摘要:

AbstractThe effect of a Ti intermediate layer on the properties of TiN coatings has been investigated for stainless steel AISI304 and high speed steel ASP 23 substrates. In this context surface morphology, crystallographic orientation, hardness, and adhesion to the substrate have been studied. A Ti intermediate layer of 0·1 to 0·2μm thickness resulted in optimal adhesion of TiN on ASP 23. Earlier transmission electron microscopy findings on the growth mode of a TiN layer on AISI304 substrate were confirmed.

ISSN:0267-0844    

DOI:10.1179/sur.1989.5.4.305

出版商:Taylor&Francis    

年代:1989

数据来源: Taylor

摘要:

AbstractThe results of durability tests on metallised pin-rolling bearing interference joints are presented. Rolling bearing tests have been applied since the complexity of the stresses in the metallised layer and of the influence of layer parameters on fretting corrosion resistance render theoretical models for durability impractical. After 900 h (518×106cycle) tests no diminution in operating properties was observed, confirming the effectiveness of metalUsed layers in regenerating interference joints. Further confirmation was obtained from static tests.

ISSN:0267-0844    

DOI:10.1179/sur.1989.5.4.311

出版商:Taylor&Francis    

年代:1989

数据来源: Taylor

摘要:

AbstractThe effects of deposition parameters (temperature, total gas jlowrate, N2/H2ratio, TiCl4and HCI concentration) on the deposition rate of TiN were studied in a hot wall reactor. The conditions under which the deposition process is controlled by chemical equilibrium growth, mass transport limited growth, and surface limited growth processes were determined. Mechanisms of TiN chemical vapour deposition (CVD) in the regime of surface control are proposed. When the input partial pressure of hydrogen is 0·666 bar, that of nitrogen<0·291 bar (i.e. N2/H2ratio<0·5), and that of TiCl4 0·145 bar, the rate limiting process is proposed to be the activated adsorption of nitrogen atoms; when N2/H2= 0·5, the apparent activation energy for CVD of TiN was found to be 120·4±24·2 kJ mol-land the reactions on the substrate surface TiCl2(a)+H(a)⇌TiCI*+HCI(a) TiCI*+H(a)→Ti.HCI(a) Ti.HCI(a)+N(a)→TiN(s)+HCI(a) determine the rate of deposition. Equations for the TiN deposition rate under various conditions have been derived. HCI was proved to be a retarder, but loss of TiN by HCI etching was negligible. An equation for TiN deposition rate in the presence of added HCI was also derived. The equations were found to be in agreement with the experimental data.

ISSN:0267-0844    

DOI:10.1179/sur.1989.5.4.315

出版商:Taylor&Francis    

年代:1989

数据来源: Taylor