ISSN:0734-2101    

DOI:10.1116/1.572265

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

摘要:

The fabrication of Au‐base metallic glass spheres and microballoons used for ICF targets is described. Alloys of composition Au55Pb22.5Sb22.5were used because of its low melting point and high Z number. Metallic glass microspheres have a high degree of sphericity and surface smoothness and deform homogeneously and isotropically under the high strain rates involved in an ICF implosion. (AIP)

ISSN:0734-2101    

DOI:10.1116/1.572266

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

ISSN:0734-2101    

DOI:10.1116/1.572267

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

ISSN:0734-2101    

DOI:10.1116/1.572269

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

ISSN:0734-2101    

DOI:10.1116/1.572271

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

ISSN:0734-2101    

DOI:10.1116/1.572272

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

摘要:

We have carried out a systematic study of mercury cadmium telluride (MCT), bulk single crystal and epilayers, using electrolyte electroreflectance (EER). Our results, and others discussed here, suggest that much of the unusual properties of this material are due to structural microdomains. Under mechanical stresses or chemical attack, the walls of these domains tend to move via the generation and propagation of defects associated with cationic diffusion. A typical consequence is the creation ofn‐type zones within ap‐type matrix. We have calibrated our etch rate so as to be able to apply EER to the study of the profiles of epilayers with a depth resolution of 200 Å. The technique was applied to more than 100 samples of all origins. The results are summarized here in qualitative terms, such as typical profile features, as well as in quantitative terms, such as compositional variations and defect densities. EER results are integrated within the conceptual framework introduced above and compared to SIMS and microprobe results.

ISSN:0734-2101    

DOI:10.1116/1.572273

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

摘要:

We present here a general survey of our activity since 1981. We show thatn‐ orp‐type CdxHg1−xTe with low carrier concentration, high mobility and crystal perfection limited by the substrate itself can be grown by molecular beam epitaxy (MBE) between 180 and 210 °C onto CdTe(111) and (100) orientation. We report for the first time the characteristics of a photovoltaic device processed on ap‐type CdxHg1−xTe MBE layer which proves that this material can be grown by MBE with a detection device specification. We also give some information concerning 100 periods of 224 Å CdTe–HgTe superlattice previously reported.

ISSN:0734-2101    

DOI:10.1116/1.572274

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

摘要:

A systematic study of CdTe film growth by molecular beam epitaxy (MBE) on hydroplaned (111)A and (111)B CdTe substrates is discussed. Substrate preparation prior to growth involved chemical etching techniques, rather than sputtering in UHV, in order to maintain the integrity of the hydroplaned surface. A range of substrate temperature during growth was investigated. X‐ray diffraction, UV reflection, and transmission electron diffraction measurements were employed to evaluate the structural quality of the CdTe films. Bright and dark field transmission electron microscopy was used to determine film dislocation densities. An entirely different film growth morphology was observed on the (111)A versus (111)B substrate surfaces for the range of temperatures and growth rate employed. Growth of high quality, low dislocation density, twin‐free CdTe films was achieved on hydroplaned (111)A CdTe substrates at 250 °C.

ISSN:0734-2101    

DOI:10.1116/1.572275

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

摘要:

Laser assisted deposition (LADA) has been used to deposit epitaxial Hg0.7Cd0.3Te layers on CdTe substrates and CdTe layers on GaAs substrates. As‐ grown Hg0.7Cd0.3Te layers aren‐type and can be converted top‐type by annealing. Implantedn+/pphotodiodes have been demonstrated. Heteroepitaxial (111)CdTe/(100) GaAs layers were characterized by x‐ray diffraction, UV reflectance, photoluminescence, and transmission electron microscopy (TEM). Results indicate good crystallinity with 105cm−2dislocation densities beyond a few microns from the CdTe/GaAs interface.

ISSN:0734-2101    

DOI:10.1116/1.572276

出版商:American Vacuum Society    

年代:1983

数据来源: AIP