摘要:

An approximate analysis of a two‐dimensional unsteady flow of chemically reacting gases is presented under the following conditions: (1) Constant suction at the plate, (2) the plate temperature is oscillating about a non‐zero constant mean, (3) the uniform free‐stream velocity, (4) presence of foreign mass with negligible Soret‐Dufour effects, (5) first‐order chemical reaction, and (6) small amplitude. Solutions to the mean velocity, the mean temperature, the transient velocity, the transient temperature, the amplitude and phase of the skin‐friction and the rate of heat transfer are derived. It is observed that due to the presence of a chemical reaction, the mean skin‐friction decreases but the mean rate of heat transfer increases.

ISSN:0253-3839    

DOI:10.1080/02533839.1989.9677203

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

摘要:

Like electrical circuit components, the vascular beds in organs present impedance to waves in systemic circulation. In this study, the authors design an animal experiment to study the effect of the impedance to the pressure waves. We view the systemic circulation as an electrical circuit network, and interpret the vascular beds in organs as lumped components in the electrical circuit. Nature's designing of the systemic circulation minimizes the pressure wave reflection, and maximizes blood distribution. This is very similar to the concept adopted by electrical engineers in designing electrical circuits.

ISSN:0253-3839    

DOI:10.1080/02533839.1989.9677204

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

摘要:

For GaAs grown by molecular beam epitaxy (MBE), predeposition of a sufficient amount of Sn on the substrate surface, which tends to segregate to the film surface during growth, can uniformly dope the subsequently grown overlayer. For example, GaAs grown on a substrate predeposited with ∼one monolayer of Sn, results in uniformlyn‐type doped overlayer with ∼200 nm thickness. Similar segregation effects also have been observed in GaAs doped withn‐type dopant Te andp‐type dopants, Mn, Fe and Cr. Based on this so‐called “predeposition doping” method, a laterally‐selectively doped GaAs layer can be grown on a surface which is repeatedly prepared by depositing each kind of the aforementioned dopant on an InAs passivated surface, followed by the selective etching to define its covered region, followed by the removal of InAs by thermal desorption. The latter requires the dopants to have low vapor pressures at the InAs desorption temperature. Finally, a GaAs layer with a lateralp‐njunction exhibiting excellent diode characteristics was grown to demonstrate this laterally‐selective doping MBE technique.

ISSN:0253-3839    

DOI:10.1080/02533839.1989.9677205

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

ISSN:0253-3839    

DOI:10.1080/02533839.1989.9677206

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

ISSN:0253-3839    

DOI:10.1080/02533839.1989.9677207

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

ISSN:0253-3839    

DOI:10.1080/02533839.1989.9677192

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor