摘要:

AbstractThe electric field around a single edge dislocation in a semiconductor is analyzed taking into account the screening effect of free electrons. Theoretical calculations are made on the temperature dependent single dislocation electrical barrier (SDEB). SDEB dependence on concentration of impurities is computed. The existence of a very narrow inversion layer around a single dislocation is strongly limited by the temperature and donor concentration. The validity of Read's dislocation model is discussed and the new model is considered.

ISSN:0370-1972    

DOI:10.1002/pssb.2221090148

出版商:WILEY‐VCH Verlag    

年代:1982

数据来源: WILEY

摘要:

AbstractA two state model, based on different degrees of ionicity in the β and α phase, is used as a basis for discussion of the phase transition and dc conductivity in AgI‐type ionic conductors. A decrease (softening) in the frequency of anion oscillations is capable of accounting both for the transition from low to high ionicity (β → α) states, and for the increase in dc conductivity by several orders of ma

ISSN:0370-1972    

DOI:10.1002/pssb.2221090149

出版商:WILEY‐VCH Verlag    

年代:1982

数据来源: WILEY

ISSN:0370-1972    

DOI:10.1002/pssb.2221090101

出版商:WILEY‐VCH Verlag    

年代:1982

数据来源: WILEY