摘要:

A theoretical analysis is presented to describe the rate data in terms of fundamental reaction steps involved in the overall methanation kinetics. A model involving reaction inhibition (by adsorbed CO) was used in combination with the physical properties of the catalysts to determine the ranges of temperature and partial pressure of CO where pore diffusion significantly influences the observed methanation rate.

ISSN:0253-3839    

DOI:10.1080/02533839.1985.9676833

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

ISSN:0253-3839    

DOI:10.1080/02533839.1985.9676834

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

摘要:

Channeled substrate buried (CSB) heterostructure laser diodes have been developed successfully. To fabricate CSB lasers a two‐step liquid‐phase epitaxial (LPE) growth in conjunction with the standard etching techniques was required. The first step of the LPE process was to grow ap‐type GaAs internal current confining layer on then‐GaAs substrate, followed by the etching of parallel V‐grooves along the [011] direction. The second LPE process was to grow a four‐layer laser structure over the V‐grooves. Due to the smoothing effect, an active layer with a crescent‐shaped cross section was formed. Because of the undercutting effect during the etching process, the active layer became very wide, i. e.,∼25μm. This resulted in a far‐field pattern along the junction plane with multifilaments. Each filament had a full angle at half maximun of 8∼10°. The smallest threshold current was found to be 0.88 A, which corresponds to a threshold current density of 8 KA/cm2. Its mode profile was in the range of 8,360 Å to 8,400 Å.

ISSN:0253-3839    

DOI:10.1080/02533839.1985.9676835

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

ISSN:0253-3839    

DOI:10.1080/02533839.1985.9676836

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

ISSN:0253-3839    

DOI:10.1080/02533839.1985.9676822

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor