| 11. |
Investigations on Uranium Chalcogenides (US, USe, and UTe) |
| |
physica status solidi (b),
Volume 137,
Issue 2,
1986,
Page 153-156
O. P. Singh,
V. P. Gupta,
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ISSN:0370-1972
DOI:10.1002/pssb.2221370244
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
|
| 12. |
Optical Absorption in Thin Films of Cerium Dioxide and Cerium Dioxide Containing Silicon Monoxide |
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physica status solidi (b),
Volume 137,
Issue 2,
1986,
Page 157-160
C. A. Hogarth,
Z. T. Al‐Dhhan,
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PDF (212KB)
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ISSN:0370-1972
DOI:10.1002/pssb.2221370245
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
|
| 13. |
On the Shaw Potential and Its Application to Self‐Consistent Band Structure and Total Energy Calculations for Silicon |
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physica status solidi (b),
Volume 137,
Issue 2,
1986,
Page 161-166
H. Wiesner,
W. Cordts,
J. Monfcke,
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ISSN:0370-1972
DOI:10.1002/pssb.2221370246
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
|
| 14. |
Semiempirical Calculation of Fluorine Substitutional Impurity in Vitreous Silicon Dioxide |
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physica status solidi (b),
Volume 137,
Issue 2,
1986,
Page 167-170
V. O. Sokolov,
V. B. Sulimov,
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ISSN:0370-1972
DOI:10.1002/pssb.2221370247
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
|
| 15. |
The Kondo Effect in Amorphous Alloys |
| |
physica status solidi (b),
Volume 137,
Issue 2,
1986,
Page 171-174
P. Kopčanský,
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ISSN:0370-1972
DOI:10.1002/pssb.2221370248
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
|
| 16. |
On the Modification of the Einstein Relation in Quasi‐One‐Dimensional Systems of Bismuth |
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physica status solidi (b),
Volume 137,
Issue 2,
1986,
Page 175-180
S. N. Biswas,
K. P. Ghatak,
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PDF (240KB)
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ISSN:0370-1972
DOI:10.1002/pssb.2221370249
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
|
| 17. |
Optical Bistability at the Absorption Edge of Semiconductors |
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physica status solidi (b),
Volume 137,
Issue 2,
1986,
Page 371-432
F. Henneberger,
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ISSN:0370-1972
DOI:10.1002/pssb.2221370202
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
|
| 18. |
Structural Disorder Model for Amorphous Semiconductors: a‐Se |
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physica status solidi (b),
Volume 137,
Issue 2,
1986,
Page 433-440
B. A. Vaid,
K. C. Sharma,
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摘要:
AbstractThe structural disorder model, recently proposed by the authors, for amorphous semiconductors is generalized for Se within the framework of the concept of charged dangling bond (CDB) defects, packing fraction, thermodynamic theory of defects, and the additive approximation near the crystalline to amorphous transition which is interpreted as a point of spontaneous production of CDB defects. The model is able to explain at least qualitatively the data on thermodynamic properties, the structural disorder parameterXrepresenting the ratio 〈U2〉x/〈U2〉0, and the width of the Urbach absorption edge
ISSN:0370-1972
DOI:10.1002/pssb.2221370203
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
|
| 19. |
X‐Ray Electron Charge Density Distribution in Silicon |
| |
physica status solidi (b),
Volume 137,
Issue 2,
1986,
Page 441-447
U. Pietsch,
V. G. Tsirelson,
R. P. Ozerov,
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摘要:
AbstractDuring the last two years new highly accurate X‐ray structure amplitudes for silicon are published. Also the scattering phases of some „forbidden”︁ reflections are determined using the X‐ray threebeam case. This allows the construction of most precise valence and difference electron density plots and the comparision with those calculated on the basis of the Aldret‐Hart X‐ray pendellösung data and by theory. The density plots are discussed in details of both, the bond and the atomic site. The contributions of various Fourier components and the influence of different temperature factors on the difference densi
ISSN:0370-1972
DOI:10.1002/pssb.2221370204
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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| 20. |
Lattice Thermal Conductivity of Gadolinium Monosulphide above Room Temperature in the Frame of Two‐Mode Conduction of Phonons |
| |
physica status solidi (b),
Volume 137,
Issue 2,
1986,
Page 449-452
M. C. Al‐Edani,
K. S. Dubey,
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摘要:
AbstractThe lattice thermal conductivity of gadolinium monosulphide is studied by estimating the separate contributions due to transverse and longitudinal phonons in the temperature range 300 to 800 K and a very good agreement is found between calculated and experimental values. It is also reported that the transverse phonons are mainly responsible for the heat conduction in the present sample. The temperature exponents for the three phonon scattering relaxation rates is also reported for gadolinium monosulphide for the first time.
ISSN:0370-1972
DOI:10.1002/pssb.2221370205
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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