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| 51. |
Localization Effect of Electrons in the InP–SiO2Interface |
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physica status solidi (b),
Volume 138,
Issue 2,
1986,
Page 735-743
Mao Er‐wang,
Zhang Hung‐rei,
Wang Wei‐yuan,
Ye Liang,
Fang Guo‐ping,
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摘要:
AbstractA research on the conductivity of the InP‐SiO2interface reveals a localization effect related to long‐range fluctuations of the surface potential. The investigation of the negative magnetoresistance effect shows that the inelastic scattering interactions of electron–electron and electron–polar optic phonon play an important role in the InP interface and obviously affect the negative magnetoresistance. Interaction between electrons is decisively important in activated localization conductance and Mott's mobility edge model is the limit of the model obtained by neglecting the inte
ISSN:0370-1972
DOI:10.1002/pssb.2221380239
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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| 52. |
Erratum |
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physica status solidi (b),
Volume 138,
Issue 2,
1986,
Page 744-744
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PDF (108KB)
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ISSN:0370-1972
DOI:10.1002/pssb.2221380240
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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| 53. |
Masthead |
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physica status solidi (b),
Volume 138,
Issue 2,
1986,
Page -
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PDF (113KB)
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ISSN:0370-1972
DOI:10.1002/pssb.2221380201
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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