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| 61. |
On the Temperature Dependence of Hole Mobility in Silicon |
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physica status solidi (b),
Volume 37,
Issue 1,
1970,
Page 433-438
M. Asche,
J. Von Borzeskowski,
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摘要:
AbstractThe influence of the non‐parabolicity of the valence band on the hole mobility in Si is investigated. The numerical and experimental results can be fitted if for the holes the non‐parabolicity of the energy spectrum as well as their scattering on acoustic and optical phonons are taken into acco
ISSN:0370-1972
DOI:10.1002/pssb.19700370148
出版商:WILEY‐VCH Verlag
年代:1970
数据来源: WILEY
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| 62. |
Calculation of the Magnetoconductivity in n‐Si in High Electric Fields |
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physica status solidi (b),
Volume 37,
Issue 1,
1970,
Page 439-444
M. Asche,
O. G. Sarbei,
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摘要:
AbstractThe magnetoconductivity of hot carriers in n‐Si for 77 °K is examined theoretically. Ellipsoidal constant energy surfaces and redistribution of electrons between the valleys are taken into account. The calculations are performed for the case of weak magnetic fields in thedirection, when the electric field is applied along. The numerical results exhibit the characteristic features observed experimentally, i.e. a region of negative magnetoresistivity for intermediate electric field strengt
ISSN:0370-1972
DOI:10.1002/pssb.19700370149
出版商:WILEY‐VCH Verlag
年代:1970
数据来源: WILEY
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| 63. |
Preparation and Optical Properties of Evaporated β‐HgS Films |
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physica status solidi (b),
Volume 37,
Issue 1,
1970,
Page 445-451
K. J. Siemsen,
H. D. Riccius,
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摘要:
AbstractA modified vacuum deposition technique has been developed for producing thin films of HgS with cubic structure. Transmission and reflection measurements near the fundamental absorption edge have been carried out at various temperatures. The room temperature energy gap is determined to be 0.54 eV. The temperature shift of the optical absorption edge in β‐HgS is +7.7 × 10−4eV/°K. With increasing carrier concentration, the absorption edge exhibits a shift to higher energies. The electron effective mass has been determined from reflectivity measurements. Its dependence on carrier concentration indicates nonparabolic behaviour of the conduction band. The temperature dependence of the electrical resistivity, Hall coefficient, and mobility between 4.2 and 300 °K has been measured. These studies reveal semimetallic behaviour o
ISSN:0370-1972
DOI:10.1002/pssb.19700370150
出版商:WILEY‐VCH Verlag
年代:1970
数据来源: WILEY
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| 64. |
Erratum |
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physica status solidi (b),
Volume 37,
Issue 1,
1970,
Page 453-453
N. Itoh,
M. Saidoh,
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ISSN:0370-1972
DOI:10.1002/pssb.19700370151
出版商:WILEY‐VCH Verlag
年代:1970
数据来源: WILEY
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| 65. |
Erratum |
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physica status solidi (b),
Volume 37,
Issue 1,
1970,
Page 455-455
G. Kästner,
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ISSN:0370-1972
DOI:10.1002/pssb.19700370152
出版商:WILEY‐VCH Verlag
年代:1970
数据来源: WILEY
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| 66. |
Masthead |
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physica status solidi (b),
Volume 37,
Issue 1,
1970,
Page -
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PDF (33KB)
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ISSN:0370-1972
DOI:10.1002/pssb.19700370101
出版商:WILEY‐VCH Verlag
年代:1970
数据来源: WILEY
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