ISSN:0370-1972    

DOI:10.1002/pssb.2221940102

出版商:WILEY‐VCH Verlag    

年代:1996

数据来源: WILEY

摘要:

AbstractKarl Böer was a pioneer in research on thin film solar cells, and a committed builder of bridges between academic research and industrial applications. Amongst his many achievements was the founding of the Institute of Energy Conversion at the University of Delaware and a company SES Inc., to exploit the fruits of the research at the IEC. He also built, in the early 1970's, what was probably the world's first building with an integrated PV roof. The paper outlines the paths by which research on solar cells has led to significant advances in commercial products, and seeks to identify some common themes in this successful transfer of technology from R&D laboratories to industry. This is then extended to consider the routes by which R&D in general may be transferred into industry to create new or improved commercial products

ISSN:0370-1972    

DOI:10.1002/pssb.2221940103

出版商:WILEY‐VCH Verlag    

年代:1996

数据来源: WILEY

摘要:

AbstractA review is given on recent progress in solar photovoltaic technology in Japan and its contributions as a clean energy resource for solving the worldwide environmental issue. First, a new concept to reform the energy strategy for future civilization is postulated taking account of the environmental issue. Organizations and objectives of the New Sunshine Project are introduced. Second, some unique advantages of solar photovoltaics are described and compared with conventional electric power generation technologies. Third, key issues to develop photovoltaic technology are revealed, and recent R&D efforts to solve them are demostrated with live technologies in progress. Finally, possible new roles to contribute to the global environment issues by the photovoltaic technology are proposed and discussed.

ISSN:0370-1972    

DOI:10.1002/pssb.2221940104

出版商:WILEY‐VCH Verlag    

年代:1996

数据来源: WILEY

摘要:

AbstractAnalysis of high efficiency, thin film, small grain, polycrystalline, heterojunction CdTe and CuInSe2based solar cells can help explain the high quantum efficiencies and the resulting short circuit current (Jsc) as well as the forward diode current that controls the open circuit voltage (Voc). This analysis shows that minority carrier recombination at the metallurgical interface and at grain boundaries is greatly reduced by the proper “doping” of the window and absorber layers thereby increasing Jsc. Additional analysis and measurements show that the Voc in present state of the art solar cells is controlled by the magnitude of the forward diode current which appears to be caused by recombination in the space charge region of the absorber layer. This also shows that any quantitative modeling of these devices which relates the device performance to the bulk electronic properties of the material should consider the additional geometric dimension introduced by the polycrystallinity because of grain boundary effe

ISSN:0370-1972    

DOI:10.1002/pssb.2221940105

出版商:WILEY‐VCH Verlag    

年代:1996

数据来源: WILEY

摘要:

AbstractTwo examples of recent advances in the field of thin‐film, amorphous hydrogenated silicon (a‐Si:H) pin solar cells are described: the improved understanding and control of the p/i interface, and the improvement of wide‐bandgap a‐Si: H material deposited at low substrate temperature as absorber layer for cells with high stabilized open‐circuit voltage. Stacked a‐Si: H/a‐Si: H cells incorporating these concepts exhibit less than 10% (relative) efficiency degradation and show stabilized efficiencies as high as 9 to 10% (modules 8 to 9%). The use of low‐gap a‐Si:H and its alloys like a‐SiGe:H as bottom cell absorber materials in multi‐bandgap stacked cells offers additional possibilities. The combination of a‐Si: H based top cells with thin‐film crystalline silicon‐based bottom cells appears as a promising new trend. It offers the perspective to pass significantly beyond the present landmark of 10% module efficiency reached by the technology utilizing exclusively amorphous siliconbased absorber layers, while keeping its advantages of pote

ISSN:0370-1972    

DOI:10.1002/pssb.2221940106

出版商:WILEY‐VCH Verlag    

年代:1996

数据来源: WILEY

摘要:

AbstractThe realization of a lateral structured thin solar cell based on silicon is introduced and advantages such as increased internal electric fields, light diffraction into the bulk of the absorber, and improved light trapping are discussed. The key process for the realization of such a solar cell is the interference laser recrystallization of amorphous silicon which has been applied to produce stripe, grid, and dot arrays. The experimental set‐up of the laser recrystallization is presented, and a detailed description of electronic properties of laser recrystallized, boron doped silicon films is give

ISSN:0370-1972    

DOI:10.1002/pssb.2221940107

出版商:WILEY‐VCH Verlag    

年代:1996

数据来源: WILEY

摘要:

AbstractThe analytical potential of refined RBS and AES techniques is demonstrated by two examples: (i) thin FeSi2absorber layers on Si and (ii) TiNiAg multilayer contact structures. Both systems have prospects as components in photovoltaic cell devices. In the case of RBS, the refinement concerns an improved mass resolution achieved by applying projectile ions of higher masses (15N,22Ne) at higher energies (up to 25 MeV). For AES the principal component analysis (PCA) formalism is adopted starting with a peak‐to‐peak height normalization of the relevant Auger peaks in the measured spectra. This evaluation procedure, which takes advantage of the chemical information inherent in the Auger line shape, gives depth profiles of the elements with respect to their chemical bondin

ISSN:0370-1972    

DOI:10.1002/pssb.2221940108

出版商:WILEY‐VCH Verlag    

年代:1996

数据来源: WILEY

摘要:

AbstractNumerical simulations on silicon solar cells with heteroemitter layers made from various wide‐gap semiconductors are described and the dependence of theI–Vcurves on the band offsets is explained. The main advantage utilizing heteroemitters on silicon is the chance for an improved response in the blue region of the solar spectrum which may achieve an increase of the total photocurrent up to 10%. Experimental results on test solar cells with μc‐Si, ZnO, and SIPOS heteroemitters are presented and compared with these predi

ISSN:0370-1972    

DOI:10.1002/pssb.2221940109

出版商:WILEY‐VCH Verlag    

年代:1996

数据来源: WILEY

摘要:

AbstractCarrier recombination, one of the major loss mechanisms in solar cells, has been found to be quite sensitive to the charge character of the Shockley‐Read‐Hall recombination center. Varying either the capture cross sections of the carriers or the density of the recombination centers results in a substantial change of the open‐circuit voltage as well as the fill factor in a solar cell. Compared to a neutral center, the center which remains repulsive to the opposite carrier after capturing a first carrier is beneficial to the open‐circuit voltage, when maintaining a constant density of recombination centers, whereas the center which becomes attractive to the minority carrier is detrimental to the open‐circui

ISSN:0370-1972    

DOI:10.1002/pssb.2221940110

出版商:WILEY‐VCH Verlag    

年代:1996

数据来源: WILEY

摘要:

AbstractStarting with a historical review and a general comparison of growth methods, the paper deals with the seeded vapour growth of substrate‐quality ZnSe crystals. Under optimized growth conditions, in contrast to the growth from the melt, in SPVT and SCVT (seeded physical and chemical vapour transport) twin‐free single crystals are prepared. The dislocation density decreases down to ≈104cm−2in growth direction away from the seed transition region. SPVT‐grown crystals are the better ones with respect to optical properties showing exciton luminescence and decreasing deep level emission. For the application in homoepitaxy, the SCVT‐grown crystals with lowest defect densities seem to

ISSN:0370-1972    

DOI:10.1002/pssb.2221940111

出版商:WILEY‐VCH Verlag    

年代:1996

数据来源: WILEY