摘要:

A novel integrated A-type voltage-controlled negative-differential-resistance device consisting of a bipolar-junction transistor merged with a metal-oxide-semiconductor field-effect transistor, which has been called the lambda bipolar transistor (LBT), is studied in detail both experimentally and theoretically. By considering the effects of the current gain degradation, the DC model of the device is constructed, and the important device parameters such as the peak point, the negative resistance, and the valley point, are characterised. Experimental results for the fabricated devices are shown to be in general agreement with theoretical calculations. Based on the DC model and the small signal behaviour of the LBT, the optimal device design considerations for micropower LBT ICs are clearly presented. Moreover, the temperature stability of the LBT is also investigated.

DOI:10.1049/ip-i-1.1981.0024

出版商:IEE    

年代:1981

数据来源: IET

摘要:

The MOST transconductance multiplier is a useful device for vector-product computation in integrated form. The theory and practice of this multiplier are developed here, and its use is exemplified in monolithic programmable filters containing 256-point arrays. Multiplication accuracies of 1% and bandwidths of 1 MHz are shown to be feasible, and projections are made of the ultimate capabilities of the technique.

DOI:10.1049/ip-i-1.1981.0025

出版商:IEE    

年代:1981

数据来源: IET

摘要:

The paper describes a technology for simultaneously realising both power VVMOSTs and small signal planar NMOS devices, that together can form a power MOS IC. Device and circuit constraints are discussed and experimental results from a test IC are presented. A fully developed process, based on such a concept, could find application in such circuits as switching regulators and amplifiers.

DOI:10.1049/ip-i-1.1981.0026

出版商:IEE    

年代:1981

数据来源: IET

摘要:

A simple equivalent circuit is employed to model the optically induced switching conditions of the MIST, thereby permitting the delay time, rise time and fall time to be calculated. The model also enables easy examination of the dependence of the MIST's transient behaviour to both optical power overdrive and device capacitance and resistance. Experimental verification of the theory is undertaken.

DOI:10.1049/ip-i-1.1981.0027

出版商:IEE    

年代:1981

数据来源: IET

摘要:

The problem of measuring very steep doping profiles, of the type usually present in ion-implanted GaAs FETs, is critically examined in the light of numerical solutions of the Poisson equation for some typical layers. It is found that the most popular techniques (C/V and saturation-current measurements) may be quite misleading or, at least, appreciable corrections are typically required.

DOI:10.1049/ip-i-1.1981.0028

出版商:IEE    

年代:1981

数据来源: IET

摘要:

A new circuit model of a stripe-geometry double-heterojunction injection laser below threshold is presented. The model is derived from the physics of the semiconductor heterojunction, and takes into account the effects of active-layer carrier degeneracy, high-level injection, and nonradiative recombination along the stripe edge. Turn-on delay characteristics and small-signal input resistance characteristics of a laser are computed using the circuit model. Results of these analyses are compared with previous theoretical results and published experimental data.

DOI:10.1049/ip-i-1.1981.0029

出版商:IEE    

年代:1981

数据来源: IET