|
1. |
Foreword |
|
Quality and Reliability Engineering International,
Volume 7,
Issue 4,
1991,
Page 203-203
Emiliano Pollino,
Fausto Fantini,
Preview
|
PDF (101KB)
|
|
ISSN:0748-8017
DOI:10.1002/qre.4680070402
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1991
数据来源: WILEY
|
2. |
Letter to the editor |
|
Quality and Reliability Engineering International,
Volume 7,
Issue 4,
1991,
Page 205-206
Andrew H. Rawicz,
Preview
|
PDF (162KB)
|
|
ISSN:0748-8017
DOI:10.1002/qre.4680070403
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1991
数据来源: WILEY
|
3. |
Modern reliability assurance of integrated circuits—A strategy based on technology capability assessment and production reproducibility control |
|
Quality and Reliability Engineering International,
Volume 7,
Issue 4,
1991,
Page 207-214
W. Gerling,
Preview
|
PDF (689KB)
|
|
摘要:
AbstractTechnological innovations provide integrated circuits of increased functionality and complexity, and modern design tools facilitate a new multiplicity of products, such as application‐specific products (ASICs). Traditional qualification procedures cannot keep pace with this evolution with respect to requirements of product reliability, ability of qualifying the multiplicity of future products, and market demands for saving cost and time.A further development of a reliability assurance concept, which will be discussed here, considers design tools, basic product elements, materials, manufacturing process and controls as a ‘system’, which has to be qualified with respect to the consistency and efficiency of all of the implemented reliability assurance measures. The concept is based on the manufacturer's ‘system’ knowledge and responsibility. It is compatible with the relevant requirements of ISO 9000 and recent military standard proposals. The procedure is applied to commercial products.The main part of this concept is the qualification of the manufacturing technology. The procedure is organized as a continuous process starting at the concept phase of a new technology and its pilot product. The various steps then follow the development, the pre‐series and series production phases. The reliability aspects concentrate on the physical properties of product elements relevant to their stability and endurance, i.e. the potential failure mechanisms and their root causes as reliability risks. Thus a major part of reliability testing for the qualification of the pilot product of a new technology can be performed without the use of the final product version. The benefits derivable from this approach are savings in time and cost as well as the capability to handle future product m
ISSN:0748-8017
DOI:10.1002/qre.4680070404
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1991
数据来源: WILEY
|
4. |
Microelectronic reliability/temperature independence |
|
Quality and Reliability Engineering International,
Volume 7,
Issue 4,
1991,
Page 215-220
Edward B. Hakim,
Preview
|
PDF (590KB)
|
|
摘要:
AbstractIt is shown that microelectronic failures which occur within equipment operating temperature extremes are not dependent on absolute temperature! Therefore, tremendous equipment reductions can be made in size, weight and cost, and there will be an improvement in reliability by elimination of failures due to unreliable complex cooling systems.
ISSN:0748-8017
DOI:10.1002/qre.4680070405
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1991
数据来源: WILEY
|
5. |
Evolution of VLSI reliability engineering |
|
Quality and Reliability Engineering International,
Volume 7,
Issue 4,
1991,
Page 221-233
D. L. Crook,
Preview
|
PDF (1108KB)
|
|
摘要:
AbstractProjection indicates that by the turn of the century microcomputer chips will have 100 million transistors and failure rates of less than 10 FIT. Traditional accelerated product life tests and wafer level reliability measurement techniques being developed at present will have severe limitations in resolving the 10 FIT failure rate of complex VLSI circuits. This paper discusses these limitations along with the change in direction that the reliability engineering and manufacturing community will have to take over the next decade to meet the challenge of continuously decreasing failure rate goals.
ISSN:0748-8017
DOI:10.1002/qre.4680070406
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1991
数据来源: WILEY
|
6. |
Optoelectronics reliability |
|
Quality and Reliability Engineering International,
Volume 7,
Issue 4,
1991,
Page 235-241
Tetsuhiko Ikegami,
Mitsuo Fukuda,
Preview
|
PDF (627KB)
|
|
摘要:
AbstractThis paper reviews degradation modes and reliability in several kinds of InGaAsP/InP lasers and photodetectors used in optical fibre transmission systems. From the viewpoint of degradation mechanisms, BH type Fabry–Perot lasers, DFB lasers, a 0.98 μm strained quantum well InGaAs/GaAs laser, and InGaAs PIN photodetectors and APDs are review
ISSN:0748-8017
DOI:10.1002/qre.4680070407
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1991
数据来源: WILEY
|
7. |
Electron beam testing |
|
Quality and Reliability Engineering International,
Volume 7,
Issue 4,
1991,
Page 243-248
E. Wolfgang,
S. Görlich,
J. Kölzer,
Preview
|
PDF (673KB)
|
|
摘要:
AbstractElectron‐beam testing (EBT) is currently used at two stages in the development and manufacture of integrated circuits (ICs), namely for chip verification and failure analysis. These are explained with the aid of two examples. EBT is, however, only one of many diagnostic tools. In order to classify it more usefully, a scenario is described that takes account of trends in chip development and packaging, and the linking of EBT with CAD (computer‐aided design) and CAT (computer‐aided testing). The conclusion is reached that EBT will remain an indispensable diagnostic tool. In future, it will probably be used under increasingly more difficult conditions, however, due primarily to the greater complexity of specimen preparation and test stimuli gener
ISSN:0748-8017
DOI:10.1002/qre.4680070408
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1991
数据来源: WILEY
|
8. |
Failure analysis using ferroelectric liquid crystals |
|
Quality and Reliability Engineering International,
Volume 7,
Issue 4,
1991,
Page 249-254
B. Picart,
A. Arranz,
G. Oustry,
B. Tromeur,
Preview
|
PDF (554KB)
|
|
摘要:
AbstractThe complexity of present VLSI chips requires powerful tools to detect possible defects. For such a purpose, internal contactless testing methods such as electron beam or laser testing, have been developed to help the precise localization of the electrical defect.The aim of this paper is to describe the liquid crystals test method, used at the IBM COMPEC laboratory for failure analysis. The electro‐optical properties of these materials allow the visualization of electric signals on the chips surfac
ISSN:0748-8017
DOI:10.1002/qre.4680070409
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1991
数据来源: WILEY
|
9. |
Photon emission as a tool for esd failure localization and as a technique for studying ESD phenomena |
|
Quality and Reliability Engineering International,
Volume 7,
Issue 4,
1991,
Page 255-259
Marcel Hannemann,
Ajith Amerasekera,
Preview
|
PDF (639KB)
|
|
摘要:
AbstractPhoton emission microscopy gives the opportunity for non‐destructive localization of failure sites on VLSI chips. Failures that can be detected using photon emission microscopy are gate‐oxide breakdown, latch‐up, junction breakdown and intermetal oxide failures. This makes it a valuable evaluation technique of failures in ESD protection circuits.Real‐time photon emission observations of reverse‐biased transistors showed that this technique is also an important tool in the evaluation and development of ESD protection
ISSN:0748-8017
DOI:10.1002/qre.4680070410
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1991
数据来源: WILEY
|
10. |
A som study of DC‐PBH laser catastrophic failures |
|
Quality and Reliability Engineering International,
Volume 7,
Issue 4,
1991,
Page 261-265
Paolo Montangero,
Michele Liberatore,
Giuseppina Arman,
Preview
|
PDF (492KB)
|
|
摘要:
AbstractOBIC and PL imaging modes of a SOM have been successfully applied to the failure analysis of catastrophically degraded DC‐PBH lasers. High lateral resolution, variable in‐depth penetration and selective excitation are the most interesting features. A degradation mechanism has been found due to the development of leakage paths in the confining juncti
ISSN:0748-8017
DOI:10.1002/qre.4680070411
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1991
数据来源: WILEY
|
|