.s. device and measuring the resultingI/Vcharacteristic. From the quasiequilibriumI/Vcurves, it is apparent that gold-doping produces a pronounced peak in the interfacial trap distribution occuring at energyEv+ 0.6eV with a density ofNss= 2.5 × 1011(cm2eV)−1. Subsequent non-steady-stateI/Vmeasurements are used to study the bulk recombination properties of gold, and thus determine a value for the capture cross-section (σp≃ 1.1 × 10−15cm2).

DOI:10.1049/ij-ssed.1979.0026

出版商:IEE    

年代:1979

数据来源: IET

摘要:

The effects of Ar-ion implant gettering has been investigated using the linear voltage ramp applied to m.o.s. capacitors. A comparison is made with control (not implanted) samples and N+-ion Rutherford backscattering is used to examine the precipitation of generation impurities by the damaged layers. The gettering anneals were carried out over the temperature range 950°C–1100°C and for various times from 15 min to 120 min. It is shown that long gettering anneal times and high anneal temperatures both have a detrimental effect on minority-carrier lifetime.

DOI:10.1049/ij-ssed.1979.0027

出版商:IEE    

年代:1979

数据来源: IET

摘要:

TheV/Icharacteristics of a gallium arsenide dual-gate field-effect transistor have been simulated numerically, using the Monte Carlo method. The transconductances extracted from these characteristics agree with those from a real device of the same geometrical and physical description.

DOI:10.1049/ij-ssed.1979.0028

出版商:IEE    

年代:1979

数据来源: IET

摘要:

At frequencies above the range at which low-frequency-generation noise is dominant, thermal noise in the channel is the main noise source of a junction field-effect transistor. Starting from the well known current and continuity equations, the drain- and gate-noise spectra and their correlation coefficient are calculated by means of a series expansion, in a second-order approximation. The results are compared with calculations and measurements of other authors. There is good agreement with experiments, but differences exist with some of the earlier computations in the literature.

DOI:10.1049/ij-ssed.1979.0029

出版商:IEE    

年代:1979

数据来源: IET

摘要:

A transistor is proposed in which hot electrons cross a degenerate semiconductor base region and overcome a potential barrier in the bulk of the semiconductor which forms a collector. Structures in silicon corresponding to this concept have been fabricated using low-energy ion implantation and have given transistor action consistent with hot-electron transport.

DOI:10.1049/ij-ssed.1979.0030

出版商:IEE    

年代:1979

数据来源: IET

摘要:

A theoretical investigation of the stationary behaviour of transferred electron devices with GaAs-type velocity-field characteristics has been carried out on an electron concentration field plane. Solutions over a wide range of doping concentration which satisfy the boundary conditions forn+-n-n+structure can topologically be obtained using the method of the field of directions which was introduced by Böer and associates. The use of this method enable us not only to understand and predict a variety of device phenomena based on formation of an anode domain, but also to see the concept of instability.

DOI:10.1049/ij-ssed.1979.0031

出版商:IEE    

年代:1979

数据来源: IET

摘要:

The noise characteristics of a semiconductor punchthrough structure are examined for operation under low-field conditions, i.e. constant mobility, and for trap levels in the bandgap of the semiconductor. It is shown that the noise measure is decreased under the influence of trapping of injected carriers, for the small-signal injection approximation. With the increase of the concentration of traps, the noise measure decreases, but the frequency band, where it takes place, narrows and is displaced to a lower frequency.

DOI:10.1049/ij-ssed.1979.0032

出版商:IEE    

年代:1979

数据来源: IET

摘要:

A theory of large-signal Impatt oscillator operation, including the effects of both constant and modulated optical carrier generation, is developed. This theory is related to easily measurable parameters of the particular device and predicts useful oscillator locking ranges for modest modulated optical-power levels. Computer simulations of practical device structures, under optical control, supplement the analytical work. The paper concludes with some recent results from an experiment in which optical subharmonic locking of an X-band Impatt oscillator has been achieved.

DOI:10.1049/ij-ssed.1979.0033

出版商:IEE    

年代:1979

数据来源: IET