ISSN:0748-8017    

DOI:10.1002/qre.4680080302

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1992

数据来源: WILEY

摘要:

AbstractConsiderable attention has been paid recently to the behaviour of the hazard rate functionh(t) as a function of time. This discussion has led to a lot of speculation as to the shape of the traditional ‘bathtub’ curve showing failure or hazard rate as a function of time. Studies at the International Electronics Reliability Institute (IERI) at Loughborough University of Technology, in the United Kingdom, have recently been examining in detail the database created from field failure returns on a wide spectrum of electronic components. These components are in equipment subject to a spread of environmental conditions. The database created has been exercised with particular reference to the behaviour of MOS Ics, rectangular connectors, bipolar transistors andpn‐junction diodes. Data has been analysed using pooled information from a wide variety of sources and also from two specific environmental conditions, ground benign and ground mobile.The results of this analysis are presented and the failure intensities as a function of time are given at 1000 hour intervals up to a total time of 21,000 hours. Confidence limits at the 95 per cent X2level are also given. The results show a rapidly falling failure intensity for the first few thousand hours and after this time the failure intensity appears to be relatively constant given the accuracy obtainable with the data avai

ISSN:0748-8017    

DOI:10.1002/qre.4680080303

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1992

数据来源: WILEY

摘要:

AbstractTemperature is generally considered to be a key parameter in the design of electronic equipment, and cautions concerning temperature and its relationship to reliability are widely documented. While some studies suggest that temperature is the most critical stress influence on microelectronic device failures, the actual failure mechanisms have generally not been quantified in terms of whether a steady state temperature, temperature change, rate of temperature change, or spatial temperature gradient induced failure. In this paper, the influence of temperature on major integrated circuit failure mechanisms is discussed, with emphasis placed on those failure mechanisms which occur in the temperature range of ‐55°C to 125°C. This paper shows that no simple expression can adequately describe temperature as a failure accelerator for all integrated circuit failure mechanisms. In fact, a generic statement that can be attributed to temperature is lacking. This suggests that a much deeper level of insight into temperature dependencies is necessary to achieve reliable equipment and avoid unnecessary thermal design complexities. Thermal management in electronic equipment can involve additional costs and system complexities that can be of consequential importance, and temperature control should not be routinely employed without close study and justificat

ISSN:0748-8017    

DOI:10.1002/qre.4680080304

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1992

数据来源: WILEY

摘要:

AbstractBesides conventional IC failure mechanisms, the floating gate (FG) device reliability is affected by data retention, characteristic of non‐volatile memories, and endurance, typical of electrically erasable arrays.The subjects of this work are EPROM and flash EEPROM, the leading and most promising devices among the FG non‐volatile memories.The degradation mechanisms observed in programming and erasing steps are investigated. EPROM data retention is associated with intrinsic and defect related charge loss with both electronic and ionic processes involved. Experimental results are presented.The reliability problems associated with repeated write/erase cycles are introduced, and their effects on EEPROM endurance discussed.Finally, a fishbone diagram for data retention is proposed. The complexity of technology and the cell scaling down with increasing chip size impose lower failure rate goals and reliability becomes integrated within the manufacturing proc

ISSN:0748-8017    

DOI:10.1002/qre.4680080305

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1992

数据来源: WILEY

摘要:

AbstractSafeguarding the reliability of electronics exposed to the severe conditions occurring in tropical climates, such as India, has not been adequately understood or dealt with in international specifications. Consequently, components and equipment supplied to such specifications have failed in such climates. The vulnerability of supposedly hermetic components has been suspected as a result of a full analysis of moisture ingress, and this has been borne out by comprehensive analyses of the actual failures of components supplied to international specifications, and the climatic conditions actually occurring in India. Understanding of reliability assessment and achievement has been significantly advanced by such analysis and has shown the necessity and applicability of the highly accelerated stress testing technique invented at British Telecom Laboratories more than two decades ago. Comparison has shown the significant cost benefit from the use of plastic encapsulated devices of proven reliability.

ISSN:0748-8017    

DOI:10.1002/qre.4680080306

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1992

数据来源: WILEY

摘要:

AbstractThis paper introduces a reliability prediction model for plastic encapsulated integrated circuits to be used in professional or defence electronics applications. The first part is a comparison between different reliability prediction models: their hypotheses, assumptions and validity domains are examined; constructive criticism is made and model amendments proposed for plastic encapsulated ICs reliability prediction. The second part presents the model itself. It addresses also thermal and environmental aspects. The third part explains how numerical values are found to fill the model and how it reflects the reliability of today's state‐of‐the‐art of plastic encapsulation. In conclusion, we present the improvements that this model can bring to reliability prediction, in the particular case of plastic pac

ISSN:0748-8017    

DOI:10.1002/qre.4680080307

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1992

数据来源: WILEY

摘要:

AbstractFunctional tests with an electrical tester have revealed defects in an ASIC. Results analysis leads to incriminating different areas of the layout. A laser beam tester localizes the logic operator responsible for the dysfunction observed with the electrical tester.

ISSN:0748-8017    

DOI:10.1002/qre.4680080308

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1992

数据来源: WILEY

摘要:

AbstractA static memory array is described for use as a test vehicle in CMOS process development. Design guidelines are given for a large operating range and good testability. Address paths are defined for efficient comparison of access time measurements and simulations. the functional yield of SRAMs is correlated with defect density results from test structures to identify the relevant yield limiting defects. It is shown that an SRAM is a suitable test vehicle for yield prediction of complex CMOS random logic circuits.

ISSN:0748-8017    

DOI:10.1002/qre.4680080309

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1992

数据来源: WILEY

摘要:

AbstractEmission microscopy has now become established as an effective technique in terms of reliability physics of industrial semiconductors. This convenient method allows chip verification and failure analysis to be carried out in many applications. Besides this, emission microscopy provides a technique for use in device engineering and the optimization of test structures. The key to using this technique to permit a more sophisticated quantitative analysis lies in an unique assignment of the light emission to the defect mechanism. Since the corresponding phenomena are numerous and their details have to be clarified before this technique can be used routinely in a quantitative rather than qualitative approach, fundamental investigations were carried out on the basis of test structures. The applicability of quantitative aspects of emission microscopy in practice, i.e. exemplified by some relevant case studies, has further been discussed in this paper.

ISSN:0748-8017    

DOI:10.1002/qre.4680080310

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1992

数据来源: WILEY

摘要:

AbstractIn order to analyse failures caused in multilevel metallized LSI devices. we developed the OBIC (optical beam induced current) observation technique using an infrared laser incident upon a backside of the chip which appears from a plastic package by being lapped and polished.We analysed the electrical rejects in the reliability stressing of surface mount plastic packages with this technique. The latch‐up phenomenon in 4Mbit dynamic RAM with retrograded‐well fabricated by a high energy (MeV) ion‐implantation was also examined. The high latch‐up immunity of the device with retrograded‐well is confirmed by this

ISSN:0748-8017    

DOI:10.1002/qre.4680080311

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1992

数据来源: WILEY