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1. |
NIST–JANAF Thermochemical Tables for the Iodine Oxides |
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Journal of Physical & Chemical Reference Data,
Volume 25,
Issue 5,
1996,
Page 1297-1340
M. W. Chase,
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PDF (4303KB)
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摘要:
The thermodynamic and spectroscopic properties of the iodine oxide species have been reviewed. Recommended NIST–JANAF Thermochemical Tables are given for six gaseous iodine oxides: IO, OIO, IOO, IOI, IIO, and IO3. Sufficient information is not available to generate thermochemical tables for any condensed phase species. Annotated bibliographies (over 400 references) are provided for all neutral iodine oxides which have been reported in the literature. There is a lack of experimental thermodynamic and spectroscopic information for all iodine oxide species, except IO(g) and OIO(g). The recommended thermochemical tables are based on estimates for the structure, vibrational frequencies, and enthalpy of formation based in part on the spectroscopic and thermodynamic data for the other halogen oxides [J. Phys. Chem. Ref. Data25, 551 (1996);25, 1061 (1996)]. Although there is a definite lack of information in comparison with the other halides, this information is provided for the iodine oxides for the following reasons: (1) to complete the study of the halogen oxide family and (2) to stress the need for additional experimental measurements. Of all the species mentioned in the literature, many have not been isolated or characterized. In fact, some do not exist. Throughout this paper, uncertainties attached to recommended values correspond to the uncertainty interval, equal to twice the standard deviation of the mean. ©1996 American Institute of Physics and American Chemical Society.
ISSN:0047-2689
DOI:10.1063/1.555994
出版商:AIP
年代:1996
数据来源: AIP
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2. |
Electron Interactions with CF4 |
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Journal of Physical & Chemical Reference Data,
Volume 25,
Issue 5,
1996,
Page 1341-1388
L. G. Christophorou,
J. K. Olthoff,
M. V. V. S. Rao,
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PDF (4736KB)
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摘要:
Carbon tetrafluoride (CF4) is one of the most widely used components of feed gas mixtures employed for a variety of plasma‐assisted material‐processing applications. It has no stable excited states and, in a plasma environment, is an ideal source of reactive species, especially F atoms. To assess the behavior of CF4in its use in manufacturing semiconductor devices and other applications, it is necessary to have accurate information about its fundamental properties and reactions, particularly its electronic and ionic interactions and its electron collision processes at low energies (<100 eV). In this article we assess and synthesize the available information on the cross sections and/or the rate coefficients for collisional interactions of CF4with electrons. Assessed information is presented on: (i) cross sections for electron scattering (total, momentum, elastic differential, elastic integral, inelastic), electron‐impact ionization (total, partial, multiple, dissociative), electron‐impact dissociation (total, and for dissociative excitation), and electron attachment (total, and for specific anions); (ii) coefficients for electron transport (electron drift velocity, transverse and longitudinal electron diffusion coefficients), electron attachment, and electron‐impact ionization; and (iii) cross section sets derived from analyses of electron transport data. The limited ionization data on CF4radicals are also presented, and references are made to measurements of electron transport properties of CF4gas mixtures. Based upon the assessment of published experimental data, recommended values for various cross sections and coefficients are generated which are presented in graphical and tabular form. ©1996 American Institute of Physics and American Chemical Society.
ISSN:0047-2689
DOI:10.1063/1.555986
出版商:AIP
年代:1996
数据来源: AIP
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3. |
Erratum: Volumetric Properties of Single Aqueous Electrolytes from Zero to Saturation Concentration at 298.15 K Represented by Pitzer’s Ion‐Interaction Equations [J. Phys. Chem. Ref. Data25, 663 (1996)] |
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Journal of Physical & Chemical Reference Data,
Volume 25,
Issue 5,
1996,
Page 1389-1389
Boris S. Krumgalz,
Rita Pogorelsky,
Kenneth S. Pitzer,
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PDF (35KB)
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ISSN:0047-2689
DOI:10.1063/1.555987
出版商:AIP
年代:1996
数据来源: AIP
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