摘要:

The potential and current density distribution in a short-channel MOS transistor in saturation has been studied in detail by numerical simulation. The pushing effect of carriers from the surface in the draincontrolled region is discussed by introducing a field depth parameter. The pinch-off condition of the channel is examined: at gate voltages below a transition voltageVtr, the length of the pinch-off region is determined by the pushing of carriers away from the surface; whereas at higher gate voltages, it is determined by the velocity saturation of carriers. An analytical formula for the length of the pinch-off region at gate voltages belowVtris derived based on simulation results.

DOI:10.1049/ip-i-1.1985.0037

出版商:IEE    

年代:1985

数据来源: IET

摘要:

The effects of ion-implanted layers together with deposited surface films on resurfed LDMOS transistors is studied. The specific on-resistance of lateral DMOS transistors is calculated and compared for two types of device, the ‘resurfed’ structure and a surface implanted SIPOS covered structure. Device parameters are first chosen so as to give 600 V breakdown for each type. It is shown that an LDMOS device with a surface implanted layer and SIPOS overlay gives superior performance with respect both to on resistance and insensitivity of the breakdown voltage to fluctuations in substrate doping density.

DOI:10.1049/ip-i-1.1985.0038

出版商:IEE    

年代:1985

数据来源: IET

摘要:

Theory is presented, based on the lack of crystal orientation dependence of the oxidation rate, for the anodisation of silicon in an oxygen plasma. It is demonstrated that the diffusion of oxygen is unlikely to control the process rate in either the linear or parabolic regions of growth. The drift of ions and electrons is controlled by the need for a constant field at the silicon surface and the build up of ionic space charge in the oxide continues at the expense of that within a boundary layer throughout the constant rate regime. As this boundary layer becomes depleted, a parabolic region of growth is predicted. This theory is found to be consistent with growth occurring in a microwave-stimulated plasma of oxygen.

DOI:10.1049/ip-i-1.1985.0039

出版商:IEE    

年代:1985

数据来源: IET

摘要:

The influence of an ionising irradiation on the channel mobility of a MOS transistor is experimentally investigated as a function of both the oxide layer thickness and the electric field in the insulating layer during irradiation. The previously proposed empirical formula for the dependency of the low field mobility on the created charge is made more precise.

DOI:10.1049/ip-i-1.1985.0040

出版商:IEE    

年代:1985

数据来源: IET

摘要:

Simple CAD models are proposed for the short-channel enhancement-mode MOSFET. The conventional use of drain bias modulation of channel length to describe saturation characteristics has been discarded and replaced by drain bias enhancement of channel charge forp-channel transistors and of channel velocity forn-channel transistors. The models possess continuity of current, transconductance and output conductance throughout the subthreshold, triode and saturation ranges of operation. They have been tested against experimental transistors and against two-dimensional numerically-simulated transistors and have given satisfactory results in all cases. The models are based on good physics, are easy to understand, are straightforward to use and are computationally efficient. They have a modular structure and it is possible, therefore, to select any appropriate degree of simplicity or detail.

DOI:10.1049/ip-i-1.1985.0041

出版商:IEE    

年代:1985

数据来源: IET

DOI:10.1049/ip-i-1.1985.0043

出版商:IEE    

年代:1985

数据来源: IET

DOI:10.1049/ip-i-1.1985.0044

出版商:IEE    

年代:1985

数据来源: IET