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1. |
Editorial |
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Quality and Reliability Engineering International,
Volume 10,
Issue 4,
1994,
Page 253-253
N. Labat,
A. Touboul,
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ISSN:0748-8017
DOI:10.1002/qre.4680100402
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1994
数据来源: WILEY
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2. |
Integration of efforts for the reliability of microelectronic devices |
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Quality and Reliability Engineering International,
Volume 10,
Issue 4,
1994,
Page 255-261
W. Gerling,
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PDF (738KB)
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摘要:
AbstractThe expected levels of product reliability will no longer be measurable at product qualification. The control of reliability must be completely changed to proactive measures. This requires close customer‐vendor relationships in early phases of specification and qualification, basic solutions by robust design and tough manufacturing engineering with zero defect targets. This changing situation is illustrated by some examples in the very diverse field of contributions to reliability. Improved cooperation is required for more efficient reliability progres
ISSN:0748-8017
DOI:10.1002/qre.4680100403
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1994
数据来源: WILEY
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3. |
Component lifetime modelling |
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Quality and Reliability Engineering International,
Volume 10,
Issue 4,
1994,
Page 263-271
J. F. Verweij,
A. C. Brombacher,
M. M. Lunenborg,
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摘要:
AbstractThere are two approaches to component lifetime modelling. The first one uses a reliability prediction method as described in the (military) handbooks with the appropriate models and parameters. The advantages are:(a)It takes into account all possible failure mechanisms.(b)It is easy to use.The disadvantages are:(a)It assumes a constant failure rate which is often not the case (infant mortality).(b)It contains no designable parameters and therefore it cannot be used for built‐in reliability.The second approach is to model the different degradation mechanisms and to incorporate this into an (existing) circuit simulator. Here we have also advantages and disadvantages which are mostly complementary to those of the first metho
ISSN:0748-8017
DOI:10.1002/qre.4680100404
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1994
数据来源: WILEY
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4. |
Implementation of laser beam sensitive cells: A new approach for integrated circuits testing |
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Quality and Reliability Engineering International,
Volume 10,
Issue 4,
1994,
Page 273-277
P. Fouillat,
S. Gervais‐Ducouret,
H. Lapuyade,
J. P. Dom,
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PDF (456KB)
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摘要:
AbstractThe use of library cells, specially designed for their sensitivity to a laser beam, is a potential solution for both ‘observability’ and ‘controllability’ problems encountered by the test engineers. The basic principle relies on the photo‐induced current generated in the laser beam‐silicon interaction. The ‘observation’ cells, when probed by the beam, are used to read directly a logic level inside the circuit, whereas the ‘control’ cells are used to force a particular node of the circuit. A test structure including a 16 bits counter with 16 ‘observation’ cells and 1 ‘control’ cell has been fabricated in BiCMOS technology in order to illustr
ISSN:0748-8017
DOI:10.1002/qre.4680100405
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1994
数据来源: WILEY
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5. |
Testability enhancement of a basic set of CMOS cells |
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Quality and Reliability Engineering International,
Volume 10,
Issue 4,
1994,
Page 279-288
M. Rullán,
J. Oliver,
C. Ferrer,
F. C. Blom,
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摘要:
AbstractTesting should be evaluated as the ability of the test patterns to cover realistic faults, and high quality IC products demand high quality testing. We use a test strategy based on physical design for testability (to discover both open and short faults, which are difficult or even impossible to detect). Consequentially, layout level design for testability (LLDFT) rules have been developed, which prevent the faults, or at least reduce the chance of their appearing. The main purpose of this work is to apply a practical set of LLDFT rules to the library cells designed by the Centre Nacional de Microelectrònica (CNM) and obtain a highly testable cell library. The main results of the application of the LLDFT rules (area overheads and performance degradation) are summarized and the results are significant since IC design is highly repetitive; a small effort to improve cell layout can bring about great improvement in design
ISSN:0748-8017
DOI:10.1002/qre.4680100406
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1994
数据来源: WILEY
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6. |
Early detection of ageing in solder joints through laser probe thermal analysis of the peltier effect |
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Quality and Reliability Engineering International,
Volume 10,
Issue 4,
1994,
Page 289-295
W. Claeys,
V. Quintard,
S. Dilhaire,
D. Lewis,
Y. Danto,
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摘要:
AbstractWe have recently developed an optical contactless method for testing the quality of solder joints during accelerated thermal cycling ageing processes.1The method was based upon the measurement of the dynamic thermal behaviour of the joint to short bursts of Joule heating. It has proved to be efficient in revealing the formation of cracks at the lead‐solder interface. We present a method to evaluate ageing at a much earlier stage in the cycling process. We have observed in earlier work,1that before cracks appear, structural changes occur in the solder at the lead‐solder interface. The thermal response of the solder joint is recorded over time to a Peltier heat perturbation produced by flowing a current pulse through the interface where structural changes occur. The key point in this method is to discriminate the Peltier effect from the Joule thermal response because both effects generate heat. The variation of the early Peltier response in the thermal cycling ageing tests is seen as a quantitative signature of the structural changes in the lead‐solder inte
ISSN:0748-8017
DOI:10.1002/qre.4680100407
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1994
数据来源: WILEY
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7. |
Application of defect simulation as a tool for more efficient failure analysis |
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Quality and Reliability Engineering International,
Volume 10,
Issue 4,
1994,
Page 297-302
S. Griep,
B. Khare,
R. Lemme,
U. Papenberg,
D. Schmitt‐Landsiedel,
W. Maly,
D. M. H. Walker,
J. Winnerl,
T. Zettler,
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PDF (561KB)
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摘要:
AbstractIn modern VLSI processes, increasing process complexity has resulted in an exponential rise in the costs of thorough failure analysis. In this paper, we present a defect simulation‐based failure analysis methodology, which can be used to significantly reduce both costs and turn‐around time for failure analyses. The methodology is based on the ability to generate a defect dictionary, which can relate defect characteristics to some easily measurable symptoms of defect occurre
ISSN:0748-8017
DOI:10.1002/qre.4680100408
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1994
数据来源: WILEY
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8. |
Reliability modelling for electromigration failure |
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Quality and Reliability Engineering International,
Volume 10,
Issue 4,
1994,
Page 303-308
J. R. Lloyd,
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摘要:
AbstractElectromigration has been recognized as one of the most important wearout failure mechanisms in integrated circuits. As such, the problem of extrapolating test results for the purpose of reliability predictions is very important to the industry, and the topic has understandably received considerable attention in the professional literature. Over the years, however, there have been serious problems correlating experimental results with theoretical predictions. Recently this dilemma has become resolved through a better understanding of the failure process. This paper will review these developments and the process that has led us to where we are today.
ISSN:0748-8017
DOI:10.1002/qre.4680100409
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1994
数据来源: WILEY
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9. |
The use of early resistance and early tcr changes to predict the reliability of on‐chip interconnects |
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Quality and Reliability Engineering International,
Volume 10,
Issue 4,
1994,
Page 309-314
V. D'haeger,
H. Stulens,
W. de Ceuninck,
L. de Schepper,
L. Tielemans,
G. Gallopyn,
P. de Pauw,
L. M. Stals,
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PDF (443KB)
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摘要:
AbstractA new method is presented to evaluate the resistance to electromigration of on‐chip interconnects. The method is based on the high resolutionin‐situelectrical resistance technique. During high temperature and high current density stress measurements, two types of processes occur simultaneously: structure‐relaxation and electromigration. In order to study these processes separately, the experimental conditions are adapted. The electrical resistance and TCR is measured before and after structure‐relaxation and/or electromigration. Using Matthiessen's rule, it is possible to separate the contribution of the resistivity variation from the variation in geometry. The first process causes a decrease of the resistivity, whereas the second causes an increase. The influence of Cu‐addition and deposition temperature is also investigated. Correlation of the resistivity variations with conventional mean time to failure (MTTF) data is demonstrated. As a consequence, with our short‐time method, predictions of the resistance to electromigration of on‐chip interconnects can be made after typical test times of 2
ISSN:0748-8017
DOI:10.1002/qre.4680100410
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1994
数据来源: WILEY
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10. |
Electrical measurements as performance indicators of electromigration |
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Quality and Reliability Engineering International,
Volume 10,
Issue 4,
1994,
Page 315-318
B. K. Jones,
Y. Z. Xu,
T. C. Denton,
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PDF (344KB)
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摘要:
AbstractMeasurements were made of various electrical parameters on metal interconnects at intervals during electromigration life tests. The results show a close correlation between the progression of electro‐migration and increases of the resistance values, harmonic content and excess noise. Also, the statistical trend of the variations of these parameters with normalized lifetime for a number of failed samples is very consistent with the trend during a continuously monitoring experiment, where the electrical properties of tracks were monitored continuously while being electrically and thermally stressed. There are implications in the potential importance of such measurements for the non‐destructive tests of electromigrat
ISSN:0748-8017
DOI:10.1002/qre.4680100411
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1994
数据来源: WILEY
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