| 1. |
Stacking Faults in Tungsten |
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physica status solidi (b),
Volume 22,
Issue 1,
1967,
Page 1-2
J. Bemny,
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ISSN:0370-1972
DOI:10.1002/pssb.19670220139
出版商:WILEY‐VCH Verlag
年代:1967
数据来源: WILEY
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| 2. |
Influence of Heat Treatment on the Spectral Dependence of Photoconductivity in CdSe Crystals |
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physica status solidi (b),
Volume 22,
Issue 1,
1967,
Page 3-5
J. Viščakas,
J. Vaitkus,
S. Stokus,
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PDF (131KB)
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ISSN:0370-1972
DOI:10.1002/pssb.19670220140
出版商:WILEY‐VCH Verlag
年代:1967
数据来源: WILEY
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| 3. |
Elektrolumineszenz von SnO2‐Einkristallen |
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physica status solidi (b),
Volume 22,
Issue 1,
1967,
Page 7-9
K. Jeges,
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PDF (123KB)
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ISSN:0370-1972
DOI:10.1002/pssb.19670220141
出版商:WILEY‐VCH Verlag
年代:1967
数据来源: WILEY
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| 4. |
Emission of Exoelectrons from Metallic Materials |
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physica status solidi (b),
Volume 22,
Issue 1,
1967,
Page 9-30
F. R. Brotzen,
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PDF (1442KB)
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ISSN:0370-1972
DOI:10.1002/pssb.19670220102
出版商:WILEY‐VCH Verlag
年代:1967
数据来源: WILEY
|
| 5. |
Susceptibility of MnO Measured by the NMR Method |
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physica status solidi (b),
Volume 22,
Issue 1,
1967,
Page 11-13
Z. Tompa,
F. Tóth,
G. Grüner,
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PDF (156KB)
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ISSN:0370-1972
DOI:10.1002/pssb.19670220142
出版商:WILEY‐VCH Verlag
年代:1967
数据来源: WILEY
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| 6. |
Chemical Bond and Structure of the Ternary Compound InAsTe |
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physica status solidi (b),
Volume 22,
Issue 1,
1967,
Page 15-17
B. P. Botrubenko,
V. N. Langs,
M. M. Markus,
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PDF (148KB)
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ISSN:0370-1972
DOI:10.1002/pssb.19670220143
出版商:WILEY‐VCH Verlag
年代:1967
数据来源: WILEY
|
| 7. |
X‐Ray Induced F‐Centers in CaF2 |
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physica status solidi (b),
Volume 22,
Issue 1,
1967,
Page 19-22
A. Mukerji,
G. A. Tanton,
J. E. Williams,
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PDF (195KB)
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ISSN:0370-1972
DOI:10.1002/pssb.19670220144
出版商:WILEY‐VCH Verlag
年代:1967
数据来源: WILEY
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| 8. |
On the Shift and Intensity of the Mössbauer Line in Metals |
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physica status solidi (b),
Volume 22,
Issue 1,
1967,
Page 23-26
G. Ya. Selyutin,
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PDF (157KB)
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ISSN:0370-1972
DOI:10.1002/pssb.19670220145
出版商:WILEY‐VCH Verlag
年代:1967
数据来源: WILEY
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| 9. |
Änderung der Eindringkurven bei Diffusionsmessungen durch Verdampfung des Diffusionsmaterials |
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physica status solidi (b),
Volume 22,
Issue 1,
1967,
Page 27-31
P. Reimers,
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PDF (225KB)
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ISSN:0370-1972
DOI:10.1002/pssb.19670220146
出版商:WILEY‐VCH Verlag
年代:1967
数据来源: WILEY
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| 10. |
Transport Phenomena in Semiconducting Thin Films |
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physica status solidi (b),
Volume 22,
Issue 1,
1967,
Page 31-38
B. Tavger,
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PDF (424KB)
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摘要:
AbstractTransport phenomena in thin semiconducting films are studied using the transport equation, the quantization of the transverse motion of the electrons being taken into account. A general formula relating the relaxation time for a thin film to that for the bulk semiconductor is obtained. The mobility is found to increase as the film thickness decreases. Hence the increase of the resistivity with decreasing film thickness does not in general indicate increasing imperfection density. It is found that the Hall constant is only weakly dependent on the film thickness. The transport effects in thin semiconducting films and in bulk semiconductors are compared for several scattering mechanisms.
ISSN:0370-1972
DOI:10.1002/pssb.19670220103
出版商:WILEY‐VCH Verlag
年代:1967
数据来源: WILEY
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