摘要:

AbstractThe collective excitations of the particle‐density fluctuations are studied in the one‐dimensional Fermi gas by means of the generator coordinate method. The dispersion relation are obtained both, for the forward and backward scattering interaction. It is shown that for repulsive interaction a gap occurs in the frequency of the backscattering excitations at wavevectors equal to twice the Fermi momen

ISSN:0370-1972    

DOI:10.1002/pssb.2221030145

出版商:WILEY‐VCH Verlag    

年代:1981

数据来源: WILEY

摘要:

AbstractThe magnetization, susceptibility, and magnetic specific heat of PrAl2versus temperature are studied within a model where the onset of magnetism is due to the mutual magnetization of rareerth ions and conduction electrons, and the ionic magnetization process is van Vleck‐like. The crystal field, bandwidth, and exchange parameters of the model which fit the available experimental data are 2.5, 7000, and 341 meV, respectivel

ISSN:0370-1972    

DOI:10.1002/pssb.2221030146

出版商:WILEY‐VCH Verlag    

年代:1981

数据来源: WILEY

摘要:

AbstractMicroscopic theory of a complex charge carrier formed by the binding of a free exciton and an excess electron is briefly described. The potential of interaction between the exciton and excess electron is shown to be attractive as a function of the dipole moments induced by the excess electron on the molecule that carries the exciton. The complex charge carrier, like exciton, is shown to move throughout the molecular crystal.

ISSN:0370-1972    

DOI:10.1002/pssb.2221030147

出版商:WILEY‐VCH Verlag    

年代:1981

数据来源: WILEY

摘要:

AbstractThe high magnetic field behaviour of resonance acceptor states in zero‐gap semiconductors produced by short‐range defect potential is studied in the actual structure of an inverted Γ8‐band. Results of numerical calculations for different zero‐field acceptor level energies are presented and optical selection rules for transitions between acceptor states and Γ6and Γ8Landau levels

ISSN:0370-1972    

DOI:10.1002/pssb.2221030148

出版商:WILEY‐VCH Verlag    

年代:1981

数据来源: WILEY

摘要:

AbstractLes mesures de photoémission UPS et XPS effectuées sur Ga1−xAlxSb montrent une modification des spectres de la bande de valence, en fonction dex, reliée directement aux structures de la bande de valence. L'évolution des énergies de liaison de Ga et Sb ne s'interprète pas directement par un transfert de charges, car la différence entre les énergies des niveaux internes de Ga et Sb reste inchangée quel que soitx. Ce résultat qui est en désaccord avec l'augmentation de l'ionicité, semble s'expliquer par une délocalisation de la charge transferr

ISSN:0370-1972    

DOI:10.1002/pssb.2221030149

出版商:WILEY‐VCH Verlag    

年代:1981

数据来源: WILEY

ISSN:0370-1972    

DOI:10.1002/pssb.2221030101

出版商:WILEY‐VCH Verlag    

年代:1981

数据来源: WILEY